Reduction of thermal conductivity in semiconducting composite films consisting of silicon and transition-metal silicide nanocrystals

2013 ◽  
Vol 1456 ◽  
Author(s):  
N. Uchida ◽  
Y. Ohishi ◽  
K. Kurosaki ◽  
S. Yamanaka ◽  
T. Tada ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Room Temperature ◽  
High Efficiency ◽  
Phonon Scattering ◽  
Composite Films ◽  
Metal Silicide ◽  
Transmission Electron ◽  
Microscope Images ◽  
Scattering Spectra ◽  
Raman Scattering Spectra

ABSTRACTWe observed significant reduction of thermal conductivity in semiconducting composite films of Si and molybdenum (Mo)-silicide nanocrystals (NCs). These films were synthesized by phase separation due to annealing at 700 -1000°C from sputtered amorphous Mo–Si alloy. Transmission electron microscope images showed that the NCs were grown to diameters of∼10 nm in the films by annealing at 800°C. Raman scattering spectra showed lower shift of peak positions of Si transverse optical (TO) phonon due to the confinement effect and the tensile stress. The electrical resistivity of the films was 0.17- 9 Ωm at room temperature and showed a semiconducting temperature dependence at 20-400 K. Thermal conductivity of the film was reduced to 4.4 W/mK by enhancement of phonon scattering at NC interfaces, suggesting that the composite film is promising as a high-efficiency Si-based thermoelectric material.

Glass-Oxide Nanocomposites as Effective Thermal Insulation Materials

2013 ◽  
Vol 1558 ◽  
Author(s):  
Qing Hao ◽  
Minqing Li ◽  
Garrett Joseph Coleman ◽  
Qiang Li ◽  
Pierre Lucas
Keyword(s):  
Thermal Conductivity ◽  
Thermal Insulation ◽  
Room Temperature ◽  
Phonon Scattering ◽  
Material Composition ◽  
Insulation Materials ◽  
Atomic Structures ◽  
Porous Nanocomposites ◽  
Theoretical Minimum

ABSTRACTWith extremely disordered atomic structures, a glass possesses a thermal conductivity k that approaches the theoretical minimum of its composition, known as the Einstein’s limit.1 Depending on the material composition and the extent of disorder, the thermal conductivity of some glasses can be down to 0.1-0.3 W/m∙K at room temperature,2,3 representing some of the lowest k values among existing solids. Such a low k can be further reduced by the interfacial phonon scattering within a nanocomposite that can be used for thermal insulation applications. In this work, nanocomposites hot pressed from the mixture of glass nanopowder (GeSe4 or Ge20Te70Se10) and commercial SiO2 nanoparticles, or pure glass nanopowder, are investigated for the potential k reduction. It is found that adding SiO2 nanoparticles will instead increase k if the measured k values for usually porous nanocomposites are converted into those for the corresponding solid (kSolid) with Eucken’s formula. In contrast, pure glass nano-samples always show kSolid data significantly reduced from that for the starting glass. For a pure GeSe4 nano-sample, kSolid would beat the Einstein’s limit for its composition.

A New Method for Preparing Ge Nano-Crystallites Embedded in SiNY Matrices

1994 ◽  
Vol 358 ◽  
Author(s):  
Kunji Chen ◽  
Xuexuan Qu ◽  
Xinfan Huang ◽  
Zhifeng Li ◽  
Duan Feng
Keyword(s):  
Laser Annealing ◽  
Hydrogen Plasma ◽  
New Method ◽  
Transmission Electron ◽  
Scattering Spectra ◽  
Ion Laser ◽  
New Type ◽  
Raman Scattering Spectra ◽  
Average Size ◽  
20 Nm

ABSTRACTWe report a new method for synthesizing Ge nano-crystallites embedded in SiNy film matrices. On the basis of the effect of the reactant precursors and preferential chemical bonding of Si-N and Ge-Ge, thin films with Ge clusters embedded in SiNy matrices have been prepared in the PECVD system with reactant gases of SiH4, GeH4 and NH3 mixed in the hydrogen plasma. The as-deposited films were then crystallized by Ar ion laser annealing or thermal annealing technique to form nanometer-sized Ge crystallites.The composition and microstructures of these new type of sample were characterized by infrared absorption spectra, transmission electron microscopy, X-ray diffraction and Raman scattering spectra. The results indicated that the average size of Ge crystallites was estimated to be 2-20 nm depending on the deposition and annealing parameters and can be controlled by a designed manner.

