Effect of Substrate Strain and Interface on Magnetic Properties of EuTiO3 Thin Film

2012 ◽  
Vol 1454 ◽  
pp. 149-159
Author(s):  
Katsuhisa Tanaka ◽  
Koji Fujita ◽  
Yuya Maruyama ◽  
Yoshiro Kususe ◽  
Hideo Murakami ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Film Surface ◽  
Lattice Parameter ◽  
Experimental Result ◽  
Ferromagnetic Behavior ◽  
Spin Configuration ◽  
Strongly Coupled ◽  
Lattice Volume

ABSTRACTBulk EuTiO3 is known as a compound in which spin and soft phonon mode is strongly coupled. Recent theoretical study suggests that application of stress or formation of strain leads to a drastic change in magnetic and dielectric properties of EuTiO3 and that so-called multiferroic properties emerge under such a situation. In the present study, effect of strain induced by a substrate, on which EuTiO3 thin film is deposited, on the magnetic properties of the film has been experimentally examined. By using a pulsed laser deposition method, EuTiO3 thin film has been deposited on different kinds of substrate, i.e., LaAlO3, SrTiO3, and DyScO3; the lattice parameter of these compounds is smaller than, just the same as, and larger than that of EuTiO3, respectively. X-ray diffraction analysis confirms that the strain induced in the plane of as-deposited EuTiO3 thin films on different substrates is coincident with the lattice parameter of the substrate compounds. Also, all the as-deposited EuTiO3 thin films manifest elongation of lattice in a direction perpendicular to the film surface. Temperature dependence of magnetization indicates that all the thin films exhibit ferromagnetic behavior at low temperatures. The magnetization at 2 K under a magnetic field of 100 Oe is the highest for EuTiO3 on DyScO3 and the lowest for EuTiO3 on LaAlO3. The experimental result is coincident with the first-principles calculations which predict that ferromagnetic spin configuration becomes more stable as the lattice volume of EuTiO3is increased.

scholarly journals Structural, Wetting and Magnetic Properties of Sputtered Fe70Pd30 Thin Film with Nanostructured Surface Induced by Dealloying Process

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 282
Author(s):  
Gabriele Barrera ◽  
Federica Celegato ◽  
Matteo Cialone ◽  
Marco Coïsson ◽  
Paola Rizzi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Magnetic Measurements ◽  
Film Surface ◽  
Direct Consequence ◽  
X Ray Diffraction ◽  
Sem Images ◽  
Sputtering Deposition ◽  
Research Fields

FePd alloys in the thin film form represent a multipurpose and versatile material with relevant chemical and physical properties studied in different research fields. Moreover, the ability to manipulate and fine-tune the film surface with nanometric scale precision represents a degree of freedom useful to adapt these thin film properties to the demands of different desired applications. In this manuscript, Fe70Pd30 (at. %) thin films are prepared with a thickness of 50 and 200 nm by means of the widely used co-sputtering deposition technique. Subsequently, selective removal of the iron element from the alloy and the consequent surface diffusion of the palladium was induced by a dealloying treatment under free corrosion conditions in hydrochloric acid. The size and shape of the grains of the as-deposited thin films determine the dissolution rate of the iron element with a direct consequence not only on the surface morphology and the stoichiometry of the alloy but also on the wetting and magnetic properties of the sample. X-ray diffraction, Scanning Electron Microscopy (SEM) images, contact angle and magnetic measurements have been performed to provide a thorough characterisation of the fundamental properties of these nanostructured bimetallic thin films.

scholarly journals Precise control of Jeff=12 magnetic properties in Sr2IrO4 epitaxial thin films by variation of strain and thin film thickness

2020 ◽  
Vol 102 (21) ◽  
Author(s):  
Stephan Geprägs ◽  
Björn Erik Skovdal ◽  
Monika Scheufele ◽  
Matthias Opel ◽  
Didier Wermeille ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Film Thickness ◽  
Epitaxial Thin Films ◽  
Thin Film Thickness ◽  
Precise Control

scholarly journals Thin film bi-epitaxy and transition characteristics of TiO2/TiN buffered VO2 on Si(100) substrates

