In-situ preparation of metal oxide thin films by inkjet printing acetates solutions

2013 ◽  
Vol 1547 ◽  
pp. 13-20 ◽  
Author(s):  
Mei Fang ◽  
Wolfgang Voit ◽  
Yan Wu ◽  
Lyubov Belova ◽  
K.V. Rao

ABSTRACTDirect printing of functional oxide thin films could provide a new route to low-cost, efficient and scalable fabrications of electronic devices. One challenge that remains open is to design the inks with long term stability for effective deposition of specific oxide materials of industrial importance. In this paper, we introduce a reliable method of producing stable inks for ‘in-situ’ deposition of oxide thin films by inkjet printing. The inks were prepared from metal-acetates solutions and printed on a variety of substrates. The acetate precursors were decomposed into oxide films during the subsequent calcination process to achieve the ‘in-situ’ deposition of the desired oxide films directly on the substrate. By this procedure we have obtained room temperature contamination free ferromagnetic spintronic materials like Fe doped MgO and ZnO films from their acetate(s) solutions. We find that the origin of magnetism in ZnO, MgO and their Fe-doped films to be intrinsic. For a 28 nm thick film of Fe-doped ZnO we observe an enhanced magnetic moment of 16.0 emu/cm3 while it is 5.5 emu/cm3 for the doped MgO film of single pass printed. The origin of magnetism is attributed to cat-ion vacancies. We have also fabricated highly transparent indium tin oxide films with a transparency >95% both in the visible and IR range which is rather unique compared to films grown by any other technique. The films have a nano-porous structure, an added bonus from inkjetting that makes such films advantageous for a broad range of applications.

RSC Advances ◽  
2013 ◽  
Vol 3 (42) ◽  
pp. 19501 ◽  
Author(s):  
Mei Fang ◽  
Andrey Aristov ◽  
K. V. Rao ◽  
Andrei V. Kabashin ◽  
Lyubov Belova

1989 ◽  
Vol 169 ◽  
Author(s):  
R. Singh ◽  
S. Sinha ◽  
J. Narayan

AbstractMetalorganic chemical vapor deposition (MOCVD) has the potential of emerging as a major technique for the fabrication of high temperature superconductor devices. In this paper, we present preliminary results of in-situ deposition of Y-Ba-Cu-0 thin films (Tc = 79K) by rapid isothermal processing assisted MOCVD on BaF2/silicon substrates.


2011 ◽  
Vol 109 (10) ◽  
pp. 103530 ◽  
Author(s):  
Cheng Peng ◽  
Zheng Jia ◽  
Dan Bianculli ◽  
Teng Li ◽  
Jun Lou

2021 ◽  
pp. 138731
Author(s):  
Bert Scheffel ◽  
Olaf Zywitzki ◽  
Thomas Preußner ◽  
Torsten Kopte

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Jose Recatala-Gomez ◽  
Pawan Kumar ◽  
Ady Suwardi ◽  
Anas Abutaha ◽  
Iris Nandhakumar ◽  
...  

Abstract The best known thermoelectric material for near room temperature heat-to-electricity conversion is bismuth telluride. Amongst the possible fabrication techniques, electrodeposition has attracted attention due to its simplicity and low cost. However, the measurement of the thermoelectric properties of electrodeposited films is challenging because of the conducting seed layer underneath the film. Here, we develop a method to directly measure the thermoelectric properties of electrodeposited bismuth telluride thin films, grown on indium tin oxide. Using this technique, the temperature dependent thermoelectric properties (Seebeck coefficient and electrical conductivity) of electrodeposited thin films have been measured down to 100 K. A parallel resistor model is employed to discern the signal of the film from the signal of the seed layer and the data are carefully analysed and contextualized with literature. Our analysis demonstrates that the thermoelectric properties of electrodeposited films can be accurately evaluated without inflicting any damage to the films.


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