Inkjet Printing of Electrically Conducting Micron-Wide Lines and Transparent Conducting Films by Edge-Enhanced Twin-Deposition

2012 ◽  
Vol 1529 ◽  
Author(s):  
Vadim Bromberg ◽  
Siyuan Ma ◽  
Timothy J. Singler

ABSTRACTRoll-to-roll manufacturing holds the potential to rapidly and cheaply produce electronic devices in a flexible format as well as to effectively scale up production of emerging nanotechnologies. Developing scalable techniques for the efficient and effective use of solution-processed functional material is a significant factor in realizing the potential of roll-to-roll manufacturing. We present a novel inkjet deposition process developed to rapidly deposit arrays of micron-wide lines of silver nanoparticles for use as an optically transparent and electrically conducting film. The technique involves jetting a controlled number of space-overlapped drops of a dilute nanoparticle silver ink onto a substrate to form a long stable ink rivulet with two parallel and pinned edges. Subsequently, nanoparticles deposit preferentially at the two parallel rivulet edges due to edge-enhanced evaporation of the solvent. The final result is a twin-deposit of parallel continuous nanoparticle lines, each with a characteristic width less than 5μm and height less than 300 nm. The twin lines are separated by a predominantly particle-free region with the spacing between the lines ranging from 100 μm to 600 μm, where the spacing is a function of ink, substrate, and printing conditions. The effect of substrate surface and jetting parameters on nanoparticle line morphology is presented. Arrays of such lines have been printed and evaluated as potential transparent conducting films, showing an effective sheet resistance of ∼5 Ω/□. This edge-enhanced twin-deposition technique has the potential for rapid, material-efficient, and lithography-free patterned deposition of functional material for use in roll-to-roll manufacturing.

1996 ◽  
Vol 426 ◽  
Author(s):  
Mikko Rit ◽  
Timo Asikainen ◽  
Markku Leskelä ◽  
Jarmo Skarp

AbstractOwing to its self-limiting growth mechanism the Atomic Layer Epitaxy (ALE) technique is capable of growing uniform high quality thin films on large area substrates. Therefore, ALE is an attractive choice for depositing transparent electrically conducting films for large area applications, such as solar cells and flat panel displays. In this paper studies on ALE growth of In2O3 and ZnO based transparent conducting thin films will be presented. In2O3, In2O3:Sn and In 2O3:F films were grown at 500 °C and their lowest resistivities were about 3 x 10-3, 2 x 10-3 and 6 x 10-4 Ωcm, respectively. Low temperature (120 - 350 °C) ALE deposition processes were developed for ZnO and ZnO:AI films, the latter having resistivities as low as 8 x 10-4 Ωcm. A straightforward scale-up of the ZnO process from 5 x 5 to 30 x 30 cm 2 substrate size was also demonstrated.


1991 ◽  
Vol 56 (10) ◽  
pp. 2020-2029
Author(s):  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma ◽  
Rudolf Hladina

The authors proposed and treated quantitatively a kinetic model for deposition of epitaxial GaAs layers prepared by reaction of trimethylgallium with arsine in hydrogen atmosphere. The transport of gallium to the surface of the substrate is considered as the controlling process. The influence of the rate of chemical reactions in the gas phase and on the substrate surface on the kinetics of the deposition process is neglected. The calculated dependence of the growth rate of the layers on the conditions of the deposition is in a good agreement with experimental data in the temperature range from 600 to 800°C.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Shalini Menezes ◽  
Anura P. Samantilleke ◽  
Bryon W. Larson

AbstractPairing semiconductors with electrochemical processing offers an untapped opportunity to create novel nanostructures for practical devices. Here we report the results of one such pairing: the in-situ formation of highly-doped, interface-matched, sharp nanocrystalline homojunctions (NHJs) with single step electrodeposition of two copper-indium-selenide (CISe) compounds on flexible foil. It produces a homogenous film, comprising inherently ordered, 3-dimensional interconnected network of pn-CISe NHJs. These CISe NHJs exhibit surprising non-linear emissions, quantized transitions, large carrier mobility, low trap-state-density, long carrier lifetime and possible up-conversion. They facilitate efficient separation of minority carriers, reduce recombination and essentially function like quantum materials. This approach mitigates the material issues and complex fabrication of incumbent nanoscale heterojunctions; it also overcomes the flexibility and scale-up challenges of conventional planar pn junctions. The self-stabilized CISe NHJ film can be roll-to-roll processed in ambient atmosphere, thus providing a promising platform for a range of optoelectronic technologies. This concept exemplified by CISe compounds can be adapted to create nano-scale pn junctions with other inorganic semiconductors.


2009 ◽  
Vol 6 (5) ◽  
pp. 1109-1111 ◽  
Author(s):  
Shingo Masaki ◽  
Hisayuki Nakanishi ◽  
Mutsumi Sugiyama ◽  
Shigefusa F. Chichibu

Vacuum ◽  
2010 ◽  
Vol 85 (2) ◽  
pp. 184-186 ◽  
Author(s):  
Huafu Zhang ◽  
Hanfa Liu ◽  
Chengxin Lei ◽  
Changkun Yuan ◽  
Aiping Zhou

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