Phosphorous and Boron Incorporation and its Effect on Optical Properties of Ge:H and Si0.01Ge0.99:HFilms Deposited by LF PECVD

2012 ◽  
Vol 1372 ◽  
Author(s):  
Nery Delgadillo ◽  
Andrey Kosarev ◽  
Afonso Torres ◽  
Lancelot Garcia ◽  
Brian Gonzales
Keyword(s):  
Gas Phase ◽  
Secondary Ion Mass Spectrometry ◽  
Solid Phase ◽  
Chemical Vapour ◽  
Low Frequency ◽  
Localized States ◽  
Optical Measurements ◽  
Band Tail ◽  
Frequency Plasma ◽  
Secondary Ion

ABSTRACTDeposition conditions that provided low absorption related to both band tail and deep localized states have been found for both materials Ge:H and Si1YGeY:H. Phosphorous incorporation on Si0.01Ge0.99:H films and boron incorporation on Ge:H films were deposited by low frequency plasma-enhanced chemical vapour deposition (LF PECVD). The phosphorous incorporation in solidphase was observed to preferential with the increase of the doping in the gas phase to 2.5 %, and 2.5% to 4% was observed preferential Si0.01Ge0.99 film, boron incorporation in solid phase increase linearly with the increase of the doping gas phase. The content of solid phase was characterized by Secondary ion mass spectrometry (SIMS) profiling. Hydrogen concentration in the films was determined from Fourier transform infrared spectroscopy (FTIR) and SIMS measurements. Optical measurements provided optical gap, localized states, and band tail. A significant reduction of both band tail and deep localized states were observed at boron incorporation in solid phase = 0.004% on Ge:H films and the same were observed at phosphorous incorporation in solid phase = 0.29% on Si0.01Ge0.99:H films.

Annealing of Pb-Implanted SrTiO3 in The Presence of Water Vapour: A Study Using D218O Labelling

1991 ◽  
Vol 235 ◽  
Author(s):  
J. C. McCallum ◽  
T. W. Simpson ◽  
I. V. Mitchell ◽  
J. Rankin ◽  
L. A. Boatner
Keyword(s):  
Water Vapour ◽  
Rate Increase ◽  
Secondary Ion Mass Spectrometry ◽  
Solid Phase ◽  
Nuclear Reaction Analysis ◽  
Doubly Labelled Water ◽  
Time Resolved ◽  
Depth Profiles ◽  
Conventional Furnace ◽  
Secondary Ion

ABSTRACTWe report new measurements of the regrowth behaviour of Pb-implanted SrTiO3 crystals in the presence of water vapour. Doubly labelled water vapour, D218O, at greater than 95% enrichment in each isotope has been added to the annealing ambient and depth profiles of D and 18O have been obtained from the regrown crystals using secondary ion mass spectrometry (SIMS). The D and 18O content has also been measured by nuclear reaction analysis (NRA) using the reactions D(3He,p)4 He and 18O(p,α)15 N. The crystals were regrown in a conventional furnace under a controlled gas ambient and time-resolved optical reflectivity (TRR) was used to dynamically monitor the regrowth rate during the anneal. An enhancement of the solid-phase epitaxial regrowth rate is observed when water vapour is added to the annealing ambient. This rate increase is accompanied by incorporation of D throughout the regrown layer. 18O is incorporated into the lattice but does not appear to penetrate deep enough to influence the regrowth rate.

Time-Resolved and Post-Irradiation Studies of the Interaction of High-Power Pulsed Microwave Radiation with Silicon

1986 ◽  
Vol 74 ◽  
Author(s):  
R. B. James ◽  
P. R. Bolton ◽  
R. A. Alvarez ◽  
R. E. Valiga ◽  
W. H. Christie
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Surface Region ◽  
Surface Damage ◽  
Threshold Value ◽  
Optical Measurements ◽  
Time Resolved ◽  
Near Surface ◽  
Reflected Power ◽  
Secondary Ion

AbstractWe have measured the microwave-induced damage to the near-surface region of silicon for 1.9-μs pulses at a frequency of 2.856 GHz and a pulse power of up to 7.2 MW. Rectangular samples were irradiated in a test section of WR-284 waveguide that was filled with freon to a pressure of 30 psig. Incident, transmitted and reflected powers were monitored with directional couplers and fast diodes. The results of the time-resolved optical measurements show that the onset of surface damage is accompanied by a large increase in the reflected power. Examination of the irradiated surfaces shows that the degree of damage is greatest near the edges of the samples. Using secondary ion mass spectrometry to profile the implanted As, we find that the microwave pulses can melt the near-surface region of the material for pulse powers exceeding a threshold value.