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2635-2640 ◽  
Author(s):  
Adele Moatti ◽  
Reza Bayati ◽  
Srinivasa Rao Singamaneni ◽  
Jagdish Narayan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Frequency Factor ◽  
Misfit Strain ◽  
Buffer Layers ◽  
Intrinsic Defects ◽  
Domain Matching Epitaxy ◽  
Out Of Plane

ABSTRACTBi-epitaxial VO2 thin films with [011] out-of-plane orientation were integrated with Si(100) substrates through TiO2/TiN buffer layers. At the first step, TiN is grown epitaxially on Si(100), where a cube-on-cube epitaxy is achieved. Then, TiN was oxidized in-situ ending up having epitaxial r-TiO2. Finally, VO2 was deposited on top of TiO2. The alignment across the interfaces was stablished as VO2(011)║TiO2(110)║TiN(100)║Si(100) and VO2(110) /VO2(010)║TiO2(011)║TiN(112)║Si(112). The inter-planar spacing of VO2(010) and TiO2(011) equal to 2.26 and 2.50 Å, respectively. This results in a 9.78% tensile misfit strain in VO2(010) lattice which relaxes through 9/10 alteration domains with a frequency factor of 0.5, according to the domain matching epitaxy paradigm. Also, the inter-planar spacing of VO2(011) and TiO2(011) equals to 3.19 and 2.50 Å, respectively. This results in a 27.6% compressive misfit strain in VO2(011) lattice which relaxes through 3/4 alteration domains with a frequency factor of 0.57. We studied semiconductor to metal transition characteristics of VO2/TiO2/TiN/Si heterostructures and established a correlation between intrinsic defects and magnetic properties.

Exotic Doping for Zno Thin Films: Possibility of Monolithic Optical Integrated Circuit

1999 ◽  
Vol 574 ◽  
Author(s):  
Norifumi Fujimura ◽  
Tamaki Shimura ◽  
Toshifumi Wakano ◽  
Atsushi Ashida ◽  
Taichiro Ito
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Nonlinear Optic ◽  
Integrated Circuit ◽  
Film Surface ◽  
Zno Thin Films ◽  
Process Window ◽  
Electro Optic ◽  
Film Substrate ◽  
Optical Integrated Circuit

AbstractWe propose the application of ZnO:X (X = Li, Mg, N, In, Al, Mn, Gd, Yb etc.) films for a monolithic Optical Integrated Circuit (OIC). Since ZnO exhibits excellent piezoelectric effect and has also electro-optic and nonlinear optic effects and the thin films are easily obtained, it has been studied as one of the important thin film wave guide materials especially for an acoustooptic device[1]. In terms of electro-optic and nonlinear optic effects, however, LiNbO3 or LiTaO3 is superior to ZnO. The most important issue of thin film waveguide using such ferroelectrics is optical losses at the film/substrate interface and the film surface, because the process window to control the surface morphology is very narrow due to their high deposition temperature. Since ZnO can be grown at extremely low temperature, the roughness at the surface and the interface is expected to be minimized. This is the absolute requirement especially for waveguide using a blue or ultraviolet laser. Recently, lasing at the wavelength of ultraviolet, ferroelectric and antiferromagnetic behaviors of ZnO doped with various exotic elements (exotic doping) have been reported. This paper discusses the OIC application of ZnO thin films doped with exotic elements.

The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology

2011 ◽  
Vol 239-242 ◽  
pp. 891-894 ◽  
Author(s):  
Tsung Fu Chien ◽  
Jen Hwan Tsai ◽  
Kai Huang Chen ◽  
Chien Min Cheng ◽  
Chia Lin Wu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Morphological Characterization ◽  
Experimental Result ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Capacitance Voltage ◽  
Preferential Crystal Orientation

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

Development of the Structural, Optical, and Electrical Properties of PEDOT:PSS Conducting Polymer Thin Film for Energy Applications

2021 ◽  
Vol 902 ◽  
pp. 65-70
Author(s):  
Samar Aboulhadeed ◽  
Mohsen Ghali ◽  
Mohamad M. Ayad
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Conducting Polymer ◽  
Film Surface ◽  
Volume Ratio ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Optical And Electrical Properties ◽  
Energy Applications

