Low Temperature Growth of CaTiO3: Pr Phosphor Thin Film on Flexible Substrate by Photo- induced Chemical Solution Process

2012 ◽  
Vol 1454 ◽  
pp. 189-194 ◽  
Author(s):  
Tetsuo Tsuchiya ◽  
Tomohiko Nakajima ◽  
Kentaro Shinoda
Keyword(s):  
Thin Film ◽  
Flexible Substrate ◽  
Solution Process ◽  
Substrate Material ◽  
Nano Particles ◽  
Temperature Growth ◽  
Excimer Lamp ◽  
Metal Organic ◽  
Pet Substrate ◽  
Organic Decomposition

ABSTRACTPreparation of the CaTiO3:Pr (CTO:Pr) phosphor thin film on PET substrate was investigated by using the excimer laser-assisted metal organic decomposition(ELAMOD) and photo reaction of nano-particles (PRNP) process. The effects of the substrate material, starting materials, and UV sources on photoluminescence (PL) were investigated. By using the BaTiO3(BTO) nano-particles buffer layer and the CTO: Pr nano-particles as a starting material, CTO: Pr thin film on the PET substrate was successfully obtained by using the KrF laser and excimer lamp irradiation at 25°C. It was found that excimer lamp irradiation is effective for improving the PL of the films.

Enhancing the Magnetic and Magneto-optical Properties of Praseodymium-substituted Bi-YIG Thin Film on Glass Substrate Prepared by Metal-organic Decomposition

2021 ◽  
Vol 26 (1) ◽  
pp. 14-18
Author(s):  
Viet Dongquoc ◽  
Trinh Nguyen Thi ◽  
Phuoc Cao Van ◽  
Duc Duong Viet ◽  
Ha-Young Ahn ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Glass Substrate ◽  
Metal Organic ◽  
Organic Decomposition

The influence of crystallization route on the Ce-doped Bi2Ti2O7 thin film by metal organic decomposition

2010 ◽  
Vol 494 (1-2) ◽  
pp. 285-288 ◽  
Author(s):  
J.C. Wang ◽  
C.H. Yang ◽  
G.D. Hu ◽  
W.B. Wu ◽  
L. Cheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Organic ◽  
Influence Of Crystallization ◽  
Organic Decomposition

Micro/Nano-Printing of Metal and Nanoparticle Thin Film and its Application to MEMS Device

2020 ◽  
Author(s):  
Arata Kaneko ◽  
Akihiro Mori ◽  
Keisuke Kanada ◽  
Chen Sumin ◽  
Wang Ke
Keyword(s):  
Thin Film ◽  
Inkjet Printing ◽  
Nano Particles ◽  
Bending Test ◽  
Test Results ◽  
Transfer Printing ◽  
Au Film ◽  
Mems Sensor ◽  
Pet Substrate ◽  
Au Thin Film

Abstract This present paper describes some test results about fabrication of micro/nano-structure for MEMS using printing techniques of metal and nanoparticle thin films. Transfer-printing of a bi-layered film of graphene oxide (GO) and Au is processed on a PET substrate. Nano-particles of GO are cast on a micro-ridged poly-dimethyl-siloxane stamp that is previously coated with Au by solution casting. The layer of GO nanoparticles functions as a reinforcing material to strengthen the layered film while the Au thin-film is a matrix that links the GO nanoparticles. The thickness of GO nanoparticles varies with concentration of GO suspension. In the case of thicker coating of GO with an average thickness of 13 nm, the transfer-printing makes the GO/Au bi-layered film form into 50-μm-wide two-dimensional line patterns on the PET substrate. Additionally, transfer-printing of another bi-layered film with a 128 nm thickness fabricates a three-dimensional microstructure of a rectangular-corrugated film on the PET substrate because the entire bi-layered film is transferred from the stamp. The modulus of transfer-printed GO/Au bi-layered film is investigated by a simple bending tests using AFM cantilever. FEM analysis of the bending test results indicates that the mechanical modulus of the GO/Au film is not less than 120 GPa, and this significantly exceeds that of the Au film by itself. The present study also fabricated a capacitive MEMS sensor by a combination of transfer-printing and inkjet printing. Inkjet printing makes GO nanoparticles on the 100-μm-wide comb-like microelectrode, which is previously fabricated by transfer-printing of Au thin film. The fabricated MEMS sensor successfully shows its change of capacitance with relative humidity in the range of 40% to 80%. These results demonstrate that the printing of Au and GO nanoparticles is effective for MEMS fabrication.

