Influence of Ammoniating Temperatures on Microstructures, Morphologies and Optical Properties of GaN/Nb Nanostructures by RF Magnetron Sputtering Technique

2012 ◽  
Vol 1439 ◽  
pp. 17-23
Author(s):  
Feng Shi ◽  
Chengshan Xue
Keyword(s):  
Electron Microscopy ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Hexagonal Wurtzite Structure ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gan Nanowires ◽  
Transmission Electron

AbstractGaN nanowires and nanorods have been successfully synthesized on Si (111) substrates by magnetron sputtering through ammoniating Ga2O3/Nb thin films and the effects of ammoniation temperatures on growth of GaN nanowires and nanorods were analyzed in detail. X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, high-resolution transmission electron microscopy, and photoluminescence spectra were carried out to characterize microstructures, morphologies, and optical properties of GaN samples. The results demonstrate that sample after ammoniation at 950 °C is single crystal GaN with hexagonal wurtzite structure and high crystalline quality, having the size of 30 - 80 nm in diameter. After ammoniation at 1000 °C, GaN nanorods appear with smooth and clean surface and more than 100 nm in diameter. The optical properties of GaN nanowires grown at 950 °C and nanorods grown at 1000 °C are best with strong emission intensities.

Preparation and Characterization of Mg-Doped GaN Nanowires by Au-Catalyzed Magnetron Sputtering Deposition

2014 ◽  
Vol 809-810 ◽  
pp. 193-200 ◽  
Author(s):  
Ru Guo Liang ◽  
Rui Liang ◽  
Gang Cao ◽  
Feng Shi
Keyword(s):  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Hexagonal Wurtzite Structure ◽  
X Ray Diffraction ◽  
Sputtering Deposition ◽  
X Ray ◽  
Gan Nanowires ◽  
Microstructure Morphology ◽  
Au Thin Films ◽  
Mg Doped

Mg-doped GaN nanowires have been successfully synthesized on Si (111) substrates by magnetron sputtering deposition through ammoniating Ga2O3/Au thin films at 900 °C for 15 min. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and photoluminescence (PL) spectrum were carried out to characterize microstructure, morphology, and optical property of GaN sample. The results demonstrate that the nanowires are single-crystal Mg-doped GaN with hexagonal wurtzite structure and high crystalline quality, which have the size of 40 nm in diameter and several tens of microns in length and good emission property. The growth procedure mainly follows the VLS mechanism, and Au plays an important role as catalyst, and more defect energy is formed due to metallic Au and thus promote the growth of GaN nanowires.

scholarly journals Microstructure and Oxidation Behavior of Metal V Films Deposited by Magnetron Sputtering

Materials ◽  
2019 ◽  
Vol 12 (3) ◽  
pp. 425 ◽  
Author(s):  
Song Zhang ◽  
Tingting Wang ◽  
Ziyu Zhang ◽  
Jun Li ◽  
Rong Tu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Oxidation Behavior ◽  
X Ray Diffraction ◽  
X Ray ◽  
Atomic Force ◽  
Transmission Electron ◽  
Influence Of Substrate

Direct-current magnetron sputtering (DCMS) was applied to prepare vanadium (V) films on Si substrate. The influence of substrate temperature (Ts) and target–substrate distance (Dt–s) on phase structure and surface morphology of V films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscope (AFM) and transmission electron microscopy (TEM). The results show that the crystallinity of the V films increases with increasing Ts and decreasing Dt–s. The film deposited at Ts = 400 °C and Dt–s = 60 mm exhibits the best crystallinity and <111> preferred orientation with a regular tetrahedral surface morphology. Oxidation behavior of the V thin films has also been studied by X-ray photoelectron spectroscopy (XPS).

Synthesis and Properties of GaN Nanostructures

2005 ◽  
Vol 475-479 ◽  
pp. 3367-3370
Author(s):  
Hong-Lei Ma ◽  
Cheng Shan Xue ◽  
Ying Ge Yang ◽  
Hui Zhao Zhang ◽  
Jin Ma ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Hexagonal Wurtzite Structure ◽  
X Ray Diffraction ◽  
High Quality ◽  
One Dimensional ◽  
X Ray ◽  
Gan Nanowires ◽  
Transmission Electron ◽  
Morphology And Structure ◽  
Scanning Electron

One-dimensional GaN nanostructure films were successfully synthesized by the recently developed sputtering post-nitridation technique. The morphology and structure of GaN nanowires are investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), and scanning electron microscopy (SEM). The results indicate that the crystalline GaN nanostructures have a hexagonal wurtzite structure, and there is not any other phase such as Ga2O3 or Ga in the specimen. It also confirms that high quality crystal was obtained in the resulting sample due to the lattice defects decreased and the crystallinity improved in the process of nitridation at high temperature. The growth mechanism of the GaN nanostructures is briefly discussed.

