Hydrogenated Nanocrystalline Silicon based Solar Cell with 13.6% Stable Efficiency

2012 ◽  
Vol 1426 ◽  
pp. 33-38 ◽  
Author(s):  
Guozhen Yue ◽  
Baojie Yan ◽  
Laura Sivec ◽  
Tining Su ◽  
Yan Zhou ◽  
...  
Keyword(s):  
Solar Cells ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Nanocrystalline Silicon ◽  
Short Circuit Current Density ◽  
Buffer Layers ◽  
Very High Frequency ◽  
Hydrogen Dilution ◽  
Silicon Based ◽  
Junction Structure

ABSTRACTMulti-junction solar cells incorporating hydrogenated nanocrystalline silicon (nc-Si:H) exhibit a high current capability and low light-induced degradation. In this paper, we report our recent progress in developing nc-Si:H solar cells using a modified very-high-frequency glow discharge technique. We achieved a short-circuit current density >30 mA/cm2and 10.6% conversion efficiency from single-junction solar cells. Using the improved nc-Si:H cells in an a-Si:H/nc-Si:H/nc-Si:H triple-junction structure, we attained initial and stabilized efficiencies of 13.9% and 13.6%, respectively. Issues related to improving material properties and device structures are addressed. Besides using the conventional techniques, such as hydrogen dilution profiling, optimized Ag/ZnO back reflector, and buffer layers, we found that compensation from Boron and Oxygen micro-doping is also critical in obtaining the above achievements.

EFFECTS OF INTERELECTRODE SPACING ON THE PROPERTIES OF MICROCRYSTALLINE SILICON ABSORBER AND SOLAR CELLS

2012 ◽  
Vol 1426 ◽  
pp. 105-110
Author(s):  
Bill Nemeth ◽  
Xiaodan Zhang ◽  
Yanfa Yan ◽  
Qi Wang
Keyword(s):  
Solar Cells ◽  
Growth Parameters ◽  
Short Circuit ◽  
Chemical Vapor ◽  
Short Circuit Current ◽  
Precursor Chemistry ◽  
Short Circuit Current Density ◽  
Microcrystalline Silicon ◽  
Very High Frequency ◽  
Si Films

ABSTRACTWe study the effect of the spacing between electrodes in very high frequency plasma enhanced chemical vapor deposition on the properties of microcrystalline silicon films and their related n-i-psolar cells. We vary the spacing from 0.2 to 1.0 cm to deposit microcrystalline silicon at 67.8 MHz while maintaining other growth parameters. The spacing between the electrodes significantly changes the plasma conditions, which govern film precursor chemistry as well as introduce etching and ion bombardment to the film; thereby, influencing nucleation and growth of the microcrystalline Si films. The resulting films were characterized by UV-Vis spectrometry, atomic force microscopy, X-ray diffraction, and transmission electron microscopy. We found that deposition rate decreases, while surface roughness and short circuit current density increase with smaller spacing.

High Efficiency Hydrogenated Nanocrystalline Silicon Solar Cells Deposited at High Rates

2010 ◽  
Vol 1245 ◽  
Author(s):  
Guozhen Yue ◽  
Laura Sivec ◽  
Baojie Yan ◽  
Jeff Yang ◽  
Subhendu Guha
Keyword(s):  
Solar Cells ◽  
Triple Junction ◽  
High Efficiency ◽  
Nanocrystalline Silicon ◽  
Active Area ◽  
Very High Frequency ◽  
Area Efficiency ◽  
Hydrogen Dilution ◽  
Back Reflectors ◽  
Junction Structure

AbstractWe report recent progress on hydrogenated nanocrystalline silicon (nc-Si:H) solar cells prepared at different deposition rates. The nc-Si:H intrinsic layer was deposited, using a modified very high frequency (MVHF) glow discharge technique, on Ag/ZnO back reflectors (BRs). The nc-Si:H material quality, especially the evolution of the nanocrystallites, was optimized using hydrogen dilution profiling. First, an initial active-area efficiency of 10.2% was achieved in a nc-Si:H single-junction cell deposited at ~5 Å/s. Using the improved nc-Si:H cell, we obtained 14.5% initial and 13.5% stable active-area efficiencies in an a-Si:H/nc-Si:H/nc-Si:H triple-junction structure. Second, we achieved a stabilized total-area efficiency of 12.5% using the same triple-junction structure but with nc-Si:H deposited at ~10 Å/s; the efficiency was measured at the National Renewable Energy Laboratory (NREL). Third, we developed a recipe using a shorter deposition time and obtained initial 13.0% and stable 12.7% active-area efficiencies for the same triple-junction design.

