3D Heterogeneous Integration using MEMS Devices for RF Applications

2012 ◽  
Vol 1427 ◽  
Author(s):  
Fumihiko Nakazawa ◽  
Xiaoyu Mi ◽  
Takeaki Shimanouchi ◽  
Tadashi Nakatani ◽  
Takashi Katsuki ◽  
...  
Keyword(s):  
Rf Mems ◽  
Acoustic Resonator ◽  
Tunable Filter ◽  
Wafer Surface ◽  
Heterogeneous Integration ◽  
Mems Devices ◽  
Mems Switches ◽  
Mems Switch ◽  
Film Bulk ◽  
Rf Applications

ABSTRACTThis paper presents novel 3D heterogeneous integrations using MEMS Devices for RF applications. We propose a 3D heterogeneous integration method that combines the advantages of LTCC, passive integration, and MEMS technologies. The basic concept is to form a large-size LTCC wiring wafer and then to form high-Q passives or MEMS filters directly on the wafer surface. Other functional devices such as ICs, SAWs, and MEMS switches are mounted above the surface-formed devices. A miniaturized duplexer consisted of IPD, SAW, and film bulk acoustic resonator (FBAR); and a next generation duplexer module consisted of an MEMS tunable filter and a piezoelectric transducer (PZT)-actuated RF MEMS switch were constructed to demonstrate its feasibility and effectiveness.

A Stamp-Sealed Microshell Package for RF MEMS Switches

2007 ◽  
Author(s):  
John Heck ◽  
Hanan Bar ◽  
Tsung-Kuan A. Chou ◽  
Quan Tran ◽  
Qing Ma ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
Rf Mems ◽  
Mems Devices ◽  
Wafer Level ◽  
Subsequent Formation ◽  
Mems Switches ◽  
Mems Switch ◽  
Rf Mems Switches ◽  
Unique Method ◽  
Chemical Etchant

This paper describes a unique method of encapsulating MEMS switches at the wafer level using a thin-film “microshell” lid and a novel micro-embossing, or “stamping” technique to seal the lid. After fabrication of the MEMS switch and subsequent formation of the microshell, the switches are released through gold tunnels that allow the penetration of a chemical etchant. In a controlled ambient, a “stamp” wafer is aligned to the device wafer, and the wafers are thermally compressed together. This process applies pressure across each tunnel to fuse the gold, thereby sealing the microshell packages. By sealing and passivating the switches at the wafer level, the wafers can be exposed to backend processing, packaging, and assembly steps such as dicing without damaging the sensitive MEMS devices. Furthermore, the size, cost, and complexity of the packaged system are significantly reduced compared to standard wafer bonding processes.

scholarly journals RF MEMS Switch Fabrication and Packaging

2020 ◽  
Author(s):  
Lakshmi Swaminathan
Keyword(s):  
Communication Systems ◽  
High Performance ◽  
Satellite Communication ◽  
Rf Mems ◽  
Mems Devices ◽  
Micro Electro Mechanical Systems ◽  
Mems Switches ◽  
Mems Switch ◽  
Hermetic Sealing ◽  
Rf Mems Switches

RF (Radio Frequency) MEMS (Micro Electro Mechanical Systems) technology is the application of micromachined mechanical structures, controlled by electrical signals and interacting with signals in the RF range. The applications of these devices range from switching networks for satellite communication systems to high performance resonators and tuners. RF MEMS switches are the first and foremost MEMS devices designed for RF technology. A specialized method for fabricating microsturctures called surface micromachining process is used for fabricating the RF MEMS switches. Die level packaging using available surface mount style RF packages. The packaging process involved the design of RF feed throughs on the Alumina substrates to the die attachment, wire bonding and hermetic sealing using low temperature processes.

scholarly journals Performance Comparison Of Shunt Rf Mems Switches

2021 ◽  
Vol 12 (5) ◽  
pp. 596-606
Author(s):  
S Girish Gandhi, I Govardhani, M Venkata Narayana, K Sarat Kumar
Keyword(s):  
Comparative Study ◽  
Insertion Loss ◽  
Return Loss ◽  
Rf Mems ◽  
Switching Time ◽  
Performance Comparison ◽  
Mems Switches ◽  
Mems Switch ◽  
Rf Mems Switches ◽  
And Performance

