Influence of the cyanine counter anions on a bi-layer solar cell performance

2013 ◽  
Vol 1493 ◽  
pp. 275-280
Author(s):  
Olga Malinkiewicz ◽  
Thais Grancha ◽  
Martijn Lenes ◽  
Hicham Brine ◽  
Alejandra Soriano ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Energy Levels ◽  
Open Circuit ◽  
Cyanine Dye ◽  
Optimal Alignment ◽  
Solar Cell Performance ◽  
Counter Ions ◽  
Donor And Acceptor ◽  
Open Circuit Voltages

ABSTRACTWe present normal and inverted solution processed bi-layer solar cells using cationic cyanine dyes as the electron donor and a fullerene as the electron acceptor. The cells exhibit high open circuit voltages up to 1 volt showing the optimal alignment of donor and acceptor energy levels. We demonstrate the large effect that cyanine dye counter ions can have on the energetics of the solar cells and how the S-shaped current density vs. voltage (J-V) curves can be avoided.

Amorphous Silicon-Carbon Alloys for Solar Cells

1993 ◽  
Vol 297 ◽  
Author(s):  
Yuan-Min Li
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Light Exposure ◽  
Open Circuit ◽  
Hydrogen Dilution ◽  
Silicon Carbon ◽  
Hydrogenated Amorphous ◽  
Substrate Temperatures ◽  
Open Circuit Voltages

Recent efforts to optimize undoped, glow-discharge hydrogenated amorphous silicon-carbon alloys (a-SiC:H) with 1.9-2.0 eV bandgaps for solar cell applications are reviewed. Hydrogen dilution coupled with relatively low substrate temperatures (below 200 °C) have led to great improvements in the optical and phototransport properties of a-SiC:H films. The issue of alternative carbon feedstocks other than methane (CH4) will be explored. The improved a-SiC:H alloys have resulted in solar cells with high open circuit voltages (V∞ > 1.0 volt) and high fill factors (> 0.7). Further, the a-SiC:H solar cell instability upon prolonged light exposure has been much reduced. Correlation will be made between the properties of bulk undoped a-SiC:H films and the performance of p-i-nsingle junction solar cells using corresponding a-SiC:H thin i-layers.

Tuning of HOMO energy levels and open circuit voltages in solar cells based on statistical copolymers prepared by ADMET polymerization

2014 ◽  
Vol 5 (21) ◽  
pp. 6287-6294 ◽  
Author(s):  
Bryan D. Paulsen ◽  
Joshua C. Speros ◽  
Megan S. Claflin ◽  
Marc A. Hillmyer ◽  
C. Daniel Frisbie
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
Energy Levels ◽  
Open Circuit ◽  
Homo Energy ◽  
Admet Polymerization ◽  
Donor Acceptor ◽  
Statistical Copolymer ◽  
Open Circuit Voltages

A donor–acceptor statistical copolymer series spanning the entire composition window was prepared and studied in organic solar cells.

Incorporating a vertical BDT unit in conjugated polymers for drastically improving the open-circuit voltage of polymer solar cells

2016 ◽  
Vol 40 (6) ◽  
pp. 5300-5305 ◽  
Author(s):  
Shuguang Wen ◽  
Manjun Xiao ◽  
Wenfei Shen ◽  
Chuantao Gu ◽  
Dangqiang Zhu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Conjugated Polymers ◽  
Open Circuit Voltage ◽  
Polymer Solar Cells ◽  
Open Circuit ◽  
Open Circuit Voltages

High open circuit voltages (Vocs) of over 1.0 V were obtained for solar cell devices based on vertical BDT-containing conjugated polymers.

Nanoparticle-Based Contacts to CdTe

1998 ◽  
Vol 536 ◽  
Author(s):  
D. L. Schulz ◽  
R. Ribelin ◽  
C. J. Curtis ◽  
D. E. King ◽  
D. S. Ginley
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Valence State ◽  
Series Resistance ◽  
Open Circuit ◽  
Standard Methods ◽  
Cdte Solar Cell ◽  
Cdte Solar Cells ◽  
Device Properties ◽  
Open Circuit Voltages

AbstractOur team has been investigating the use of particle-based contacts in CdTe solar cell technologies. Toward this end, particles of Cu-doped HgTe (Hg-Cu-Te) and Sb-Te have been applied as contacts to CdTe/CdS/SnO2 heterostructures. These metal telluride materials were characterized by standard methods. Hg-Cu-Te particles in graphite electrodag contacts produced CdTe solar cells with efficiencies above 12% and series resistance (Rse) of 6 Ω or less. Metathesis preparation of Cu(I) and Cu(II) tellurides (i.e., Cu2Te and CuTe, respectively) were attempted as a means of characterizing the valence state of Cu in the Hg-Cu-Te ink. For Sb-Te contacts to CdTe, open circuit voltages (Vocs) in excess of 800 mV were observed, however, efficiencies were limited to 9%; perhaps a consequence of the marked increase in the Rse (i.e., >20 Ω) in these non-graphite containing contacts. Acetylene black was mixed into the methanolic Sb-Te colloid as a means of reducing Rse, however, no improvement in device properties was observed.