Current Transport in Cu(In,Ga)S2 Based Solar Cells with High Open Circuit Voltage - Bulk vs. Interface

2009 ◽  
Vol 1165 ◽  
Author(s):  
Saoussen Merdes ◽  
Benjamin Johnson ◽  
Rodrigo Sáez-Araoz ◽  
Ahmed Ennaoui ◽  
Joachim Klaer ◽  
...  
Keyword(s):  
Solar Cells ◽  
Photoelectron Spectroscopy ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Buffer Layers ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Voltage Dependent

AbstractCu(In,Ga)S2 thin films prepared by rapid thermal sulfurization of metallic precursors yielded solar cells with efficiencies reaching 12.9% [1]. A good short circuit current density was observed together with open circuit voltages up to 850 mV. However, the fill factor was close to, but typically did not exceed 70%. In this contribution we report on the role of junction formation by chemical bath deposition on these parameters. Concentrations in the bath and deposition times were varied. A comparison is made between CdS and Zn(S,O) buffer layers. The influence of the incorporated gallium on surface properties was investigated by ultraviolet photoelectron spectroscopy (UPS) for the valence band edge and near edge X-ray absorption fine structure (NEXAFS) for the conduction band edge. Even in our best cell (13.1%) the activation energy of the saturation current is found to be still smaller than the band gap. High diode ideality factors and voltage dependent current collection prevent higher fill factors.

Determining the exciton diffusion length of copper phthalocyanine in operating planar-heterojunction organic solar cells

2020 ◽  
Vol 89 (3) ◽  
pp. 30201 ◽  
Author(s):  
Xi Guan ◽  
Shiyu Wang ◽  
Wenxing Liu ◽  
Dashan Qin ◽  
Dayan Ban
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
Diffusion Length ◽  
Copper Phthalocyanine ◽  
Short Circuit ◽  
Thick Layer ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Exciton Diffusion ◽  
Exciton Diffusion Length

Organic solar cells based on planar copper phthalocyanine (CuPc)/C60 heterojunction have been characterized, in which a 2 nm-thick layer of bathocuproine (BCP) is inserted into the CuPc layer. The thin layer of BCP allows hole current to tunnel it through but blocks the exciton diffusion, thereby altering the steady-state exciton profile in the CuPc zone (zone 1) sandwiched between BCP and C60. The short-circuit current density (JSC) of device is limited by the hole-exciton scattering effect at the BCP/CuPc (zone 1) interface. Based on the variation of JSC with the width of zone 1, the exciton diffusion length of CuPc is deduced to be 12.5–15 nm. The current research provides an easy and helpful method to determine the exciton diffusion lengths of organic electron donors.

scholarly journals The Influence of the Thickness of Compact TiO2 Electron Transport Layer on the Performance of Planar CH3NH3PbI3 Perovskite Solar Cells

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3295
Author(s):  
Andrzej Sławek ◽  
Zbigniew Starowicz ◽  
Marek Lipiński
Keyword(s):  
Solar Cells ◽  
Electron Transport ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Perovskite Solar Cells ◽  
Precursor Solution ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Transport Layer ◽  
Electron Transport Layer

In recent years, lead halide perovskites have attracted considerable attention from the scientific community due to their exceptional properties and fast-growing enhancement for solar energy harvesting efficiency. One of the fundamental aspects of the architecture of perovskite-based solar cells (PSCs) is the electron transport layer (ETL), which also acts as a barrier for holes. In this work, the influence of compact TiO2 ETL on the performance of planar heterojunction solar cells based on CH3NH3PbI3 perovskite was investigated. ETLs were deposited on fluorine-doped tin oxide (FTO) substrates from a titanium diisopropoxide bis(acetylacetonate) precursor solution using the spin-coating method with changing precursor concentration and centrifugation speed. It was found that the thickness and continuity of ETLs, investigated between 0 and 124 nm, strongly affect the photovoltaic performance of PSCs, in particular short-circuit current density (JSC). Optical and topographic properties of the compact TiO2 layers were investigated as well.

scholarly journals CdTe-Based Thin Film Solar Cells: Past, Present and Future

Energies ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1684
Author(s):  
Alessandro Romeo ◽  
Elisa Artegiani
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Early Years ◽  
Solar Cell Efficiency ◽  
Cell Efficiency

CdTe is a very robust and chemically stable material and for this reason its related solar cell thin film photovoltaic technology is now the only thin film technology in the first 10 top producers in the world. CdTe has an optimum band gap for the Schockley-Queisser limit and could deliver very high efficiencies as single junction device of more than 32%, with an open circuit voltage of 1 V and a short circuit current density exceeding 30 mA/cm2. CdTe solar cells were introduced at the beginning of the 70s and they have been studied and implemented particularly in the last 30 years. The strong improvement in efficiency in the last 5 years was obtained by a new redesign of the CdTe solar cell device reaching a single solar cell efficiency of 22.1% and a module efficiency of 19%. In this paper we describe the fabrication process following the history of the solar cell as it was developed in the early years up to the latest development and changes. Moreover the paper also presents future possible alternative absorbers and discusses the only apparently controversial environmental impacts of this fantastic technology.

