Annealing Effects on Ta Doped SnO2 Films

2012 ◽  
Vol 1454 ◽  
pp. 245-251
Author(s):  
Junjun Jia ◽  
Yu Muto ◽  
Nobuto Oka ◽  
Yuzo Shigesato
Keyword(s):  
Electrical Resistivity ◽  
Electrical Properties ◽  
Beneficial Effect ◽  
Hall Mobility ◽  
Carrier Density ◽  
Annealing Temperature ◽  
Annealing Effect ◽  
Scattering Mechanism ◽  
Glass Substrates ◽  
Annealing Effects

ABSTRACTTa doped SnO2 (TTO) films prepared on quartz glass substrates at 200 °C were annealed in the air to investigate the annealing effect on the structural, the optical, and the electrical properties. It is shown that the annealing for TTO films resulted in beneficial effect on the electrical resistivity by improving the carrier density and Hall mobility. The lowest resistivity was 1.4 × 10-3Ω cm obtained at 400 °C annealing temperature. The scattering mechanism in TTO films was discussed from the optical and electrical perspectives. The variation in Hall mobility with increasing the annealing temperature may be attributed to the scattering from the ionized and neutral impurities in TTO films.

Thermal Annealing Effect on the Thermal and Electrical Properties of Organic Semiconductor Thin Films

MRS Advances ◽  
2016 ◽  
Vol 1 (22) ◽  
pp. 1637-1643 ◽  
Author(s):  
Xinyu Wang ◽  
Boyu Peng ◽  
Paddy Chan
Keyword(s):  
Thermal Conductivity ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Organic Semiconductor ◽  
Field Effect ◽  
Annealing Temperature ◽  
Waste Heat ◽  
Annealing Effect ◽  
Field Effect Mobility ◽  
Thermal And Electrical Properties

ABSTRACTThe thermal and electrical properties of organic semiconductor are playing critical roles in the device applications especially on the devices with large area. Although the effect may be minor in a single device like field effect transistors, the unwanted waste heat would cause much more severe problems in large-scale devices as the power density will go up significantly. The waste heat would lead to performance degradation or even failure of the devices, and thus a more detailed study on the thermal conductivity and carrier mobility of the organic thin film would be beneficial to predict the limits of the device or design a thermally stable device. Here we explore the thermal annealing effect on the thermal and electrical properties of the small molecule organic semiconductor, dinaphtho[2,3-b:2’,3’-f]thieno[3,2-b]thiophene (DNTT). After the post deposition thermal annealing, the grain size of the film increases and in-plane crystallinity improves while cross-plane crystallinity keeps relatively constant. We demonstrated the cross-plane thermal conductivity is independent of the thermal annealing temperature and high annealing temperature will reduce the space-charge-limited current (SCLC) mobility. When the annealing temperature increase from 24 °C to 140 °C, the field effect mobility shows a gradual increase while the threshold voltage shifts from positive to negative. The different dependence of the SCLC mobility and field effect mobility on the annealing temperature suggest the improvement of the film crystallinity after thermal annealing is not the only dominating effect. Our investigation provides the constructive information to tune the thermal and electrical properties of organic semiconductors.

POST-ANNEALING EFFECTS ON THE STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF ITO FILMS STUDIED BY SPECTROSCOPIC ELLIPSOMETRY

2010 ◽  
Vol 24 (06) ◽  
pp. 595-605 ◽  
Author(s):  
Y. INRITSAPONG ◽  
P. CHINDAUDOM ◽  
N. NUNTAWONG ◽  
V. PATTHANASETTHAKUL ◽  
M. HORPHATHUM ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Electrical Properties ◽  
Spectroscopic Ellipsometry ◽  
Annealing Temperature ◽  
Analysis Data ◽  
Optical And Electrical Properties ◽  
Optical Index ◽  
Post Annealing ◽  
Ito Thin Films ◽  
Annealing Effects