Low Temperature Epitaxy Of Si/Si1-xGex/Si Multilayers By Low Pressure Rtcvd For Very Thin Soi Applications

1998 ◽  
Vol 533 ◽  
Author(s):  
D.W. McNeill ◽  
D.L. Gay ◽  
X. Lip ◽  
B.M. Armstrong ◽  
H.S. Gamble
Keyword(s):  
Scanning Probe Microscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapour ◽  
High Growth ◽  
Silicon On Insulator ◽  
Ex Situ ◽  
Growth Time ◽  
Oxide Contamination ◽  
Secondary Ion

AbstractThe growth by rapid thermal chemical vapour deposition of Si/Si1-xGex/Si multilayer structures, suitable for thin bond and etch-back silicon-on-insulator fabrication has been investigated. Surface topography was studied by scanning probe microscopy, and layer contamination by secondary ion mass spectrometry. Smooth layers are only achieved at high growth temperatures (>700°C), and when surface oxide contamination is reduced by a combination of ex-situ HF vapour treatment and in-situ high temperature H2 bake. A surface peak-to-peak roughness of 15nm for a Si/Si1-xGex/Si multilayer structure has been achieved by reducing the growth time at 700°C or less. Further improvement is possible, especially if carbon contamination can be reduced.

Evaluation of Segregation in Polycrystalline 10 mol% Yttria Doped Zirconia (10YSZ)

2011 ◽  
Vol 1363 ◽  
Author(s):  
Muhammad Asri Idris ◽  
Janusz Nowotny ◽  
Sean S. Li
Keyword(s):  
Mass Spectrometry ◽  
Gas Phase ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Oxygen Activity ◽  
Concentration Gradients ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

ABSTRACTThe present work reports surface segregation in polycrystalline yttria-stabilised zirconia (cubic) including 10 mol% Y2O3 (10YSZ). The 10YSZ specimen was annealed in the range 1073 K - 1673 K in the gas phase of controlled oxygen activity. The segregation-induced intensity profiles of 89Y, 40Ca, 28Si, 27Al, 133Cs, 197Au and 90Zr was measured using secondary ion mass spectrometry (SIMS). The data obtained show that (i) annealing of 10YSZ results in the formation of segregation-induced concentration gradients of 89Y, 40Ca, 28Si, 27Al and (ii) segregation-induced profiles depend on oxygen activity.

Ohmic Contact Formation Mechanism in the Ge/Pd/N-GaAs System

1989 ◽  
Vol 148 ◽  
Author(s):  
E.D. Marshall ◽  
S.S. Lau ◽  
C.J. Palmstrøm ◽  
T. Sands ◽  
C.L. Schwartz ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Solid Phase ◽  
Cross Sectional ◽  
Ohmic Behavior ◽  
Transmission Electron ◽  
Solid Phase Regrowth ◽  
Ohmic Contact Formation ◽  
Secondary Ion

ABSTRACTAnnealed Ge/Pd/n-GaAs samples utilizing substrates with superlattice marker layers have been analyzed using high resolution backside secondary ion mass spectrometry and cross-sectional transmission electron microscopy. Interfacial compositional and microstructural changes have been correlated with changes in contact resistivity. The onset of good ohmic behavior is correlated with the decomposition of an intermediate epitaxial Pd4(GaAs,Ge2) phase and solid-phase regrowth of Ge-incorporated GaAs followed by growth of a thin Ge epitaxial layer.

Silicon-germanium films deposited by low-frequency plasma-enhanced chemical vapor deposition: Effect of H2 and Ar dilution

2006 ◽  
Vol 21 (1) ◽  
pp. 88-104 ◽  
Author(s):  
A. Kosarev ◽  
A. Torres ◽  
Y. Hernandez ◽  
R. Ambrosio ◽  
C. Zuniga ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Relative Rate ◽  
Low Frequency ◽  
Chemical Vapor ◽  
Optical Measurements ◽  
Conduction Band Edge ◽  
Frequency Plasma

We have studied structure and electrical properties of Si1−YGeY:H films deposited by low-frequency plasma-enhanced chemical vapor deposition over the entire composition range from Y = 0 to Y = 1. The deposition rate of the films and their structural and electrical properties were measured for various ratios of the germane/silane feed gases and with and without dilution by Ar and by H2. Structure and composition was studied by Auger electron spectroscopy (AES), secondary ion mass spectroscopy (SIMS), and Fourier transform infrared (FTIR) spectroscopy. Surface morphology was characterized by atomic force microscopy (AFM). We found that the deposition rate increased with Y, maximizing at Y = 1 without dilution. The relative rate of Ge and Si incorporation is affected by dilution. Hydrogen preferentially bonds to silicon. Hydrogen content decreases for increasing Y. In addition, optical measurements showed that as Y goes for 0 to 1, the Fermi level moves from mid gap to the conduction band edge; i.e., the films become more n-type. No correlation was found between the pre-exponential and the activation energy of conductivity. The behavior of the conductivity γ-factor suggests a local minimum in the density of states at E ≈ 0.33 eV for the films grown with or without H-dilution and E ≈ 0.25 eV for the films with Ar dilution.

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