Heteroepitaxial growth of ZnO films on Gd3Ga5O12 garnet substrates

2012 ◽  
Vol 1394 ◽  
Author(s):  
Yosuke Ono ◽  
Hiroaki Matsui ◽  
Hitoshi Tabata
Keyword(s):  
Single Phase ◽  
Laser Deposition ◽  
Zno Films ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Out Of Plane ◽  
Sharp Interfaces

ABSTRACTThis study focused on structural and optical properties of ZnO films grown epitaxially on Gd3Ga5O12 substrates. ZnO films (a = 3.2439 Å and c = 5.2036 Å) were deposited on the (001) and (111) planes of Gd3Ga5O12 (GGG: a = 12.383 Å) garnet substrates by a pulsed laser deposition method. From out-of-plane and in-plane X-ray diffraction measurements, the obtained ZnO films showed a single phase with the (0001) orientation on the GGG (001) and (111) substrates. The epitaxial relations between the ZnO film and GGG (001) substrate were [10-10] ZnO ‖ [100] GGG and [10-10] ZnO ‖ [010] GGG, while the epitaxial relations between the ZnO film and GGG (111) substrate were [10-10] ZnO ‖ [11-2] GGG ±21°. Furthermore, transmittance electron microscopy revealed sharp interfaces between ZnO films and GGG substrates. From photoluminescent spectra, the ZnO films showed donor bound emissions superimposed with free excitons at a low temperature of 10 K.

scholarly journals Origin of Difference in Photocatalytic Activity of ZnO (002) Grown on a- and c-Face Sapphire

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Guoqiang Li ◽  
Bingyang Sun ◽  
Yali Wang ◽  
Zhou Wu ◽  
Weifeng Zhang
Keyword(s):  
Photocatalytic Activity ◽  
Pulsed Laser ◽  
Contact Angle Measurement ◽  
Angle Measurement ◽  
Laser Deposition ◽  
Surface Conductance ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Zno Film ◽  
X Ray

The oriented (002) ZnO films were grown on a- and c-face sapphire by pulsed laser deposition. The X-ray diffraction analysis revealed that the oriented (002) ZnO films were epitaxially grown on the substrate successfully. The sample on a-face sapphire had higher crystal quality. However, the photocatalytic activity for Rhodamine B degradation of ZnO film on c-face sapphire was higher than that on a-face sapphire. The Raman spectrum and XPS analysis suggested that the sample on a-face sapphire had higher concentration of defects. The result of the contact angle measurement revealed that the sample on c-face sapphire had higher surface energy. And the investigation of the surface conductance implied that the higher light conductance was helpful for the photocatalytic activity.

The Structural and Optical Properties of(Cu, Al):ZnO Films

2013 ◽  
Vol 641-642 ◽  
pp. 547-550 ◽  
Author(s):  
Ying Xiang Yang ◽  
Hong Lin Tan ◽  
Cheng Lin Ni ◽  
Chao Xiang
Keyword(s):  
Optical Properties ◽  
Optical Band Gap ◽  
Sol Gel ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Grain Sizes ◽  
Doped Zno

Un-doped and (Cu, Al)-doped ZnO thin films were prepared by sol-gel spin coating technique on glass substrate. The effect of(Cu, Al)incorporation on the structural, morphological and optical properties of the Zinc oxide (ZnO)film was investigated by means of X-ray diffraction, scanning electron microscopy and UV-vis spectrophotometer. It has been found that the grain sizes, Optical band gap and the preferred orientation growth of (002) plane were decreased with increasing of (Cu, Al) dopants amount in ZnO films.

Research on the Experiment of ZnO Thin Film by Pulsed Laser Deposition

2012 ◽  
Vol 476-478 ◽  
pp. 2379-2383
Author(s):  
Qiang Ke ◽  
Yi Fan Wang ◽  
Ju Ju Hu
Keyword(s):  
Laser Deposition ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Axis Orientation ◽  
X Ray ◽  
Atomic Force ◽  
Experiment Method ◽  
Optimized Conditions ◽  
Substrate Temperatures

Using experiment method, ZnO films are prepared at various substrate temperatures, annealing temperatures and oxygen pressures. The films are examined by X-ray diffraction, atomic force microscope. Through researching the structural and optical properties of ZnO films, optimized conditions for growing ZnO films are obtained. The results suggest that high quality ZnO films with high c-axis orientation can be prepared by pulse laser deposition.