This is an attempt to compare three different shunt configured RF MEMS switches which offers a choice for applications in satellite and antennas. Advanced RF communication domain demands for design and modeling of RF MEMS switch which provides extremely reduced pull-in voltage, better isolation, low insertion loss, and with greater reliability. The proposed work manages with comparison of design modeling and performance of three different shunt configured RF MEMS switches. The proposed shunt configured RF MEMS switches are designed with different dimensions with different meandering techniques with perforations on beam structure helps in reducing the amount of voltage required for actuation of switch which is known as pull-in voltage. Comparative study of three different RF MEMS switches which involves in conducting electromechanical analysis are carried out using COMSOL multi physics tool and electromagnetic analysis are carried out using HFSS tool. Moreover the comparative study involves in comparing the values of pull-in voltage, switching time and capacitance, stress, insertion loss, return loss and isolation of three different RF MEMS switches. Proposed first switch model derives pull-in voltage of 16.9v with the switching time of 1.2µs, isolation of 47.70 dB at 5GHz and insertion loss of 0.0865 dB and return loss of 41.55 dB. Proposed second switch model derives pull-in voltage of 18.5v with the switching time of 2.5µs, isolation of 37.20 dB at 8GHz and insertion loss of 0.1177 dB and return loss of 38.60 dB. Proposed third switch model delivers pull-in voltage of 18.75v with the switching time of 2.56µs, isolation of 44.1552 dB at 8GHz and insertion loss of 0.0985 dB and return loss of 42.1004 dB.

RF-MEMS Based Oscillators

2012 ◽  
pp. 120-155
Author(s):  
Anis Nurashikin Nordin
Keyword(s):  
Acoustic Wave ◽  
Rf Mems ◽  
Low Cost ◽  
Individual Characteristics ◽  
Bulk Acoustic Wave ◽  
Mems Devices ◽  
Device Structure ◽  
Micro Electro Mechanical Systems ◽  
Wireless Transceiver ◽  
Film Bulk

Today’s high-tech consumer market demand complex, portable personal wireless consumer devices that are low-cost and have small sizes. Creative methods of combining mature integrated circuit (IC) fabrication techniques with innovative radio-frequency micro-electro-mechanical systems (RF-MEMS) devices has given birth to wireless transceiver components, which operate at higher frequencies but are manufactured at the low-cost of standard ICs. Oscillators, RF bandpass filters, and low noise amplifiers are the most critical and important modules of any wireless transceiver. Their individual characteristics determine the overall performance of a transceiver. This chapter illustrates RF-oscillators that utilize MEMS devices such as resonators, varactors, and inductors for frequency generation. Emphasis will be given on state of the art RF-MEMS components such as film bulk acoustic wave, surface acoustic wave, flexural mode resonators, lateral and vertical varactors, and solenoid and planar inductors. The advantages and disadvantages of each device structure are described, with reference to the most recent work published in the field.

Analysis of Cycle Lifetimes and Failure Modes for RF MEMS Switches

2005 ◽  
Author(s):  
Chris Brown ◽  
Jacqueline Krim ◽  
Art Morris
Keyword(s):  
Failure Modes ◽  
Electrode Materials ◽  
Rf Mems ◽  
Operating Parameters ◽  
Rf Mems Switch ◽  
Testing Conditions ◽  
Mems Switches ◽  
Mems Switch ◽  
Contact Points ◽  
Rf Mems Switches

RF MEMS switch lifetimes are limited by stiction of the moving components and degradation of the metal to metal contact points during cycling. Currently, maximum switch lifetimes are around 10 to 25 billion cycles. Past experimentation has shown that some stiction problems can be overcome by carefully controlling the operating parameters, but problems at the contact points remain [1]. It is believed that by developing a set of tribological design rules which limit the factors leading to catastrophic failure, switches can operate in excess of 100 billion cycles. Recent research has quantified the reliability and durability of gold contact points on RF MEMS switches as a function of current [2]. Most experimentation on RF MEMS switches has focused on controlling the operating parameters such as current, voltage, electrode materials, contact area, switching mode and force; however, limited work has been performed on a single device type in multiple environmentally controlled testing conditions such as vacuum, cryogenic temperatures, etc. This presentation will discuss performance of the wiSpry RF MEMS switch focusing on quantification of device reliability and failure mechanisms under various atmospheric and temperature conditions. Environmental testing conditions include switching in open air, vacuum and inert gasses, in temperatures ranging from 294 K to 4 K.