A Dielectric Bolometer Behavior of BST Thin Film Prepared by Metal-Organic-Decomposition with Excellent Reproducibility in Thermal Cycling Test

2000 ◽  
Vol 655 ◽  
Author(s):  
Minoru Noda ◽  
Hong Zhu ◽  
Huaping Xu ◽  
Tomonori Mukaigawa ◽  
Kazuhiko Hashimoto ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
High Sensitivity ◽  
Image Sensor ◽  
Voltage Sensitivity ◽  
Ir Detector ◽  
Final Annealing ◽  
Metal Organic ◽  
Bst Thin Film ◽  
Organic Decomposition

AbstractWe have proposed a new type of simple detector pixel circuit and device structure for application of dielectric bolometer mode (DB) of infrared (IR) image sensor. The DB mode has merits such as uncooled room temperature operation, chopperless, low power dissipation, and high-sensitivity. A stable Ba1划xSrxTiO3 (BST) thin film has been successfully developed as a dielectric bolometer material for IR detector by Metal-Organic-Decomposition (MOD) method. The film was prepared on both Pt/Ti/SiO2/Si-bulk and Pt/Ti/NSG/Si3N4/SiO2 membrane structures, where an IR light is detected at the membrane as a change in dielectric constant (ε). So, the important issue for realizing a reliable IR sensor with high-sensitivity has been achieved to have a good thermal stability in ε against change in the detector temperature. XRD patterns and D-E hysteresis curves were measured and revealed that the BST film has a good perovskite structure and shows an adequate ferroelectric loops, especially for final annealing temperature higher than 700 °C. Temperature Coefficient of Dielectric constant (TCD), which decides the IR sensitivity, of the MOD made BST film is about 1 %/K. The reproducibility in ε, namely IR detector capacitance, was found to be very good in temperature ranging from about 10 to 80 °C within a relative change of 2 %. Finally, the stabilities in both the temperature dependence of ε and the output level have been obtained with a fairly large IR detectivity, where voltage sensitivity(Rv) and specific detectivity(D*) were about 1.2 kV/W and 2.9e8 cmHz 1/2/W, respectively.

Electrical Characteristics of the Pt/SBT/TiO2/Si MFIS Structures with Thickness Variation of the SBT Film

2001 ◽  
Vol 666 ◽  
Author(s):  
Ji-Woong Kim ◽  
Kwang-Yong Lee ◽  
Jae-Hoon Choi ◽  
Tae-Sung Oh
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Buffer Layer ◽  
Memory Window ◽  
Switching Behavior ◽  
Thickness Variation ◽  
Electrical Characteristics ◽  
Metal Organic ◽  
Ferroelectric Switching ◽  
Organic Decomposition

ABSTRACTPt/Sr0.85Bi2.4Ta2O9/TiO2/Si structures were prepared with variation of the Sr0.85Bi2.4Ta2O9 (SBT) film thickness for MFIS-FET applications. After depositing TiO2 film of 10 nm thickness by reactive sputtering on Si(100) substrate as a buffer layer, SBT thin film of 210-400 nm thickness was prepared onto it by metal organic decomposition process. Regardless of the SBT film thickness, the Pt/SBT/TiO2/Si structures exhibited clockwise directional hysteresis, indicating well-defined ferroelectric switching behavior of the SBT films. While the memory window of the Pt/SBT/TiO2/Si MFIS structures increased with increasing the SBT film thickness, the maximum capacitance of the Pt/SBT/TiO2/Si MFIS structures decreased with increasing the SBT film thickness. The Pt/SBT(400 nm)/TiO2(10 nm)/Si structure exhibited a memory window of 1.3 V at ±5 V.

Strong Hole Self-Doping in LaMnO3 Thin Film on a-SiO2 Substrate Produced by Metal Organic Decomposition Method

2019 ◽  
Vol 962 ◽  
pp. 17-21 ◽  
Author(s):  
Hiromi Kobori ◽  
Tohru Kitamura ◽  
Toshifumi Taniguchi ◽  
Tetsuo Shimizu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Heat Treatment ◽  
Single Crystal ◽  
Decomposition Method ◽  
Treatment Conditions ◽  
Gas Atmosphere ◽  
Metal Organic ◽  
Temperature Time ◽  
Organic Decomposition

We have studied the strong hole self-doping into LaMnO3(LMO) thin films produced by metal organic decomposition (MOD) method. With different heat treatment conditions, LMO thin films have been prepared by the MOD method in the 100 % O2gas atmosphere. We consider that the excess of O2-ions in LMO thin films induces the strong hole self-doping into LMO ones. The quantity of excess O2-ions in LMO is sensitive to the heat treatment conditions of the LMO production, especially the temperature, time and atmosphere gas. Although LMO single crystal is an antiferromagnetic insulator, LMO thin films we have produced in the 100 % O2gas atmosphere by use of the MOD method shows the properties of ferromagnetic metal.

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