We report on a development of the structural, optical and electrical properties of poly (3,4-ethylenedioxythiophene)-poly (styrenesulfonate) (PEDOT:PSS) conducting polymer thin films. The PEDOT:PSS thin films were deposited by a controlled thin film applicator and their physical properties were found to be effectively modified by isopropanol. The deposited films were investigated by several techniques including XRD, UV–Vis, SPM and Hall-effect. Interestingly, by optimizing the PEDOTS:PSS/ISO volume ratio (v:v), we find that the film charge carriers type can be switched from p to n-type with a high bulk carriers concentration reaching 6×1017 cm-3. Moreover, the film surface roughness becomes smoother and reaching a small value of only 1.9 nm. Such development of the PEDOT:PSS film properties makes it very promising to act as an electron transport layer for different energy applications.

scholarly journals Enhanced Magnetic Properties of BiFeO3 Thin Films by Doping: Analysis of Structure and Morphology

Nanomaterials ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 711 ◽  
Author(s):  
Yilin Zhang ◽  
Yuhan Wang ◽  
Ji Qi ◽  
Yu Tian ◽  
Mingjie Sun ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Sol Gel ◽  
Exchange Interactions ◽  
Ferromagnetic Behavior ◽  
Ferromagnetic Properties ◽  
Structure And Morphology ◽  
Related Diversification ◽  
Lattice Distortions ◽  
Mn Doped

The improvement of ferromagnetic properties is critical for the practical application of multiferroic materials, to be exact, BiFeO3 (BFO). Herein, we have investigated the evolution in the structure and morphology of Ho or/and Mn-doped thin films and the related diversification in ferromagnetic behavior. BFO, Bi0.95Ho0.05FeO3 (BHFO), BiFe0.95Mn0.05O3 (BFMO) and Bi0.95Ho0.05Fe0.95Mn0.05O3 (BHFMO) thin films are synthesized via the conventional sol-gel method. Density, size and phase structure are crucial to optimize the ferromagnetic properties. Specifically, under the applied magnetic field of 10 kOe, BHFO and BFMO thin films can produce obvious magnetic properties during magnetization and, additionally, doping with Ho and Mn (BHFMO) can achieve better magnetic properties. This enhancement is attributed to the lattice distortions caused by the ionic sizes difference between the doping agent and the host, the generation of the new exchange interactions and the inhibition of the antiferromagnetic spiral modulated spin structure. This study provides key insights of understanding the tunable ferromagnetic properties of co-doped BFO.

scholarly journals Positioning of the Precursor Gas Inlet in an Atmospheric Dielectric Barrier Reactor, and its Effect on the Quality of Deposited TiOx Thin Film Surface

10.14311/1767 ◽  
2013 ◽  
Vol 53 (2) ◽  
Author(s):  
Jan Píchal ◽  
Julia Klenko
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Barrier Discharge ◽  
Atmospheric Pressure ◽  
Barrier Discharge ◽  
Film Surface ◽  
Dielectric Barrier ◽  
Thin Film Surface ◽  
Atmospheric Dielectric Barrier Discharge

Thin film technology has become pervasive in many applications in recent years, but it remains difficult to select the best deposition technique. A further consideration is that, due to ecological demands, we are forced to search for environmentally benign methods. One such method might be the application of cold plasmas, and there has already been a rapid growth in studies of cold plasma techniques. Plasma technologies operating at atmospheric pressure have been attracting increasing attention. The easiest way to obtain low temperature plasma at atmospheric pressure seems to be through atmospheric dielectric barrier discharge (ADBD). We used the plasma enhanced chemical vapour deposition (PECVD) method applying atmospheric dielectric barrier discharge (ADBD) plasmafor TiOx thin films deposition, employing titanium isopropoxide (TTIP) and oxygen as reactants, and argon as a working gas. ADBD was operated in filamentary mode. The films were deposited on glass. We studied the quality of the deposited TiOx thin film surface for various precursor gas inlet positions in the ADBD reactor. The best thin films quality was achieved when the precursor gases were brought close to the substrate surface directly through the inlet placed in one of the electrodes.High hydrophilicity of the samples was proved by contact angle tests (CA). The film morphology was tested by atomic force microscopy (AFM). The thickness of the thin films varied in the range of (80 ÷ 210) nm in dependence on the composition of the reactor atmosphere. XPS analyses indicate that composition of the films is more like the composition of TiOxCy.

