Interfacing Ag Nanoparticles with 1D Semiconductor Micro/Nanostructures via Joule Heating for Transfer Printing Nanodevices at Room Ambient

2012 ◽  
Vol 1429 ◽  
Author(s):  
VJ Logeeswaran ◽  
Aaron M. Katzenmeyer ◽  
Mark Triplett ◽  
Matthew Ombaba ◽  
M. Saif Islam
Keyword(s):  
Joule Heating ◽  
Ag Nanoparticles ◽  
Ohmic Contacts ◽  
Electrical Contact ◽  
Electrical Current ◽  
Transfer Printing ◽  
Ambient Conditions ◽  
Particle Deformation ◽  
Au Film ◽  
Self Assembled

ABSTRACTWe describe an experiment to interface and characterize silver nanoparticle (AgNPs) aggregates that are self-assembled and plastically deformable on a thin gold (Au) film deposited on glass substrate. The electrical characterization is done using an electrical nanoprobe attached to a nano-manipulator inside a scanning electron microscope (SEM). Electrical current-voltage (I-V) measurements are made between the electrical nanoprobe in contact with the nanoparticle and the Au film. The Ag nanoparticles have diameters ranging between ~200-800nm and are self-assembled on a thiolated 100nm Au film. Application of a contact force via the nanoprobe even after substantial particle deformation reveals initially a small non-linear current. Upon current annealing through Joule heating, significant improvement in the electrical contact at the AgNP/substrate interface was observed. This is most likely based on bonding of the AgNPs to the Au film after passage of a high current. The need for such an annealing/sintering step will be critical in forming good ohmic contacts at ambient conditions during transfer printing of semiconductor micro/nanopillars.

Numerical Modeling of Surface Temperature Rising on Imperfect Sliding Electrical Contact

2005 ◽  
Author(s):  
Wan-Sik Kim ◽  
Shuangbiao Liu ◽  
Q. Jane Wang ◽  
Mark Asta ◽  
Herbert S. Cheng
Keyword(s):  
Surface Temperature ◽  
Rough Surface ◽  
Joule Heating ◽  
Electrical Contact ◽  
Electrical Current ◽  
Computational Prediction ◽  
Heat Fluxes ◽  
Extreme Condition ◽  
Surface Contact ◽  
Rough Surface Contact

This paper describes a model for numerical prediction of surface temperature rising due to frictional and electrical Joule heating between rough surfaces with discrete and continuous convolution fast Fourier transform (DC-FFT and CC-FFT). Contact resistance in non-conformal rough contact is defined and also surface temperature is simulated with frictional and Joule heating components of heat fluxes in rough surface contact. The computational prediction of temperature rising of sliding rough surface contact with electrical current may facilitate the understanding of imperfect electrical contact (ImPEC) and extreme condition lubrication.

Electrical Contact Characteristics between Silicon Micropillars and Ag Nanoparticles with Controlled Mechanical Load

2012 ◽  
Vol 1429 ◽  
Author(s):  
VJ Logeeswaran ◽  
Mark Triplett ◽  
Daniel Lam ◽  
Emre Yengel ◽  
Heim Grewal ◽  
...  
Keyword(s):  
Ag Nanoparticles ◽  
High Performance ◽  
Mechanical Load ◽  
Electrical Contact ◽  
Test Method ◽  
Transfer Printing ◽  
Glass Substrates ◽  
Current Voltage ◽  
Force Resolution ◽  
Nano Wires

ABSTRACTWe report an experimental investigation on employing Ag nanoparticles to provide electrical and mechanical contacts between transfer-printed semiconductor devices in the shape of micro/nano- wires and pillars. The Ag nanoparticles have diameters ranging between 200-800nm and are assembled on a 200nm Au film deposited on glass substrates. With a customized tool, an ensemble of silicon pillars were brought into contact with the silver (Ag) nanoparticles (AgNPs) by precisely controlling the displacement and applied force (pressure). Current-voltage measurements were done at force resolution of ~0.2N. The test method aims to illuminate the pillar-particle contact mechanism using the nanoparticles as conductive fillers for the next generation of high performance heteroepitaxial device transfer-printing applications.

DC Transport in Self-Assembled 2D Layers of Ag Nanoparticles†

2001 ◽  
Vol 105 (37) ◽  
pp. 8797-8800 ◽  
Author(s):  
Sampaio ◽  
K. C. Beverly ◽  
J. R. Heath
Keyword(s):  
Ag Nanoparticles ◽  
Self Assembled

Construction of solvent-dependent self-assembled porous Ni(ii)-coordinated frameworks as effective catalysts for chemical transformation of CO2

RSC Advances ◽  
2016 ◽  
Vol 6 (109) ◽  
pp. 108010-108016 ◽  
Author(s):  
Zhen Zhou ◽  
Lu Yang ◽  
Yefei Wang ◽  
Cheng He ◽  
Tao Liu ◽  
...  
Keyword(s):  
Catalytic Activity ◽  
Chemical Transformation ◽  
Self Assembly ◽  
Ambient Conditions ◽  
Heterogeneous Catalytic ◽  
Self Assembled

Two types of Ni(ii)-based coordinated frameworks have been solvothermally synthesized via solvent driven self-assembly, showing efficient heterogeneous catalytic activity toward cycloaddition of CO2 with epoxides under ambient conditions.

Reduced Graphene Oxide Supported Ag Nanoparticles: An Efficient Catalyst for CO 2 Conversion at Ambient Conditions

ChemCatChem ◽  
2020 ◽  
Vol 12 (19) ◽  
pp. 4825-4830
Author(s):  
Xiao Zhang ◽  
Kai‐Hong Chen ◽  
Zhi‐Hua Zhou ◽  
Liang‐Nian He
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Ag Nanoparticles ◽  
Ambient Conditions ◽  
Efficient Catalyst ◽  
Reduced Graphene

scholarly journals New Al-Ni-Ge Contacts on GaAs; Their Structure and Electrical Properties

1988 ◽  
Vol 126 ◽  
Author(s):  
Z. Liliental-Weber ◽  
J. Washburn ◽  
C. Musgrave ◽  
E. R. Weber ◽  
R. Zuleeg ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Electrical Contact ◽  
Critical Factor ◽  
Contact Layer ◽  
Auger Spectroscopy ◽  
Semiconductor Surface ◽  
Chemical Cleaning ◽  
Tunneling Mechanism ◽  
Transmission Electron ◽  
Secondary Ion

ABSTRACTThe structure and composition of the recently developed Al-Ni-Ge ohmic contacts to n-GaAs were investigated by transmission electron microscopy combined with secondary ion mass spectroscopy (SIMS) and Auger spectroscopy. The semiconductor/metal-alloy interface of these contacts remain very flat after annealing (500°C, for 1 min - contact resistance 1.4×10−6Ωcm2), in contrast to the widely used Au-Ni-Ge contacts. The metal sequence during deposition is found to be a critical factor in determining the electrical contact properties and the dispersion of the oxide layer on the semiconductor surface after chemical cleaning. Ge doping of the GaAs beneath the contact layer was observed by SIMS, and a tunneling mechanism through the n+GaAs:Ge layer was proposed to explain the ohmic properties of the contacts.

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