Colossal Magnetoresistance in Thick La0.7Ca0.3MnO3 Films

1995 ◽  
Vol 384 ◽  
Author(s):  
Randolph E. Treece ◽  
P. Dorsey ◽  
M. Rubinstein ◽  
J. M. Byers ◽  
J. S. Horwitz ◽  
...  
Keyword(s):  
Colossal Magnetoresistance ◽  
Single Phase ◽  
Laser Deposition ◽  
Orthorhombic Structure ◽  
X Ray Diffraction ◽  
Post Deposition Annealing ◽  
X Ray ◽  
Mr Effect ◽  
Deposited Films ◽  
Post Deposition

ABSTRACTThick films (0.6 and 2.0 μm) of the colossal magnetoresistance (CMR) material, La0.7Ca0.3MnO3 (LCMO), have been grown by pulsed laser deposition (PLD). The films were grown from single-phase LCMO targets in 100 mTorr 02 pressures and the material deposited on (100) LaAlO3 substrates at deposition temperatures of 800°C. The deposited films were characterized by X-ray diffraction (XRD), magnetic field-dependent resistivity, and Rutherford backscattering spectroscopy (RBS). The LCMO films were shown by XRD to adopt an orthorhombic structure. Brief post-deposition annealing led to ~50,000% and ~12,000% MR effect in the 0.6 μm and 2.0 μm films, respectively.

Structural Properties Of Co/Re Superlattices

1991 ◽  
Vol 238 ◽  
Author(s):  
Y. Huai ◽  
R. W. Cochrane ◽  
Y. Shi ◽  
H. E. Fischer ◽  
M. Sutton
Keyword(s):  
Structural Disorder ◽  
Multilayer Films ◽  
Film Plane ◽  
X Ray Diffraction ◽  
X Ray ◽  
Bilayer Films ◽  
Out Of Plane ◽  
Reflectivity Data ◽  
Sharp Interfaces ◽  
Good Agreement

ABSTRACTThe structures of equal-thickness Co/Re multilayer films and several Co/Re bilayer films have been investigated by X-ray diffraction at low and high angles. Analysis of low-angle reflectivity data from bilayer films indicates that interfacial intermixing is limited to three monolayers and that the two interfacial configurations are different. The high-angle X-ray diffraction data show that multilayer films have coherent interfaces and a highly textured structure with hep [002] orientations normal to the film plane for periods 21 Å ≤ Λ ≤220 Å. Detailed structures have been determined by fitting the X-ray spectra to calculated ones using a trapezoidal model. The results indicate that samples with 42 Å≤ Λ ≤220 Å have relatively sharp interfaces, in good agreement with the bilayer results. In addition, an out-of-plane expansion of the Co (002) layer is observed in samples with large Λ and results from structural disorder leading to a reduced atomic density. For Λ <21 Å the interfaces arise from the rougher surfaces of the deposited layers.

Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 123-125 ◽  
pp. 375-378 ◽  
Author(s):  
Ram Prakash ◽  
Shalendra Kumar ◽  
Chan Gyu Lee ◽  
S.K. Sharma ◽  
Marcelo Knobel ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Fe Doping ◽  
Full Width ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

Properties of Nano-ZnO Films Deposited by RF Magnetron Sputtering for SAW Biosensors

2011 ◽  
Vol 418-420 ◽  
pp. 293-296
Author(s):  
Qiu Yun Fu ◽  
Peng Cheng Yi ◽  
Dong Xiang Zhou ◽  
Wei Luo ◽  
Jian Feng Deng
Keyword(s):  
Magnetron Sputtering ◽  
Deposition Time ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Nano Zno ◽  
Axis Orientation ◽  
X Ray

Abstract. In this article, nano-ZnO films were deposited on SiO2/Si (100) substrates by RF (radio frequency) magnetron sputtering using high purity (99.99%) ZnO target. The effects of deposition time and annealing temperature have been investigated. XRD (X-ray diffraction) and FSEM (Field Emission Scanning Electron Microscopy) were employed to characterize the quality of the films. The results show that the ZnO film with thickness of 600nm annealed at 900°C has higher quality of both C-axis orientation and crystallization. And for the Zone film with thickness of 300nm annealed at 850°C, the quality of both C-axis orientation and crystallization is higher than that annealed at 900°C and 950°C.