Solar Cell Performance Under Different Illumination Conditions

2001 ◽  
Vol 664 ◽  
Author(s):  
Christian Gemmer ◽  
Markus B. Schubert
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Poor Performance ◽  
Electronic System ◽  
Open Circuit ◽  
Cell Performance ◽  
Superior Performance ◽  
Electronic Systems ◽  
Shunt Resistance ◽  
Solar Cell Performance

ABSTRACTWe numerically simulate performance data of hydrogenated amorphous silicon (a-Si:H) and copper indium gallium diselenide (CIGS) based solar cells for various illumination conditions. For ease of comparison, we model typical single junctions with the very same software. The study allows us to evaluate the cell feasibility in different hybrid electronic systems like smart cards, wrist watches, transponder systems, and mobile sensors. At an illumination intensity of 1 sun, the optical bandgap of the absorber material and the series resistances determine the spectral sensitivity of the solar cell to particular illumination spectra. For intensities of 10-2 suns and so-called D65 spectrum, which represents daylight under cloudy skies, the efficiency of a-Si:H solar cells nearly equates the CIGS cell performance although the AM 1.5 efficiency of the CIGS diode exceeds the one of our a-Si:H cell by more than a factorof two. Infrared-weighted black body radiation leads to superior performance of the CIGS type, whereas for ultraviolet-weighted illumination the a-Si:H cell shows better performance. For intensities below 10-4 suns theexternal shunt resistance dominates the current-voltage characteristics of both cell types, resulting in poor performance independent of the incident spectrum. We complete our study by simulating the solar-powered charging process of a gold capacitor, which serves us as a model for the energy storage within a hybrid electronic system. The charging behavior under various realistic illumination conditions shows particular cellcharacteristics: high open circuit voltages qualify a-Si:H solar cells for electronic systems that require increased voltages and CIGS cells are suited for applications with higher current need.

F-Substituted oligothiophenes serve as nonfullerene acceptors in polymer solar cells with open-circuit voltages >1 V

2018 ◽  
Vol 6 (20) ◽  
pp. 9368-9372 ◽  
Author(s):  
Tainan Duan ◽  
Maxime Babics ◽  
Akmaral Seitkhan ◽  
Yuliar Firdaus ◽  
Ru-Ze Liang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Polymer Solar Cells ◽  
Open Circuit ◽  
Low Bandgap ◽  
Open Circuit Voltages

F-Substituted oligothiophenes were designed and used as nonfullerene acceptors in BHJ solar cells. With low-bandgap polymer donors, the solar cell devices reach PCEs of up to 4.5% and open-circuit voltages >1 V.

Resistive Losses at c-Si/a-Si:H/ZnO Contacts for Heterojunction Solar Cells

2007 ◽  
Vol 989 ◽  
Author(s):  
Florian Einsele ◽  
Phillip Johannes Rostan ◽  
Uwe Rau
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Fill Factor ◽  
High Efficiency ◽  
Surface Recombination ◽  
Open Circuit ◽  
Surface Recombination Velocity ◽  
High Hydrogen ◽  
Solar Cell Performance ◽  
Heterojunction Solar Cells

AbstractWe study resistive losses at (p)c-Si/(p)Si:H/(n)ZnO heterojunction back contacts for high efficiency silicon solar cells. We find that a low tunnelling resistance for the (p)a-Si:H/(n)ZnO part of the junction requires deposition of Si:H with a high hydrogen dilution RH > 40 resulting in a highly doped μc-Si:H layer. Such a μc-Si:H layer if deposited directly on a Si wafer yields a surface recombination velocity of S  180 cm/s. Using the same layer as part of a (p)c-Si/(p)Si:H/(n)ZnO back contact in a solar cell results in an open circuit voltage Voc = 640 mV and a fill factor FF = 80 %. Insertion of an (i)a-Si-layer between the μc-Si:H and the wafer leads to a further decrease of S and, for the solar cells to an increase of VOC. However, if the thickness of this intrinsic layer exceeds a threshold of 3 nm, resistive losses lead to a degradation of the fill factor of the solar cells. These resistive losses result from a valence band offset δEV between a-Si:H and c-Si of about 600 meV. The fill factor losses overcompensate the VOC gain such that there is no benefit of the (i)a-Si:H interlayer for the overall solar cell performance when using an (i)a-Si:H/(p)uc-Si:H double layer.

Comment on “Fullerene-based materials for solar cell applications: design of novel acceptors for efficient polymer solar cells – a DFT study” by A. Mohajeri and A. Omidvar, Phys. Chem. Chem. Phys., 2015, 17, 22367

2016 ◽  
Vol 18 (5) ◽  
pp. 4216-4218 ◽  
Author(s):  
Denis Sh. Sabirov ◽  
Anton O. Terentyev ◽  
Igor S. Shepelevich
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Organic Solar Cells ◽  
Polymer Solar Cells ◽  
Chem Phys ◽  
Open Circuit ◽  
Dft Study ◽  
Fullerene Derivatives ◽  
Open Circuit Voltages ◽  
Phys Chem Chem Phys

In contrast to the previous study, we report on no correlation between mean polarizability of fullerene derivatives and open-circuit voltages of organic solar cells based on them.

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