scholarly journals Effect of RF Power on the Properties of Sputtered-CuS Thin Films for Photovoltaic Applications

Energies ◽  
2020 ◽  
Vol 13 (3) ◽  
pp. 688 ◽  
Author(s):  
Donghyeok Shin ◽  
SangWoon Lee ◽  
Dong Ryeol Kim ◽  
Joo Hyung Park ◽  
Yangdo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Binding Energy ◽  
Indium Tin Oxide ◽  
Short Circuit ◽  
Film Surface ◽  
Binding Energies ◽  
Tin Sulfide ◽  
Rf Power ◽  
Deposition Power

Copper sulfide (CuS) thin films were deposited on a glass substrate at room temperature using the radio-frequency (RF) magnetron-sputtering method at RF powers in the range of 40–100 W, and the structural and optical properties of the CuS thin film were investigated. The CuS thin films fabricated at varying deposition powers all exhibited hexagonal crystalline structures and preferred growth orientation of the (110) plane. Raman spectra revealed a primary sharp and intense peak at the 474 cm−1 frequency, and a relatively wide peak was found at 265 cm−1 frequency. In the CuS thin film deposited at an RF power of 40 W, relatively small dense particles with small void spacing formed a smooth thin-film surface. As the power increased, it was observed that grain size and grain-boundary spacing increased in order. The binding energy peaks of Cu 2p3/2 and Cu 2p1/2 were observed at 932.1 and 952.0 eV, respectively. Regardless of deposition power, the difference in the Cu2+ state binding energies for all the CuS thin films was equivalent at 19.9 eV. We observed the binding energy peaks of S 2p3/2 and S 2p1/2 corresponding to the S2− state at 162.2 and 163.2 eV, respectively. The transmittance and band-gap energy in the visible spectral range showed decreasing trends as deposition power increased. For the CuS/tin sulfide (SnS) absorber-layer-based solar cell (glass/Mo/absorber(CuS/SnS)/cadmium sulfide (CdS)/intrinsic zinc oxide (i-ZnO)/indium tin oxide (ITO)/aluminum (Al)) with a stacked structure of SnS thin films on top of the CuS layer deposited at 100 W RF power, an open-circuit voltage (Voc) of 115 mA, short circuit current density (Jsc) of 9.81 mA/cm2, fill factor (FF) of 35%, and highest power conversion efficiency (PCE) of 0.39% were recorded.

scholarly journals Imaging of Chemical Reactions Using a Terahertz Chemical Microscope

Photonics ◽  
2019 ◽  
Vol 6 (1) ◽  
pp. 10 ◽  
Author(s):  
Toshihiko Kiwa ◽  
Tatsuki Kamiya ◽  
Taiga Morimoto ◽  
Kentaro Fujiwara ◽  
Yuki Maeno ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Reactions ◽  
Field Effect ◽  
Film Surface ◽  
Experimental Setup ◽  
Substrate Side ◽  
Surface Field ◽  
Silicon Based ◽  
Si Thin Film

This study develops a terahertz (THz) chemical microscope (TCM) that visualizes the distribution of chemical reaction on a silicon-based sensing chip. This chip, called the sensing plate, was fabricated by depositing Si thin films on a sapphire substrate and thermally oxidizing the Si film surface. The Si thin film of the sensing plate was irradiated from the substrate side by a femtosecond laser, generating THz pulses that were radiated into free space through the surface field effect of the Si thin film. The surface field responds to chemical reactions on the surface of the sensing plate, changing the amplitude of the THz pulses. This paper first demonstrates the principle and experimental setup of the TCM and performs the imaging and measurement of chemical reactions, including the reactions of bio-related materials.

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