Analysis of Topographical Changes and Adhesion Failures in Gold-to-Gold Metal RF MEMS Switches With Cycling

2009 ◽  
Author(s):  
Seung Min Yeo ◽  
Spyros I. Tseregounis ◽  
Andreas A. Polycarpou ◽  
Adam Fruehling ◽  
Dimitrios Peroulis
Keyword(s):  
Contact Area ◽  
Contact Surface ◽  
Rf Mems ◽  
Critical Factor ◽  
Bottom Surface ◽  
Material Transfer ◽  
Mems Switches ◽  
Mems Switch ◽  
Rf Mems Switches ◽  
Gold Contact

Topographical changes within the contact area as a function of cycling could be a critical factor causing failure and reliability issues in RF MEMS switch operation. In this paper, gold-to-gold contact, cantilever-type RF MEMS switches were tested (cold-switching mode) for different number of cycles, namely, 10, 102, 103, 104, 105, and 106. After the cycling tests, the contact area of each switch was scanned using optical microscopy, scanning electron microscopy and atomic force microscopy to quantify the exact gold-to-gold contact surface changes, leading to adhesion failures (at about 106 cycles). Detailed roughness analysis was carried out to better quantify topographical changes on the contact surface and relate them to failures. It was found that the material transfer from the top beam to the bottom substrate was dominant, and observed after only few cycles. Adhesion failure of gold-to-gold contact switches could be attributed to large protrusions formed on the bottom surface as the switch cycles over 105 times.

Quantification of Uncertainty in Creep Failure in RF-MEMS Switches

2012 ◽  
Author(s):  
Peter A. Kolis ◽  
Marisol Koslowski ◽  
Anil K. Bajaj
Keyword(s):  
Rf Mems ◽  
Beam Model ◽  
Creep Failure ◽  
Micro Electro Mechanical Systems ◽  
Modal Expansion ◽  
Mems Switches ◽  
Electrostatically Actuated ◽  
Mems Switch ◽  
Rf Mems Switches

We present simulations of the dynamic response of radio frequency micro-electro-mechanical-systems (RF-MEMS) switches undergoing creep deformation. The model includes a microscale-informed Coble creep formulation incorporated in a beam model of an electrostatically actuated RF-MEMS switch, and it is solved using a Ritz-Galerkin based modal expansion. The resulting effects on the long-term device behavior as well as the implications of uncertainty in the device geometry and material parameters are studied. We find that the addition of creep to the beam model results in an undesired degradation of the device performance, as evidenced by decreases in the closing and release voltages.

Preparation and Characterization of Piezoelectric Films of ZnO and AlN by RF Sputtering for RF MEMS Applications

2012 ◽  
Vol 500 ◽  
pp. 84-89 ◽  
Author(s):  
Sudhir Chandra ◽  
Atul Vir Singh
Keyword(s):  
Rf Mems ◽  
Potassium Hydroxide Solution ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Acoustic Resonator ◽  
Zno Films ◽  
Mems Devices ◽  
Potential Applications ◽  
Piezoelectric Films

In present work, we report preparation and characterization of piezoelectric films of zinc oxide (ZnO) and aluminum nitride (AlN) by RF magnetron sputtering using respective ceramic targets. The effect of ambient gas, substrate temperature, RF power and sputtering pressure has been studied to get highly c-axis oriented films for potential applications in micro-electromechanical systems. The films were characterized by X-ray diffraction technique to identify the crystallographic orientation. It was observed that the film deposited in pure Argon (Ar) ambient were amorphous or weekly crystallized with no preferred (002) orientation. On the other hand, the films prepared in Ar-O2 for ZnO were highly c-axis oriented. Similarly AlN films were observed to be oriented along c-axis perpendicular to substrate only when deposited in mixture of Ar-N2. To demonstrate the application of piezoelectric properties, an FBAR device (Film Bulk Acoustic Resonator) using ZnO thin film was fabricated. ZnO films are very sensitive to the chemicals used in the micro-electro-mechanical systems (MEMS) fabrication processes which include acids, bases and etchants of different material layers (e.g. SiO2, chromium, gold etc.). A specially designed mechanical jig was used for physically protecting the film during Si anisotropic etching process in potassium hydroxide solution. The potential applications of these films in various RF MEMS devices have been discussed.

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