SiC-based 1D Nanostructures
Keyword(s):
ABSTRACTThanks to an original approach based on the carburization of silicon nanowires, silicon carbide-based one dimensional nanostructures – SiC nanotubes, Si-SiC core-shell nanowires and SiC nanowires – have been synthesized. The original process, which relies on controlling the out-diffusion of Si atoms through SiC, can be monitored by the temperature, the pressure and the time of carburization. These SiC-based 1D nanostructures have been characterized by SEM, FIB-SEM and TEM microscopies and also Raman spectroscopy. Bio-nano-sensors, nano-Field-Effect-Transistors (nano-FETs) or gas sensors may be some applications for these nanostructures.
2012 ◽
Vol 116
(12)
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pp. 7118-7125
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2006 ◽
Vol 110
(32)
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pp. 15763-15768
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2005 ◽
Vol 109
(1)
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pp. 86-90
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Keyword(s):
2015 ◽
Vol 19
(6)
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pp. 484-497
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2010 ◽
Vol 4
(1)
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pp. 20-31
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