Structural and Optical Properties of Ge Nanocrystals Embedded in Al2O3

2008 ◽  
Vol 8 (2) ◽  
pp. 572-576 ◽  
Author(s):  
P. Caldelas ◽  
A. G. Rolo ◽  
A. Chahboun ◽  
S. Foss ◽  
S. Levichev ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Optical Properties ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Transmission Electron ◽  
Xrd Techniques ◽  
Ge Nanocrystals

Ge nanocrystals (NCs) embedded in aluminum oxide were grown by RF-magnetron sputtering. Raman, high resolution transmission electron microscopy (HRTEM), selected area diffraction (SAD), and X-ray diffraction (XRD) techniques confirmed good cristallinity of the NCs from samples annealed at 800 °C. The average NC size was estimated to be around 7 nm. Photoluminescence (PL) measurements show an emission related to the NCs. The temperature dependence of the PL confirms the confinement phenomenon in the Ge NCs.

scholarly journals Surface Stoichiometry and Depth Profile of Tix-CuyNz Thin Films Deposited by Magnetron Sputtering

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3191
Author(s):  
Arun Kumar Mukhopadhyay ◽  
Avishek Roy ◽  
Gourab Bhattacharjee ◽  
Sadhan Chandra Das ◽  
Abhijit Majumdar ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Relative Composition ◽  
Transmission Electron ◽  
Deposited Film ◽  
Deposited Films

We report the surface stoichiometry of Tix-CuyNz thin film as a function of film depth. Films are deposited by high power impulse (HiPIMS) and DC magnetron sputtering (DCMS). The composition of Ti, Cu, and N in the deposited film is investigated by X-ray photoelectron spectroscopy (XPS). At a larger depth, the relative composition of Cu and Ti in the film is increased compared to the surface. The amount of adventitious carbon which is present on the film surface strongly decreases with film depth. Deposited films also contain a significant amount of oxygen whose origin is not fully clear. Grazing incidence X-ray diffraction (GIXD) shows a Cu3N phase on the surface, while transmission electron microscopy (TEM) indicates a polycrystalline structure and the presence of a Ti3CuN phase.

scholarly journals Synthesis of Ce1−xPdxO2−δ Solid Solution in Molten Nitrate

Catalysts ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 640
Author(s):  
Hideaki Sasaki ◽  
Keisuke Sakamoto ◽  
Masami Mori ◽  
Tatsuaki Sakamoto
Keyword(s):  
Electron Microscopy ◽  
Solid Solution ◽  
Solid Solutions ◽  
Photoelectron Spectroscopy ◽  
Synthesis Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Co Precipitation ◽  
Ionic States

CeO2-based solid solutions in which Pd partially substitutes for Ce attract considerable attention, owing to their high catalytic performances. In this study, the solid solution (Ce1−xPdxO2−δ) with a high Pd content (x ~ 0.2) was synthesized through co-precipitation under oxidative conditions using molten nitrate, and its structure and thermal decomposition were examined. The characteristics of the solid solution, such as the change in a lattice constant, inhibition of sintering, and ionic states, were examined using X-ray diffraction (XRD), scanning electron microscopy–energy-dispersive X-ray spectroscopy (SEM−EDS), transmission electron microscopy (TEM)−EDS, and X-ray photoelectron spectroscopy (XPS). The synthesis method proposed in this study appears suitable for the easy preparation of CeO2 solid solutions with a high Pd content.

scholarly journals Aluminum Nitride-Silicon Carbide Alloy Crystals Grown on SiC Substrates by Sublimation

2005 ◽  
Vol 10 ◽  
Author(s):  
Z. Gu ◽  
L. Du ◽  
J.H. Edgar ◽  
E.A. Payzant ◽  
L. Walker ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
X Ray Diffraction ◽  
Original Source ◽  
X Ray ◽  
Alloy Crystal ◽  
Transmission Electron ◽  
Crystal Substrate ◽  
Vapor Distribution ◽  
Uniform Composition

