Study of the Deep Levels of a GaAs/p-GaAs1−xBix Heterostructure Grown by Molecular Beam Epitaxy

2012 ◽  
Vol 1432 ◽  
Author(s):  
Takuma Fuyuki ◽  
Shota Kashiyama ◽  
Kunishige Oe ◽  
Masahiro Yoshimoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Defect Formation ◽  
Deep Level ◽  
Level Density ◽  
State Density ◽  
Level Densities ◽  
Device Applications ◽  
Transient Spectroscopy

ABSTRACTDeep-level densities of p-GaAs1−xBix and at the GaAs/p-GaAs1−xBix heterointerface have been shown to be sufficiently low for device applications based on the results of deep-level transient spectroscopy, isothermal capacitance transient spectroscopy and admittance spectroscopy. Although the metastable alloy of GaAs1−xBix is grown by molecular beam epitaxy at low temperature (370 °C), the deep-level density of p-GaAs1−xBix is suppressed such that it is on the order of 1015 cm−3. The state density at the heterointerface was determined to be 8 · 1011 cm−2eV−1, which is comparable to other III–V heterointerfaces formed at high temperatures. The surfactant-like effect of Bi is believed to prevent defect formation during low-temperature growth.

Traps in Si-doped AlxGa1-xN Grown by Molecular Beam Epitaxy on Sapphire Characterized by Deep Level Transient Spectroscopy

2006 ◽  
Vol 955 ◽  
Author(s):  
Mo Ahoujja ◽  
S Elhamri ◽  
M Hogsed ◽  
Y. K. Yeo ◽  
R. L. Hengehold
Keyword(s):  
Molecular Beam Epitaxy ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Beam ◽  
Deep Level ◽  
Unknown Origin ◽  
Shallow Donor ◽  
Related Point ◽  
Line Defects ◽  
Si Doped ◽  
Transient Spectroscopy

ABSTRACTDeep levels in Si doped AlxGa1−xN samples, with Al mole fraction in the range of x = 0 to 0.30, grown by radio-frequency plasma activated molecular beam epitaxy on sapphire substrates were characterized by deep level transient spectroscopy (DLTS). DLTS measurements show two significant electron traps, P1 and P2, in AlGaN at all aluminum mole fractions. The electron trap, P2, appears to be a superposition of traps A and B , both of which are observed in GaN grown by various growth techniques and are thought to be related to VGa-shallow donor complexes. Trap P1 is related to line defects and N-related point defects. Both of these traps are distributed throughout the bulk of the epitaxial layer. An additional trap P0 which was observed in Al0.20Ga0.80N and Al0.30Ga0.70N is of unknown origin, but like P1 and P2, it exhibits dislocation-related capture kinetics. The activation energy measured from the conduction band of the defects is found to increase with Al mole content, a behavior consistent with other III-V semiconductors.

Study of Substrate Induced Deep Level Defects in Bulk GaN Layers Grown by Molecular Beam Epitaxy Using Deep Level Transient Spectroscopy

2011 ◽  
Vol 295-297 ◽  
pp. 777-780 ◽  
Author(s):  
M. Ajaz Un Nabi ◽  
M. Imran Arshad ◽  
Adnan Ali ◽  
M. Asghar ◽  
M. A Hasan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Beam ◽  
Deep Level ◽  
Diffusion Mechanism ◽  
Electron Trap ◽  
Si Substrate ◽  
Bulk Gan ◽  
Related Defect ◽  
Transient Spectroscopy

In this paper we have investigated the substrate-induced deep level defects in bulk GaN layers grown onp-silicon by molecular beam epitaxy. Representative deep level transient spectroscopy (DLTS) performed on Au-GaN/Si/Al devices displayed only one electron trap E1at 0.23 eV below the conduction band. Owing to out-diffusion mechanism; silicon diffuses into GaN layer from Si substrate maintained at 1050°C, E1level is therefore, attributed to the silicon-related defect. This argument is supported by growth of SiC on Si substrate maintained at 1050°C in MBE chamber using fullerene as a single evaporation source.

Electrical Characterization Of Nitrogen Acceptors In p-ZnSe/p-GaAs Grown By Molecular Beam Epitaxy

1996 ◽  
Vol 442 ◽  
Author(s):  
D. Seghier ◽  
H.P. Gislason
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Deep Level ◽  
Energy Levels ◽  
Reverse Current ◽  
Electrical Characterization ◽  
Growth Conditions ◽  
Current Voltage ◽  
Major Interest ◽  
Transient Spectroscopy

AbstractUsing current-voltage measurements, deep-level transient spectroscopy and admittance spectroscopy we investigated nitrogen doped ZnSe grown on p-GaAs substrates by molecular beam epitaxy. Three major hole traps were observed with energy levels at 0. 11, 0.46, and 0.56 eV from the valence band. We attribute the level at 0.11 eV to a nitrogen acceptor. No other direct observations of this important acceptor level in p-ZnSe have been reported in the literature so far. The two remaining levels may originate from the nitrogen doping process. In addition, reverse current-voltage characteristics of the ZnSe/GaAs heterojunction show a hysteresis at low temperature and a soft saturation. At a constant reverse bias the current increases slowly until it reaches a steady state value. This behavior is attributed to a slow voltage-induced barrier lowering due to the presence of mismatch interface states. Therefore, these analyses are of a major interest for applications of ZnSe/GaAs based devices and illustrates the necessity of improving the growth conditions of such structures.