scholarly journals Growth and Characterization of BxGa1−xN on 6H-SiC (0001) by Movpe

1999 ◽  
Vol 4 (S1) ◽  
pp. 429-434 ◽  
Author(s):  
C. H. Wei ◽  
Z. Y. Xie ◽  
J. H. Edgar ◽  
K. C. Zeng ◽  
J. Y. Lin ◽  
...  
Keyword(s):  
Single Phase ◽  
Band Edge Emission ◽  
Reactant Ratio ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Edge Emission ◽  
X Ray ◽  
Two Phases

Boron was incorporated into GaN in order to determine its limits of solubility, its ability of reducing the lattice constant mismatch with 6H-SiC, as well as its effects on the structural and optical properties of GaN epilayers. BxGa1−xN films were deposited on 6H-SiC (0001) substrates at 950 °C by low pressure MOVPE using diborane, trimethylgallium, and ammonia as precursors. A single phase alloy with x=0.015 was successfully produced at a gas reactant B/Ga ratio of 0.005. Phase separation into pure GaN and BxGa1−xN alloy with x=0.30 was deposited for a B/Ga reactant ratio of 0.01. This is the highest B fraction of the wurtzite structure alloy ever reported. For B/Ga ratio ≥ 0.02, no BxGa1−xN was formed, and the solid solution contained two phases: wurtzite GaN and BN based on the results of Auger and x-ray diffraction. The band edge emission of BxGa1−xN varied from 3.451 eV for x=0 with FWHM of 39.2 meV to 3.465 eV for x=0.015 with FWHM of 35.1 meV. The narrower FWHM indicated that the quality of GaN epilayer was improved with small amount of boron incorporation.

Growth and Characterization of BxGal-xN on 6H-SiC (0001) by MOVPE

1998 ◽  
Vol 537 ◽  
Author(s):  
C. H. Wei ◽  
Z. Y. Xie ◽  
J. H. Edgar ◽  
K. C. Zeng ◽  
J. Y. Lin ◽  
...  
Keyword(s):  
Single Phase ◽  
Band Edge Emission ◽  
Reactant Ratio ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Edge Emission ◽  
X Ray ◽  
Two Phases

AbstractBoron was incorporated into GaN in order to determine its limits of solubility, its ability of reducing the lattice constant mismatch with 6H-SiC, as well as its effects on the structural and optical properties of GaN epilayers. BxGal-xN films were deposited on 6H-SiC (0001) substrates at 950 °C by low pressure MOVPE using diborane, trimethylgallium, and ammonia as precursors. A single phase alloy with x=0.015 was successfully produced at a gas reactant B/Ga ratio of 0.005. Phase separation into pure GaN and BxGal-xN alloy with x=0.30 was deposited for a B/Ga reactant ratio of 0.01. This is the highest B fraction of the wurtzite structure alloy ever reported. For B/Ga ratio ≥ 0.02, no BxGal-xN was formed, and the solid solution contained two phases: wurtzite GaN and BN based on the results of Auger and x-ray diffraction. The band edge emission of BxGal-xN varied from 3.451 eV for x=0 with FWHM of 39.2 meV to 3.465 eV for x=0.015 with FWHM of 35.1 meV. The narrower FWHM indicated that the quality of GaN epilayer was improved with small amount of boron incorporation.

scholarly journals Lead potassium niobate thin films grown by Pulsed Laser Deposition

2016 ◽  
Vol vol1 (1) ◽  
Author(s):  
Billal Allouche ◽  
Yaovi Gagou ◽  
M. El Marssi
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Potassium Niobate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Deposition Parameters ◽  
Out Of Plane

By pulsed laser deposition, lead potassium niobate Pb2KNb5O15 was grown on (001) oriented Gd3Ga5O12 substrate using a platinum buffer layer. The PKN thin films were characterized by X-Ray diffraction and Scanning Electron Microscopy (SEM). The dependence of their structural properties as a function of the deposition parameters was studied. It has been found that the out of plane orientation of PKN film depends on the oxygen pressure used during the growth. Indeed, PKN thin film is oriented [001] for low pressure and is oriented [530] for high pressure. For these two orientations, the crystalline quality of PKN film was determined using omega scans.

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