Characterization of pulsed laser deposited Cu2ZnSnS4 thin films for Solar cell

2012 ◽  
Vol 1447 ◽  
Author(s):  
Tanaji P. Gujar ◽  
Vaishali. R. Shinde ◽  
Ram S. Katiyar
Keyword(s):  
Thin Films ◽  
Amorphous State ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Sem Images ◽  
Homogeneous Surface ◽  
X Ray ◽  
Czts Thin Films ◽  
Deposited Film

ABSTRACTIn the present work we report the synthesis of Cu2ZnSnS4 (CZTS) films by pulsed laser deposition (PLD) and the effect of sulfur annealing on structure, composition, morphological and optical characterization of CZTS thin films. Raman spectra of the films exhibited the characteristics peaks of Kesterite structure. However, annealing caused to transfer the films from amorphous state into crystalline state. Scanning electron microscope (SEM) images revealed that as-deposited film exhibited a crack free, smooth, densely packed and homogeneous surface which was changed to rigid granular appearance after annealing. Energy dispersive X-ray spectroscopy (EDS) determined the compositions of the CZTS thin films which was near stoichiometry for the annealed samples. Ultraviolet–visible (UV–Vis) spectra showed the band gap of as-deposited film was 1.60 eV which was decreased to 1.40 eV after annealing.

scholarly journals Synthesis and Characterization of Cu2ZnSnS4 Thin Films Obtained by Combined Magnetron Sputtering and Pulsed Laser Deposition

Nanomaterials ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 2403
Author(s):  
Mohamed-Yassine Zaki ◽  
Florinel Sava ◽  
Angel-Theodor Buruiana ◽  
Iosif-Daniel Simandan ◽  
Nicu Becherescu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Stoichiometric Composition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Synthesis And Characterization ◽  
X Ray

Cu2ZnSnS4 (CZTS) is a complex quaternary material, and obtaining a single-phase CZTS with no secondary phases is known to be challenging and dependent on the production technique. This work involves the synthesis and characterization of CZTS absorber layers for solar cells. Thin films were deposited on Si and glass substrates by a combined magnetron sputtering (MS) and pulsed laser deposition (PLD) hybrid system, followed by annealing without and with sulfur powder at 500 °C under argon (Ar) flow. Three different Cu2S, SnS2, and ZnS targets were used each time, employing a different target for PLD and the two others for MS. The effect of the different target arrangements and the role of annealing and/or sulfurization treatment were investigated. The characterization of the absorber films was performed by grazing incidence X-ray diffraction (GIXRD), X-ray reflectometry (XRR), Raman spectroscopy, scanning electron microscopy, and regular transmission spectroscopy. The film with ZnS deposited by PLD and SnS2 and Cu2S by MS was found to be the best for obtaining a single CZTS phase, with uniform surface morphology, a nearly stoichiometric composition, and an optimal band gap of 1.40 eV. These results show that a new method that combines the advantages of both MS and PLD techniques was successfully used to obtain single-phase Cu2ZnSnS4 films for solar cell applications.

Heat Treatment of Bi(Pb)-Sr-Ca-Cu-O Thin Films Prepared by Pulsed Laser Deposition

2009 ◽  
Vol 293 ◽  
pp. 47-51 ◽  
Author(s):  
A.N. Jannah ◽  
S.A. Halim ◽  
Abdullah Huda
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Amorphous State ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Superconducting Transition ◽  
Superconducting Properties ◽  
Oxygen Environment ◽  
Post Annealing ◽  
Deposited Film

Here, Bi(Pb)-Sr-Ca-Cu-O thin films having superconducting properties have been fabricated using Nd-YAG pulsed laser ablation onto single-crystal MgO(100) substrates. The as-deposited film was found to be in an amorphous state. The crystalline structure appeared after the film was annealed in an oxygen environment. The XRD spectrum revealed epitaxial growth of BSCCO (2212) phase at annealing temperatures of 850°C, 860°C and 870°C. In the amorphous state, the microstructure of the films exhibited spherical clusters of various sizes. Upon annealing, plate-like and needle-like structures were observed. These structures fused into grains with a plate-like shape when the annealing temperature reached 870°C. This could be due to the diffusion and arrangement of the components that make up the 2212 phase at elevated temperature in an oxygen environment. The superconducting transition temperature, Tc, is highest for samples annealed at 870°C. The post-annealing procedures were carried out in the ablation chamber in order to minimize contamination.