Dominant Deep Level in Annealed Low-Temperature GaAs Layers Grown by Molecular Beam Epitaxy

1994 ◽  
Vol 33 (Part 2, No. 12A) ◽  
pp. L1651-L1654 ◽  
Author(s):  
Tsai-Cheng Lin ◽  
Hiromasa T. Kaibe ◽  
Tsugunori Okumura
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Deep Level ◽  
Low Temperature Gaas

scholarly journals Characteristics of Deep Centers Observed in n-GaN Grown by Reactive Molecular Beam Epitaxy

2000 ◽  
Vol 5 (S1) ◽  
pp. 943-949 ◽  
Author(s):  
Z-Q. Fang ◽  
D. C. Look ◽  
Wook Kim ◽  
H. Morkoç
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Deep Level ◽  
Strong Electric Field ◽  
Chemical Vapor ◽  
Hydride Vapor Phase Epitaxy ◽  
Electric Field Effects ◽  
Deep Centers ◽  
Si Doped ◽  
Transient Spectroscopy

Deep centers in Si-doped n-GaN samples grown on sapphire by reactive molecular beam epitaxy, using different ammonia flow rates (AFRs), have been studied by deep level transient spectroscopy. In addition to five electron traps, which were also found in n-GaN layers grown by both metalorganic chemical-vapor deposition and hydride vapor-phase epitaxy, two new centers C1 (0.43-0.48 eV) and E1 (0.25 eV) have been observed. C1, whose parameters show strong electric-field effects and anomalous electron capture kinetics, might be associated with dislocations. E1, which is very dependent on the AFR, exhibits an activation energy close to that of a center created by electron irradiation and is believed to be a defect complex involving VN.

Characteristics of Deep Centers Observed in n-GaN Grown by Reactive Molecular Beam Epitaxy

1999 ◽  
Vol 595 ◽  
Author(s):  
Z-Q. Fang ◽  
D. C. Look ◽  
Wook Kim ◽  
H. Morkoç
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Deep Level ◽  
Strong Electric Field ◽  
Chemical Vapor ◽  
Hydride Vapor Phase Epitaxy ◽  
Electric Field Effects ◽  
Deep Centers ◽  
Si Doped ◽  
Transient Spectroscopy

AbstractDeep centers in Si-doped n-GaN samples grown on sapphire by reactive molecular beam epitaxy, using different ammonia flow rates (AFRs), have been studied by deep level transient spectroscopy. In addition to five electron traps, which were also found in n-GaN layers grown by both metalorganic chemical-vapor deposition and hydride vapor-phase epitaxy, two new centers C1 (0.43-0.48 eV) and E1 (0.25 eV) have been observed. C1, whose parameters show strong electric-field effects and anomalous electron capture kinetics, might be associated with dislocations. E1, which is very dependent on the AFR, exhibits an activation energy close to that of a center created by electron irradiation and is believed to be a defect complex involving VN.

Thermally stimulated current spectroscopy of carbon-doped GaN grown by molecular beam epitaxy

2003 ◽  
Vol 798 ◽  
Author(s):  
Z-Q. Fang ◽  
D. C. Look ◽  
R. Armitage ◽  
Q. Yang ◽  
E. R. Weber
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Thermal Emission ◽  
Deep Level ◽  
High Resistivity ◽  
Organic Chemical ◽  
Thermally Stimulated Current ◽  
Chemical Phase ◽  
Metal Organic ◽  
Transient Spectroscopy

ABSTRACTDeep traps in semi-insulating (SI) or high-resistivity C-doped GaN grown by metal-organic chemical-phase deposition or molecular-beam epitaxy have been studied by thermally stimulated current (TSC) spectroscopy. Incorporation of carbon in GaN introduces CNacceptors, resulting in compensation and formation of SI-GaN; however, as [C] increases in the GaN samples, both resistivity and activation energy of the dark current decrease. In the GaN samples with low [C], we find at least six TSC traps: B (0.61 eV), Bx(0.50 eV), C1(0.44 eV), C (0.32 eV), D (0.23 eV), and E (0.16 eV), all of which are very similar to electron traps typically found in n-type GaN by deep level transient spectroscopy (DLTS). However, in the GaN sample with the highest [C], both traps E and B are suppressed, and instead, trap Bxappears. Based on DLTS studies of electron-irradiated and plasma-etched GaN samples, we believe that traps E, D and C are related to VN, and that trap B is probably related to VGa, in the form of complexes such as VGa-ON. As [C] increases, CGadonors become more favorable, and the transition of trap B to trap Bxmay suggest that CGarelated complexes are forming. In comparison with lightly C-doped GaN, heavily C-doped GaN sample exhibits very strong PPC at 83 K. We show that the PPC in both cases can be simply explained by the thermal emission of carriers from shallower traps.

Sign in / Sign up

Export Citation Format

Share Document