ITO thin films were coated on unheated glass and Si -wafer (100) substrates by ion-assisted evaporation. The effects of post annealing, in vacuum at 250°C and 350°C for 1 h, on the structural, optical and electrical properties were studied. The structure was characterized by X-ray diffraction (XRD). The surface morphology of the films was investigated by atomic force microscopy (AFM). The optical properties were evaluated by spectrophotometer and spectroscopic ellipsometry (SE). The resistivity was measured by the four-point probes method. It was found that the increase of post-annealing temperature would improve the film crystallinity and electrical properties. The preferred orientation of ITO thin film after annealing is (222). The resistivity of the as-deposited film is found to be 5.52 × 10-4 Ωcm and decreases to 2.11 × 10-4 Ωcm after annealing at 350°C. The AFM image reveals that the surface roughness decreases with increasing annealing temperature. The uniqueness test based on SE analysis data has been applied for ITO modeling. This modeling indicates that the film microstructure consists of three layers including the higher-index ITO layer, the effective medium approximation (EMA) layer to represent a slightly lower optical index, and the surface roughness layer on top. The EMA thickness and its relative composition decrease with increasing annealing temperature. The extinction coefficient in the IR region increases whereas the refractive index decreases with increasing annealing temperature.

Effects of Post-Annealing on the Electrical and Optical Properties of ZnO Thin Films Grown on Al2O3 Substrates by Atomic Layer Epitaxy

2007 ◽  
Vol 544-545 ◽  
pp. 729-732 ◽  
Author(s):  
Chong Mu Lee ◽  
Young Joon Cho ◽  
Ho Jin Kim ◽  
Wang Woo Lee ◽  
Hyoun Woo Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Optical Properties ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Annealing Atmosphere ◽  
Oxygen Annealing ◽  
Uv Emission

Influence of nitrogen and oxygen annealing atmospheres on the carrier concentration, carrier mobility, electrical resistivity and PL characteristics as well as the crystallinity of ZnO films deposited on sapphire substrates by atomic layer deposition (ALD) were compared. X-ray diffraction (XRD) and photoluminescence (PL) analyses, and Hall measurement were performed to investigate the crystallinity, optical properties and electrical properties of the ZnO thin films, respectively. The UV emission intensity for oxygen annealing is stronger than that for nitrogen annealing in the case of annealing at 600°C, but the difference decreases with the Increase of annealing temperature. The strongest UV emission is obtained by oxygen annealing at 800°C. However, from the viewpoint of electrical resistivity annealing at 1,000°C in either an oxygen or a nitrogen atmosphere is more desirable. Taking both the PL and electrical properties into consideration it may be concluded that optimum annealing condition for ZnO thin films grown on the sapphire substrate by ALD is an annealing temperature of 900°C and an annealing atmosphere of oxygen although the effects of annealing atmosphere on the optical and electrical properties are not so significant.

Electrical Properties of InSbN Alloys Fabricated by Two-Step Ion Implantation

2012 ◽  
Vol 569 ◽  
pp. 305-310
Author(s):  
Y. Wang ◽  
D.H. Zhang ◽  
Y.J. Jin ◽  
X.Z. Chen ◽  
J.H. Li
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Carrier Concentration ◽  
Electron Concentration ◽  
Hall Mobility ◽  
Scattering Mechanism ◽  
Annealing Temperatures ◽  
Donor Type ◽  
Nitrogen Ions ◽  
Exponential Relation

We report the electrical properties of the InSbN alloys fabricated by two-step implantation of nitrogen ions into InSb wafers, characterized by Hall measurements. The alloy with higher implanted dose shows lower electron concentration due to the acceptor nature of nitrogen. At temperatures below 150 K, the electron concentration does not change and follows an exponential relation at above 200 K. The Hall mobility in all samples monotonically decreases with the increase of temperature, indicating the phonon dominating scattering mechanism. The annealing results reveal that annealing temperatures up to 598 K make the carrier concentration lower due to the reduction of donor-type defects caused by ion implantation and the acceptor nature of nitrogen.

