Amorphous Silicon Thin Film Transistor Biosensing System

2013 ◽  
Vol 1530 ◽  
Author(s):  
Hanbin Ma ◽  
Ben Miller ◽  
Sungsik Lee ◽  
Arman Ahnood ◽  
Marius Bauza ◽  
...  

ABSTRACTElectronic systems are a very good platform for sensing biological signals for fast point-of-care diagnostics or threat detection. One of the solutions is the lab-on-a-chip integrated circuit (IC), which is low cost and high reliability, offering the possibility for label-free detection. In recent years, similar integrated biosensors based on the conventional complementary metal oxide semiconductor (CMOS) technology have been reported. However, post-fabrication processes are essential for all classes of CMOS biochips, requiring biocompatible electrode deposition and circuit encapsulation.In this work, we present an amorphous silicon (a-Si) thin film transistor (TFT) array based sensing approach, which greatly simplifies the fabrication procedures and even decreases the cost of the biosensor. The device contains several identical sensor pixels with amplifiers to boost the sensitivity. Ring oscillator and logic circuits are also integrated to achieve different measurement methodologies, including electro-analytical methods such as amperometric and cyclic voltammetric modes. The system also supports different operational modes. For example, depending on the required detection arrangement, a sample droplet could be placed on the sensing pads or the device could be immersed into the sample solution for real time in-situ measurement. The entire system is designed and fabricated using a low temperature TFT process that is compatible to plastic substrates. No additional processing is required prior to biological measurement. A Cr/Au double layer is used for the biological-electronic interface. The success of the TFT-based system used in this work will open new avenues for flexible label-free or low-cost disposable biosensors.

1993 ◽  
Vol 297 ◽  
Author(s):  
Byung Chul Ahn ◽  
Jeong Hyun Kim ◽  
Dong Gil Kim ◽  
Byeong Yeon Moon ◽  
Kwang Nam Kim ◽  
...  

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.


1987 ◽  
Vol 95 ◽  
Author(s):  
R. L. Weisfield ◽  
H. C. Tuan ◽  
L. Fennell ◽  
M. J. Thompson

AbstractAmorphous silicon (a-Si:H) thin-film transistor (TFT) array technology has been developed for new applications in low-cost, high-quality electronic printing. We have fabricated page-wide arrays of low-voltage pass transistors using a-Si:H TFTs for ionographic printing, in which voltages of 0 to 15 volts applied to a line of output electrodes modulate the flow of ions charging a dielectric receptor. High-voltage a-Si:H TFTs have been used in an electrographic printer to modulate high voltages required to initiate air discharges. Combining a-Si:H photodiodes on TFT arrays, we have also designed circuits for document scanning and photosensor amplifiers. TFT performance in relation to these novel printer and sensor applications will be discussed. Issues related to process integration, circuit design, and large-area fabrication technology will be addressed.


2000 ◽  
Author(s):  
Pi-Fu Chen ◽  
Jr-Hong Chen ◽  
Dou-I Chen ◽  
HsixgJu Sung ◽  
June-Wei Hwang ◽  
...  

2009 ◽  
Vol 30 (1) ◽  
pp. 36-38 ◽  
Author(s):  
J. H. Oh ◽  
D. H. Kang ◽  
W. H. Park ◽  
J. Jang ◽  
Y. J. Chang ◽  
...  

2007 ◽  
Vol 124-126 ◽  
pp. 259-262
Author(s):  
Jae Hong Jeon ◽  
Kang Woong Lee

We investigated the effect of amorphous silicon pattern design regarding to light induced leakage current in amorphous silicon thin film transistor. In addition to conventional design, where amorphous silicon layer is protruding outside the gate electrode, we designed and fabricated amorphous silicon thin film transistors in another two types of bottom gated structure. The one is that the amorphous silicon layer is located completely inside the gate electrode and the other is that the amorphous silicon layer is protruding outside the gate electrode but covered completely by the source and drain electrode. Measurement of the light induced leakage current caused by backlight revealed that the design where the amorphous silicon is located inside the gate electrode was the most effective however the last design was also effective in reducing the leakage current about one order lower than that of the conventional design.


2006 ◽  
Vol 352 (9-20) ◽  
pp. 1704-1707 ◽  
Author(s):  
Byoung-Kwon Choo ◽  
Jung-Su Choi ◽  
Se-Whan Kim ◽  
Kyu-Chang Park ◽  
Jin Jang

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