Phonon Conduction Normal to Polysilicon Films on Diamond

2013 ◽  
Author(s):  
Jungwan Cho ◽  
Pane C. Chao ◽  
Mehdi Asheghi ◽  
Kenneth E. Goodson
Keyword(s):  
Thermal Conductivity ◽  
Transport Theory ◽  
Phonon Scattering ◽  
Phonon Transport ◽  
Silicon Films ◽  
Silicon Thin Films ◽  
Transmission Electron ◽  
Crystal Films ◽  
Polysilicon Films ◽  
Polycrystalline Silicon Films

Silicon films of thickness near and below one micrometer play a central role in many advanced technologies for computation and energy conversion. Numerous data on the thermal conductivity of silicon thin films are available in the literature, but mainly for the in-plane thermal conductivity of polycrystalline and single-crystal films. Here we use picosecond time-domain thermoreflectance (TDTR), transmission electron microscopy, and phonon transport theory to investigate heat conduction normal to polycrystalline silicon films on diamond substrates. The data agree with predictions that account for the coupled effects of phonon scattering on film boundaries and defects concentrated near grain boundaries. Using the data and the model, we estimate the polysilicon-diamond interface resistance to be 6.5–8 m2 K GW−1.

Phonons and Thermal Conductivity in Skutterudite Thermoelectrics

2003 ◽  
Vol 793 ◽  
Author(s):  
C. A. Kendziora ◽  
G. S. Nolas
Keyword(s):  
Thermal Conductivity ◽  
Thermal Conduction ◽  
Screening Tool ◽  
Crucial Step ◽  
Theoretical Predictions ◽  
Filled Skutterudites ◽  
Scattering Spectra ◽  
Polarized Raman ◽  
Raman Scattering Spectra ◽  
Conduction Properties

ABSTRACTWe study Raman phonon vibrations and relate them to thermal conductivity for empty and filled skutterudites designed for thermoelectric applications, where low thermal conduction is critical. Polarized Raman scattering spectra of crystallite and polycrystalline samples are compared with theoretical predictions and analyzed in comparison to the thermal conduction properties. Our emphasis is on the CoSb3 skutterudite and its filled derivatives, including materials with Ge, Sn, and La in the cages. We observe a strong correlation between aspects of the Raman spectrum and low thermal conductivity. This presents Raman spectroscopy as a characteristic screening tool for potential thermoelectrics and is a crucial step toward predicting lattice thermal conductivities.

Platelets, dislocation loops and voidites in diamond

1986 ◽  
Vol 407 (1833) ◽  
pp. 239-258 ◽  
Keyword(s):  
Room Temperature ◽  
Solid Phase ◽  
Prismatic Slip ◽  
Dislocation Loops ◽  
High Pressure And Temperature ◽  
Burgers Vector ◽  
Transmission Electron ◽  
Microscope Images ◽  
Diffraction Patterns ◽  
Small Clusters

A type IaB diamond specimen containing partially decomposed platelets, dislocation loops and voidites has been investigated by transmission electron microscopy. The dislocation loops were found to be prismatic and interstitial in nature, some with Burgers vector ½ a <110> previously reported, but most with Burgers vector a <001>. Burgers vector analysis of the bounding dislocation of partially decomposed platelets shows that the a <001> loops are formed by transformation of the platelets, by nucleation and climb of a <00(1— f )> dislocation, combining with the a <00 f > dislocation bounding the platelet. The climb mechanism is driven by the need to generate vacancies for the decomposition of the platelets and to accommodate the nitrogen either in small clusters in solution in the lattice or in voidites. Glide dislocations interacting with the platelets are likely to act as nucleating centres for the climb process. The ½ a <110> dislocation loops are considered to be formed by dissociation of the a <001> loops, promoted by interaction with glide dislocations and involving prismatic slip and conservative climb. Voidites are assumed to originate as bubbles of fluid nitrogen formed at high pressure and temperature as a result of decomposition of the platelets; at room temperature they may be liquid or solid depending on the pressure, which cannot be estimated accurately. Electron diffraction patterns and microscope images of voidites prove that many consist of a solid phase at 300 K. It is suggested that the diamond has been subjected to a drop in pressure at high temperature, causing platelet decomposition and the generation of voidites, that may occur during ejection of the diamond to the earth’s surface.

Synthesis and thermoelectric properties of tantalum-doped ZrNiSn half-Heusler alloys

2014 ◽  
Vol 07 (03) ◽  
pp. 1450032 ◽  
Author(s):  
Degang Zhao ◽  
Min Zuo ◽  
Zhenqing Wang ◽  
Xinying Teng ◽  
Haoran Geng
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Acoustic Phonon ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Phonon Scattering ◽  
Heusler Alloys ◽  
Hot Press ◽  
Arc Melting ◽  
Hot Press Sintering

The Ta -doped ZrNiSn half-Heusler alloys, Zr 1-x Ta x NiSn , were synthesized by arc melting and hot-press sintering. Microstructure of Zr 1-x Ta x NiSn compounds were analyzed and the thermoelectric (TE) properties of Zr 1-x Ta x NiSn compounds were measured from room temperature to 823 K. The electrical conductivity increased with increasing Ta content. The Seebeck coefficient of Zr 1-x Ta x NiSn compounds was sharply decreased with increasing Ta content. The Hall mobility was proportional to T-1.5 above 673 K, indicating that the acoustic phonon scattering was predominant in the temperature range. The thermal conductivity was effectively depressed by introducing Ta substitution. The figure of merit of ZrNiSn compounds was improved due to the decreased thermal conductivity and increased electrical conductivity. The maximum ZT value of 0.60 was achieved for Zr 0.97 Ta 0.03 NiSn sample at 823 K.