scholarly journals Ultrathin Cu(In,Ga)Se2 Solar Cells with Ag/AlOx Passivating Back Reflector

Energies ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 4268
Author(s):  
Jessica de Wild ◽  
Gizem Birant ◽  
Guy Brammertz ◽  
Marc Meuris ◽  
Jef Poortmans ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Solar Cells ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Electron Microscopic ◽  
Current Increase ◽  
Time Resolved ◽  
Cigs Solar Cells

Ultrathin Cu(In,Ga)Se2 (CIGS) absorber layers of 550 nm were grown on Ag/AlOx stacks. The addition of the stack resulted in solar cells with improved fill factor, open circuit voltage and short circuit current density. The efficiency was increased from 7% to almost 12%. Photoluminescence (PL) and time resolved PL were improved, which was attributed to the passivating properties of AlOx. A current increase of almost 2 mA/cm2 was measured, due to increased light scattering and surface roughness. With time of flight—secondary ion mass spectroscopy, the elemental profiles were measured. It was found that the Ag is incorporated through the whole CIGS layer. Secondary electron microscopic images of the Mo back revealed residuals of the Ag/AlOx stack, which was confirmed by energy dispersive X-ray spectroscopy measurements. It is assumed to induce the increased surface roughness and scattering properties. At the front, large stains are visible for the cells with the Ag/AlOx back contact. An ammonia sulfide etching step was therefore applied on the bare absorber improving the efficiency further to 11.7%. It shows the potential of utilizing an Ag/AlOx stack at the back to improve both electrical and optical properties of ultrathin CIGS solar cells.

scholarly journals Effects of Different Doping Ratio of Cu Doped CdS on QDSCs Performance

2015 ◽  
Vol 2015 ◽  
pp. 1-4
Author(s):  
Xiaojun Zhu ◽  
Xiaoping Zou ◽  
Hongquan Zhou
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Photoelectric Conversion Efficiency ◽  
Photoelectric Conversion ◽  
Sensitized Solar Cells ◽  
Doping Ratio

We use the successive ionic layer adsorption and reaction (SILAR) method for the preparation of quantum dot sensitized solar cells, to improve the performance of solar cells by doping quantum dots. We tested the UV-Vis absorption spectrum of undoped CdS QDSCs and Cu doped CdS QDSCs with different doping ratios. The doping ratios of copper were 1 : 100, 1 : 500, and 1 : 1000, respectively. The experimental results show that, under the same SILAR cycle number, Cu doped CdS quantum dot sensitized solar cells have higher open circuit voltage, short circuit current density photoelectric conversion efficiency than undoped CdS quantum dots sensitized solar cells. Refinement of Cu doping ratio are 1 : 10, 1 : 100, 1 : 200, 1 : 500, and 1 : 1000. When the proportion of Cu and CdS is 1 : 10, all the parameters of the QDSCs reach the minimum value, and, with the decrease of the proportion, the short circuit current density, open circuit voltage, and the photoelectric conversion efficiency are all increased. When proportion is 1 : 500, all parameters reach the maximum values. While with further reduction of the doping ratio of Cu, the parameters of QDSCs have a decline tendency. The results showed that, in a certain range, the lower the doping ratio of Cu, the better the performance of quantum dot sensitized solar cell.

scholarly journals SCAPS Simulation on P3HT:Graphene Nanocomposites Based Bulk-Heterojunction Organic Solar Cells

2019 ◽  
Vol 9 (1) ◽  
pp. 28
Author(s):  
Nur Shakina Mohd Shariff ◽  
Puteri Sarah Mohamad Saad ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
Fill Factor ◽  
Bulk Heterojunction ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Simulation Software ◽  
Capacitance Voltage

There has been an increasing interest towards organic solar cells after the discovery of conjugated polymer and bulk-heterojunction concept. Eventhough organic solar cells are less expensive than inorganic solar cells but the power conversion energy is still considered low. The main objective of this research is to investigate the effect of the P3HT’s thickness and concentration towards the efficiency of the P3HT:Graphene solar cells. A simulation software that is specialize for photovoltaic called SCAPS is used in this research to simulate the effect on the solar cells. The solar cell’s structure will be drawn inside the simulation and the parameters for each layers is inserted. The result such as the open circuit voltage (Voc), short circuit current density (Jsc), fill factor (FF), efficiency (η), capacitance-voltage (C-V) and capacitance-frequency (C-f) characteristic will be calculated by the software and all the results will be put into one graph.

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