CHEMICAL AND STRUCTURAL CHARACTERIZATION OF Co–Ni SILICIDE THIN FILMS

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1661-1666 ◽  
Author(s):  
M. GARCIA-MENDEZ ◽  
N. ELIZONDO-VILLARREAL ◽  
M. H. FARIAS ◽  
G. A. HIRATA ◽  
G. BEAMSON
Keyword(s):  
Thin Films ◽  
Electron Spectroscopy ◽  
Chemical Shifts ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Xps Analysis ◽  
Silicide Formation ◽  
X Ray ◽  
Transmission Electron

By means of pulsed laser deposition we prepared Co–Ni/p-Si thin films upon a Si(100) substrates. Samples were thermally treated in vacuum in order to promote silicide formation. From X-ray photo-electron spectroscopy (XPS) analysis, we detected chemical shifts of the Co2p and Ni2p transitions, characteristic of silicide binding energy, at the respective ranges of 778.3–778.6 and 853.2–853.6 eV. By means of high resolution transmission electron microscopy (HRTEM) we identified some nanocrystalline regions belonging to CoSi 2, Ni 2 Si and NiSi 2 structures. We also appreciate that the resulting films are of a polycrystalline nature.

Preparation and characterization of CuSbSe2 thin films deposited by pulsed laser deposition

2021 ◽  
Vol 127 ◽  
pp. 105716
Author(s):  
Tianzhen Guo ◽  
Dan Wang ◽  
Yajun Yang ◽  
Xiaoyong Xiong ◽  
Kelin Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

Processing by Pulsed Laser Deposition and Structural, Morphological and Chemical Characterization of Bi-Pb-Sr-Ca-Cu-O and Bi-Pb-Sb-Sr-Ca-Cu-O Thin Films

2010 ◽  
Vol 75 ◽  
pp. 202-207
Author(s):  
Victor Ríos ◽  
Elvia Díaz-Valdés ◽  
Jorge Ricardo Aguilar ◽  
T.G. Kryshtab ◽  
Ciro Falcony
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Chemical Characterization ◽  
Laser Deposition ◽  
Nominal Composition ◽  
Deposition Parameters ◽  
The Relationship

Bi-Pb-Sr-Ca-Cu-O (BPSCCO) and Bi-Pb-Sb-Sr-Ca-Cu-O (BPSSCCO) thin films were grown on MgO single crystal substrates by pulsed laser deposition. The deposition was carried out at room temperature during 90 minutes. A Nd:YAG excimer laser ( = 355 nm) with a 2 J/pulse energy density operated at 30 Hz was used. The distance between the target and substrate was kept constant at 4,5 cm. Nominal composition of the targets was Bi1,6Pb0,4Sr2Ca2Cu3O and Bi1,6Pb0,4Sb0,1Sr2Ca2Cu3OSuperconducting targets were prepared following a state solid reaction. As-grown films were annealed at different conditions. As-grown and annealed films were characterized by XRD, FTIR, and SEM. The films were prepared applying an experimental design. The relationship among deposition parameters and their effect on the formation of superconducting Bi-system crystalline phases was studied.

Pulsed laser deposition and characterization of multilayer metal-carbon thin films

2011 ◽  
Vol 257 (15) ◽  
pp. 6445-6450 ◽  
Author(s):  
K. Siraj ◽  
M. Khaleeq-ur-Rahman ◽  
M.S. Rafique ◽  
M.Z. Munawar ◽  
S. Naseem ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Carbon Thin Films ◽  
Multilayer Metal

Raman characterization of Bi12SiO20 thin films obtained by pulsed laser deposition

1997 ◽  
Vol 109-110 ◽  
pp. 359-361 ◽  
Author(s):  
J.C. Alonso ◽  
R. Diamant ◽  
E. Haro-Poniatowski ◽  
M. Fernández-Guasti ◽  
G. Muñoz ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Raman Characterization
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