Synthesis and Characterization of Yttrium Titanate and Er doped Yttrium Titanate Nanofibers

2013 ◽  
Vol 1552 ◽  
pp. 71-76
Author(s):  
Kanchan Mondal ◽  
Kaleb Hartman ◽  
George Trifon ◽  
Debalina Dasgupta ◽  
Matthew Bolin ◽  
...  
Keyword(s):  
Single Phase ◽  
Ionic Conduction ◽  
Building Blocks ◽  
Fiber Amplifiers ◽  
Hydrogen Storage Material ◽  
Integrated Optical ◽  
Integrated Optical Devices ◽  
Er Doped ◽  
Selective Emitters

ABSTRACTYttrium titanate belongs to a family of compounds called pyrochlores with significant properties such as ionic conduction, optical non-linearity and radiation tolerance that have resulted in applications thermal barrier coatings, high-permittivity dielectrics, and materials for safe disposal of actinide-containing nuclear waste, and hydrogen storage material. The application of these materials in ODS ferritic steels, photocatalytic water splitting and a more efficient host material than TiO2 for Er3+ luminescence have been evaluated. ErxY2-xTi2O7 has tremendous applications in fiber amplifiers, integrated optical devices and selective emitters for thermophotovoltaic applications. Since 1-D nanostructures are deemed to be important building blocks for future optical and optoelectronic nanodevices, we have used electrospinning methods to synthesize nanofibers and freestanding, non-woven nanofibers membranes of single phase yttrium titanate and ErxY2-xTi2O7 (Er/(Ti+Er) at. ratio= 0 -15 %) with diameters less than 150 nm and have characterized the physical, thermal and optical properties of these nanofibers.

Optimization and characterization of the guest-host polyetherketone polymer films for application in integrated optical devices

2002 ◽  
Vol 35 (12) ◽  
pp. 1404-1407 ◽  
Author(s):  
Wei Shi ◽  
Changshui Fang ◽  
Qiwei Pan ◽  
Zhihui Qin ◽  
Qintian GU ◽  
...  
Keyword(s):  
Polymer Films ◽  
Optical Devices ◽  
Integrated Optical ◽  
Integrated Optical Devices

Er-doped integrated optical devices in LiNbO/sub 3/

1996 ◽  
Vol 2 (2) ◽  
pp. 355-366 ◽  
Author(s):  
I. Baumann ◽  
S. Bosso ◽  
R. Brinkmann ◽  
R. Corsini ◽  
M. Dinand ◽  
...  
Keyword(s):  
Optical Devices ◽  
Integrated Optical ◽  
Integrated Optical Devices ◽  
Er Doped

scholarly journals Isotope Analytical Characterization of Carbon-Based Nanocomposites

Radiocarbon ◽  
2018 ◽  
Vol 60 (4) ◽  
pp. 1101-1114
Author(s):  
Tibor Szabó ◽  
Róbert Janovics ◽  
Marianna Túri ◽  
István Futó ◽  
István Papp ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Potential ◽  
Chemical Vapor ◽  
Physico Chemical ◽  
Integrated Optical ◽  
Integrated Optical Devices ◽  
Carbon Based Nanomaterials ◽  
Conceptual Revolution ◽  
Carbon Based

ABSTRACTCarbon-based nanomaterials of different dimensions (1–3D, tubes, bundles, films, papers and sponges, graphene sheets) have been created and their characteristic properties have been discussed intensively in the literature. Due to their unique advantageous, tunable properties these materials became promising candidates in new generations of applications in many research laboratories and, recently, in industries as well. Protein-based bio-nanocomposites are referred to as materials of the future, which may serve as conceptual revolution in the development of integrated optical devices, e.g. optical switches, microimaging systems, sensors, telecommunication technologies or energy harvesting and biosensor applications. In our experiments, we designed various carbon-based nanomaterials either doped or not doped with nitrogen or sulfur during catalytic chemical vapor deposition synthesis. Radio- and isotope analytical studies have shown that the used starting materials, precursors and carriers have a strong influence on the geometry and physico-/chemical characteristics of the carbon nanotubes produced. After determining the 14C isotope constitution 53 m/m% balance was found in the reaction center protein/carbon nanotubes complex in a sensitive way that was prepared in our laboratory. The result is essential in determining the yield of conversion of light energy to chemical potential in this bio-hybrid system.

Silicon-induced disordering in GaAs-AlAs superlattices

1990 ◽  
Vol 48 (4) ◽  
pp. 688-689
Author(s):  
N. Baba-Ali ◽  
I. Harrison ◽  
B. Tuck ◽  
H.P. Ho
Keyword(s):  
Impurity Diffusion ◽  
Dislocation Loops ◽  
Quantum Well Structures ◽  
Self Diffusion ◽  
Preferential Diffusion ◽  
Integrated Optical ◽  
Integrated Optical Devices ◽  
Contrast Analysis ◽  
Si Doped

Compositional disordering of quantum well structures by impurity diffusion has attracted increasing interest since it was first discovered by Laidig et al in 1981. This phenomenon not only provides a simple way of fabricating new integrated optical devices but also enables fundamental studies of impurity diffusion and self-diffusion. Silicon has been found to induce intermixing in AlGaAs based multiquantum wells. Various techniques have been used to incorporate Si, these are diffusion from the surface, implantation followed by annealing and diffusion from a grown-in source.In the present work, diffusion in Molecular Beam Epitaxy (MBE) grown samples has been carried out from a grown-in source. The TEM characterization of the as-received specimen has revealed that the structure consisted in a 0.4 um thick Si-doped Al0.33Ga0.66As layer which was sandwiched between two superlattice areas each of which consisted of 17 periods of alternating GaAs(400A)-AlAs(200A) layers (Figure 1) .The samples were annealed in sealed Silica ampoules under various Arsenic pressures at 815°C and 915°C. Secondary Ion Mass Spectroscopy (Figures 4 and 5) demonstrates that the change in the Ga and Al profiles is the consequence of Si diffusion through the Superlattice layers. The TEM investigation of the samples (Figures 2 and 3) confirmed that intermixing had been induced during the diffusion. It also revealed the formation of intrinsic dislocation loops in the annealed specimens. The contrast analysis of the loops indicates that these are of the interstitial type. Finally,increasing the Arsenic overpressure has been found to cause preferential diffusion of Si towards the surface (Figures 6,7 and 8).

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