Characterization of pulsed laser deposited PbO/MoS2 by transmission electron microscopy

1994 ◽  
Vol 9 (1) ◽  
pp. 236-245 ◽  
Author(s):  
S.D. Walck ◽  
M.S. Donley ◽  
J.S. Zabinski ◽  
V.J. Dyhouse
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sodium Chloride ◽  
Room Temperature ◽  
Film Growth ◽  
Composite Films ◽  
Pulsed Laser ◽  
Two Phase ◽  
Transmission Electron ◽  
20 Nm

Films of PbO/MoS2, grown by pulsed laser deposition, exhibit a significant improvement in tribological performance compared to MoS2 films grown by the same process. The microstructure and crystallography of PbO/MoS2 composite films were investigated using transmission electron microscopy (TEM) to identify the features responsible for this tribological improvement. Self-supporting samples were prepared from pulsed laser deposited, PbO/MoS2 thin films grown on single crystal sodium chloride substrates. Films deposited at room temperature exhibited a two-phase microstructure with one of the phases being amorphous. X-ray microanalysis results showed that the crystalline phase had significantly higher concentration ratios of Mo/Pb, Mo/S, and Pb/S than did the amorphous phase. Films grown at 300 °C were polycrystalline, with a grain size of about 20 nm, and had a NaCl type structure which was isomorphous to PbS. The grains had rectangular shape, and exhibited preferred orientation with the sodium chloride substrate. The concentration of S for these films was approximately 80% of the S concentration for films grown at room temperature. Both the high temperature and room temperature films had S concentrations which were higher than expected from the MoS2 in the target; this was attributed to gettering of the S in the vacuum chamber by Pb. The electron diffraction results, together with previously published results, suggest that the crystal structure of the phases in these films is not responsible for the improvement in tribological properties. However, the microstructural components formed during film growth do determine the wear-induced chemical reaction pathways.

scholarly journals Hydrogen Detection with SAW Polymer/Quantum Dots Sensitive Films

Sensors ◽  
2019 ◽  
Vol 19 (20) ◽  
pp. 4481 ◽  
Author(s):  
Izabela Constantinoiu ◽  
Cristian Viespe
Keyword(s):  
Heat Treatment ◽  
Quantum Dots ◽  
Room Temperature ◽  
Limit Of Detection ◽  
Composite Films ◽  
High Specific Surface Area ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Heat Treated ◽  
Gas Molecules

Regarding the use of hydrogen as a fuel, it is necessary to measure its concentration in air at room temperature. In this paper, sensitive composite films have been developed for surface acoustic wave (SAW) sensors, using quantum dots (QDs) and polymers. Si/SiO2 QDs were used due to having a high specific surface area, which considerably improves the sensitivity of the sensors compared to those that only have a polymer. Si/SiO2 QDs were obtained by laser ablation and analyzed by X-ray diffraction and transmission electron microscopy (TEM). Two types of polymers were used: polydimethylsiloxane (PDMS) and polymethylmethacrylate (PMMA). Polymer and polymer with QDs compositions were deposited on the sensor substrate by drop casting. A heat treatment was performed on the films at 80 °C with a thermal dwell of two hours. The sensors obtained were tested at different hydrogen concentrations at room temperature. A limit of detection (LOD) of 452 ppm was obtained by the sensor with PDMS and Si/SiO2 QDs, which was heat treated. The results demonstrated the potential of using QDs to improve the sensitivity of the SAW sensors and to achieve a heat treatment that increases its adsorption capacity of the gas molecules.

Thermal Transport in Few-Quintuple Bi2Te3 Thin Films and Nanoribbons

2011 ◽  
Author(s):  
Bo Qiu ◽  
Xiulin Ruan
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Molecular Dynamics ◽  
Temperature Dependence ◽  
Thermal Transport ◽  
Room Temperature ◽  
Phonon Scattering ◽  
Md Simulations ◽  
Boundary Scattering ◽  
Nanoporous Films

In this work, thermal conductivity of perfect and nanoporous few-quintuple Bi2Te3 thin films as well as nanoribbons with perfect and zig-zag edges is investigated using molecular dynamics (MD) simulations with Green-Kubo method. We find minimum thermal conductivity of perfect Bi2Te3 thin films with three quintuple layers (QLs) at room temperature, and we believe it originates from the interplay between inter-quintuple coupling and phonon boundary scattering. Nanoporous films and nanoribbons are studied for additional phonon scattering channels in suppressing thermal conductivity. With 5% porosity in Bi2Te3 thin films, the thermal conductivity is found to decrease by a factor of 4–6, depending on temperature, comparing to perfect single QL. For nanoribbons, width and edge shape are found to strongly affect the temperature dependence as well as values of thermal conductivity.

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