Effects of Annealing and Different Substrate Materials on Ohmic Contact Property of IGZO Films

2013 ◽  
Vol 423-426 ◽  
pp. 846-851
Author(s):  
Ji Feng Shi
Keyword(s):  
Electrical Properties ◽  
Ohmic Contact ◽  
Annealing Temperature ◽  
Optical And Electrical Properties ◽  
Glass Substrates ◽  
Contact Property ◽  
Suitable Temperature ◽  
Contact Characteristic ◽  
Amorphous Ingazno ◽  
Better Than

Amorphous InGaZnO(a-IGZO) films were deposited on the glass substrates with Al/Mo/ITO films separately using magnetron sputtering and photograph methods,to form resistance structures between a-IGZO films and Al/Mo/ITO films.These samples were annealed in the air and N2 ambience in a series of temperature separately.The results show that regardless of N2 or air ambience,samples annealing at 250 degrade,IGZO films show a good ohmic contact characteristic withAl/Mo/ITOmaterials.And,IGZO films have a better ohmic contact characteristic with ITO/Al than Mo. The transmittance of the IGZO films annealed is better than the transmittance of samples without annealing.And ,the transmittance of samples annealed is rising with the increasing of annealing temperature. Considering the optical and electrical properties of IGZO films, we suggest that 250 centi degrades is a suitable temperature for annealing.

scholarly journals STUDYING THE TRANSPARENT AND ELECTRICAL PROPERTIES OF ZnO:Ti THIN FILM WHICH IS PREPARED BY DC MAGNETRON SPUTTERINGSPUTTERING

2009 ◽  
Vol 12 (12) ◽  
pp. 59-64
Author(s):  
Binh Van Ho ◽  
Hung Vu Tuan Le ◽  
Nhien Thi Ngoc Nguyen ◽  
Dat Thanh Huynh ◽  
Phuong Ai Duong ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Resistivity ◽  
Electrical Properties ◽  
Zno Films ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Conductive Oxide ◽  
Doped Zno ◽  
Ceramic Targets

The Ti-doped Zno films were deposited onto glass substrates from ceramic targets ZnO with various Ti concentrations using a DC magnetron sputtering. The experimental results show that all thin films are transparent and conductive oxide films, with the appropriate Ti concentration (⁓1.5% Ti), the conductance of films can be improved. Optical characteristics of thin films was determined by UV-V is spectroscopy. The thickness of thin films was measured by Stylus method. The electrical resistivity was measured by four-point probe, and the roughness of films was determined by AFM.

scholarly journals Annealing effects on optical and structural properties of chromium oxide thin film deposited by PLD technique

2018 ◽  
Vol 16 (38) ◽  
pp. 35-41
Author(s):  
Fuad T. Ibrahim
Keyword(s):  
Thin Films ◽  
Absorption Coefficient ◽  
Chromium Oxide ◽  
Annealing Temperature ◽  
Laser Energy ◽  
Oxide Thin Film ◽  
Pulse Laser Deposition Method ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Annealing Effects

Optical properties of chromium oxide (Cr2O3) thin films which were prepared by pulse laser deposition method, onto glass substrates. Different laser energy (500-900) mJ were used to obtain Cr2O3 thin films with thickness ranging from 177.3 to 372.4 nm were measured using Tolansky method. Then films were annealed at temperature equal to 300 °C. Absorption spectra were used to determine the absorption coefficient of the films, and the effects of the annealing temperature on the absorption coefficient were investigated. The absorption edge shifted to red range of wavelength, and the optical constants of Cr2O3 films increases as the annealing temperature increased to 300 °C. X-ray diffraction (XRD) study reveals that Cr2O3 thin films are amorphous; while the crystal structure of annealed Cr2O3 films is rhombohedral after annealing at 300 °C for two hour. AFM studies of Cr2O3 thin films exhibit a smooth and well dispersed on the surface.