AlN-SiC alloy crystals, with a thickness greater than 500 µm, were grown on 4H- and 6H-SiC substrates from a mixture of AlN and SiC powders by the sublimation-recondensation method at 1860-1990 °C. On-axis SiC substrates produced a rough surface covered with hexagonal grains, while 6H- and 4H- off-axis SiC substrates with different miscut angles (8° or 3.68°) formed a relatively smooth surface with terraces and steps. The substrate misorientation ensured that the AlN-SiC alloy crystals grew two dimensionally as identified by scanning electron microscopy (SEM). X-ray diffraction (XRD) and transmission electron microscopy (TEM) confirmed that the AlN-SiC alloys had the wurtzite structure. Electron probe microanalysis (EPMA) and x-ray photoelectron spectroscopy (XPS) demonstrated that the resultant alloy crystals had non-stoichiometric ratios of Al:N and Si:C and a uniform composition throughout the alloy crystal from the interface to the surface. The composition ratio of Al:Si of the alloy crystals changed with the growth temperature, and differed from the original source composition, which was consistent with the results predicted by thermodynamic calculation of the solid-vapor distribution of each element. XPS detected the bonding between Si-C, Si-N, Si-O for the Si 2p spectra. The dislocation density decreased with the growth, which was lower than 106 cm−2 at the alloy surface, more than two orders of magnitude lower compared to regions close to the crystal/substrate interface, as determined by TEM.

scholarly journals Synthesis of Three-Dimensional Fe3O4/Graphene Aerogels for the Removal of Arsenic Ions from Water

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
Yan Ye ◽  
Da Yin ◽  
Bin Wang ◽  
Qingwen Zhang
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
3D Structure ◽  
Three Dimensional ◽  
X Ray Diffraction ◽  
X Ray ◽  
Graphene Aerogels ◽  
Transmission Electron ◽  
Potential Applications ◽  
Removal Of Arsenic

We report the synthesis of three-dimensional Fe3O4/graphene aerogels (GAs) and their application for the removal of arsenic (As) ions from water. The morphology and properties of Fe3O4/GAs have been characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and superconducting quantum inference device. The 3D nanostructure shows that iron oxide nanoparticles are decorated on graphene with an interconnected network structure. It is found that Fe3O4/GAs own a capacity of As(V) ions adsorption up to 40.048 mg/g due to their remarkable 3D structure and existence of magnetic Fe3O4nanoparticles for separation. The adsorption isotherm matches well with the Langmuir model and kinetic analysis suggests that the adsorption process is pseudo-second-ordered. In addition to the excellent adsorption capability, Fe3O4/GAs can be easily and effectively separated from water, indicating potential applications in water treatment.

scholarly journals Microwave-assisted preparation of ZnS and ZnSe nanocrystals with different morphologies for photodegradation process of organic dyes

2019 ◽  
Author(s):  
Katarzyna Matras-Postolek ◽  
A. Zaba ◽  
S. Sovinska ◽  
D. Bogdal
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Organic Dyes ◽  
Zinc Sulphide ◽  
Conventional Heating ◽  
Bet Surface Area ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Vis Spectroscopy

Zinc sulphide (ZnS) and zinc selenide (ZnSe) and manganese-doped and un-doped with different morphologies from 1D do 3D microflowers were successfully fabricated in only a few minutes by solvothermal reactions under microwave irradiation. In order to compare the effect of microwave heating on the properties of obtained  nanocrystals, additionally the synthesis under conventional heating was conducted additionally in similar conditions. The obtained nanocrystals were systematically characterized in terms of structural and optical properties using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), diffuse reflectance UV-Vis spectroscopy (DR UV-Vis), Fourier-transform infrared spectroscopy (FT-IR), photoluminescence spectroscopy (PL), X-ray photoelectron spectroscopy (XPS) and Brunauer-Emmett-Teller (BET) surface area analysis. The photocatalytic activity of ZnSe, ZnS, ZnS:Mn and ZnSe:Mn nanocrystals with different morphologies was evaluated by the degradation of methyl orange (MO) and Rhodamine 6G (R6G), respectively. The results show that Mn doped NCs samples had higher coefficient of degradation of organic dyes under ultraviolet irradiation (UV).

Synthesis and characterization of homogeneous lead-substituted tin oxide with the (110) face of rutile structure

2000 ◽  
Vol 15 (10) ◽  
pp. 2076-2079
Author(s):  
Chika Nozaki ◽  
Takashi Yamada ◽  
Kenji Tabata ◽  
Eiji Suzuki
Keyword(s):  
Electron Microscopy ◽  
Tin Oxide ◽  
Photoelectron Spectroscopy ◽  
Synthesis And Characterization ◽  
X Ray Diffraction ◽  
Rutile Structure ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Electron

Synthesis of a rutile-type lead-substituted tin oxide with (110) face was investigated. The characterization was performed by x-ray diffraction, scanning electron microscopy, transmission electron microscopy, energy dispersive x-ray spectroscopy, infrared spectroscopy, x-ray photoelectron spectroscopy, and Brunauer–Emmett–Teller surface area measurements. The homogeneous rutile-type lead-substituted tin oxide was obtained until 4.1 mol% of tin was substituted with lead. The surface of obtained oxide had a homogeneously lead-substituted (110) face.

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