Influence of Atmospheric Pressure Torch Plasma Irradiation on Plant Growth

2012 ◽  
Vol 1469 ◽  
Author(s):  
Yusuke Akiyoshi ◽  
Nobuya Hayashi ◽  
Satoshi Kitazaki ◽  
Kazunori Koga ◽  
Masaharu Shiratani

ABSTRACTGrowth enhancement characteristics of plants are investigated using an atmospheric discharge plasma. Atmospheric pressure plasma torch is consisted of alumina ceramics tube and the steel mesh electrodes wound inside and outside of the tube. The growth enhancement was observed in the length of stem and root of plants after the plasma irradiation to seeds. The stem length increases approximately 2.8 times after the cultivation time of 24 h. And the effect is found to be maintained for 40 h, after sowing seeds. The mechanism of the growth enhancement would be the redox reaction inside plant cells induced by oxygen radicals.

2019 ◽  
Vol 215 ◽  
pp. 01003
Author(s):  
Christoph Gerhard ◽  
Marco Stappenbeck ◽  
Daniel Tasche

In this contribution, a plasma-based approach for finishing optics surfaces is introduced. Experiments were performed on classically manufactured zinc crown glass and sapphire. It is shown that the use of direct dielectric barrier discharge plasma at atmospheric pressure allows the removal of surface-adherent carbonaceous contaminations that were induced by classical manufacturing. Moreover, the use of such plasma leads to a certain decrease in surface roughness. Both effects, surface cleaning and smoothing finally increase the laser-induced damage threshold of optical components.


2008 ◽  
Vol 47-50 ◽  
pp. 1015-1018 ◽  
Author(s):  
Hong Ying Chen ◽  
Lien Teng Kuo ◽  
Wan Yu Chang ◽  
Cheng Hsien Tsai

A 2.45 GHz microwave atmospheric pressure torch is employed to prepare cuprous oxide films. The sputtered copper films are firstly deposited on slide glass. After that, the films are annealed in air at 500°C for 12 h, which would directly oxidize into cupric oxide. The annealed films are then treated by atmospheric nitrogen plasma at 800 W for 10 min. The color changed significantly from black to reddish brown after nitrogen plasma treatment. The X-ray diffraction patterns show that annealed films are cupric oxide which is vanished after plasma treatment. The cuprous oxide films appeared after nitrogen plasma treatment. The resistivity of annealed films is 16.7 --cm, which reduce to 2.08 --cm after plasma treatment. The optical band gap of annealed films, cupric oxide phase, is 2.1 eV but the value shifts toward 2.4 eV after plasma treatment. The novel microwave plasma torch posses a fast and easy way to fabricate cuprous oxide films.


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