Effect of film thickness on the structural and electrical properties of Ga-doped ZnO thin films prepared on glass and Al2O3 (0001) substrates by RF magnetron sputtering method

2009 ◽  
Vol 24 (2) ◽  
pp. 441-447 ◽  
Author(s):  
Seung Wook Shin ◽  
S.M. Pawar ◽  
Tae-Won Kim ◽  
Jong-Ha Moon ◽  
Jin Hyeok Kim
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Rf Magnetron Sputtering ◽  
Glass Substrates ◽  
Plane Orientation ◽  
Structural And Electrical Properties ◽  
Doped Zno

Thin films of Ga-doped ZnO (GZO) were prepared on glass and Al2O3 (0001) substrates by using RF magnetron sputtering at a substrate temperature of 350 °C, RF power of 175 W, and working pressure of 6 mTorr. The effect of film thickness and substrate type on the structural and electrical properties of the thin films was investigated. X-ray diffraction study showed that GZO thin films on glass substrates were grown as a polycrystalline hexagonal wurtzite phase with a c-axis preferred, out-of-plane orientation and random in-plane orientation. However, GZO thin films on Al2O3 (0001) substrates were epitaxially grown with an orientation relationship of . The structural images from scanning electron microscopy and atomic force microscopy showed that the GZO thin films on glass substrates had a rougher surface morphology than those on Al2O3 (0001) substrates. The electrical resistivity of 1000 nm-thick GZO thin films grown on glass and Al2O3 (0001) substrates was 3.04 × 10−4 Ωcm and 1.50 × 10−4 Ωcm, respectively. It was also found that the electrical resistivity difference between the films on the two substrates decreased from 9.48 × 10−4 Ωcm to 1.45 × 10−4 Ωcm with increasing the film thickness from 100 nm to 1000 nm.

A Study of the Structural and Electrical Characteristics of Thermally Oxidized Al-Doped Zn3N2 Film on Glass

2012 ◽  
Vol 545 ◽  
pp. 294-299
Author(s):  
L.Y. Low ◽  
Mat Johar Abdullah ◽  
N.H. Al-Hardan
Keyword(s):  
Zinc Oxide ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Xrd Analysis ◽  
Nitride Film ◽  
Electrical Characteristics ◽  
Glass Substrates ◽  
Zinc Nitride ◽  
Structural And Electrical Properties

We report the deposition of aluminium doped zinc nitride film (Al-Zn3N2) on glass substrates by RF sputtering. Thermal oxidation of the film under different annealing temperature (500°C to 600°C) was carried out. Structural and electrical properties of the annealed films were investigated. XRD analysis showed that Al-Zn3N2film was successfully converted into Al-N zinc oxide (ANZO) at 500°C. I-V characteristics of the films were measured and the lowest estimated resistivity of the films of 4kΩ.cm can be achieved at 600°C.

Target to Substrate Distance Dependent Optical and Electrical Properties of Sputtered NiO Films

2012 ◽  
Vol 584 ◽  
pp. 33-36
Author(s):  
Avula Mallikarjuna Reddy ◽  
Akepati Sivasankar Reddy ◽  
Pamanji Sreedhara Reddy
Keyword(s):  
Electrical Resistivity ◽  
Electrical Properties ◽  
Optical Transmittance ◽  
Optical And Electrical Properties ◽  
Glass Substrates ◽  
Substrate Distance ◽  
High Electrical Resistivity ◽  
Dc Reactive Magnetron Sputtering ◽  
Direct Band ◽  
Nio Films

Nickel oxide (NiO) thin films were deposited on glass substrates at various target to substrate distances in the range of 60 to 80 mm by dc reactive magnetron sputtering technique. It was observed that target to substrate distance influenced the morphological, optical and electrical properties of the deposited films. The optical results revealed that the optical transmittance of the films increased with increasing the target to substrate distance upto 70 mm, thereafter it was decreased. The increase in transmittance of the films was due to an increase in size of the grains. The NiO films exhibited an optical transmittance of 60 % and direct band gap of 3.82 eV at target to substrate distance of 70 mm. The films showed high electrical resistivity of 37.3 Ωcm at target to substrate distance of 60 mm and low electrical resistivity of 5.1 Ωcm at target to substrate distance of 70 mm. At high target to substrate distance of 80 mm the electrical resistivity of the film was increased.

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