An Optimized ICP Etching Process for Pyramidal C-QWIP FPAs

2012 ◽  
Vol 1427 ◽  
Author(s):  
Jason Sun ◽  
Kwong-kit Choi ◽  
Unchul Lee
Keyword(s):  
Photoelectron Spectroscopy ◽  
Quantum Wire ◽  
Inductively Coupled Plasma ◽  
Etching Rate ◽  
Focal Plane Arrays ◽  
Etching Process ◽  
Electrical Measurements ◽  
Process Technology ◽  
Icp Etching ◽  
Etching Profile

ABSTRACTWe developed an optimized inductively coupled plasma (ICP) etching process to produce GaAs pyramidal corrugated quantum well infrared photodetector focal plane arrays. A statistically-designed experiment was performed to optimize the etching parameters. The resulting parameters are discussed in terms of the effect on the etching rate and profile. This process uses a small amount of mask corrosion and the control of the etching mask gap to give a 45-50 degree V-groove etching profile, which is independent on the crystal orientation of GaAs. In the etching development, scanning electron microscope (SEM) was used to observe the surface morphology and the pattern profile. In addition, X-ray photoelectron spectroscopy (XPS) was utilized to obtain the elemental composition and the contamination of the etching surface. It is found that extremely small stoichiometric change and surface damage of the etching surface can be achieved while keeping relatively high etching rate and ~45 degree V-groove etching profile. This etching process is applied to the fabrication of pyramidal C-QWIP FPAs, which is expected to have better performance than the regular prism-shaped C-QWIPs according to electromagnetic (EM) modeling. The expected results will be verified by optical and electrical measurements. In addition to infrared detectors, this process technology can also be applied to GaAs V-groove solar cell, quantum wire light-emitting diodes, quantum wire lasers, and other GaAs –based devices.

Manufacture of High Aspect Ratio Bulk Titanium Micro-Parts by Inductively Coupled Plasma Etching

2008 ◽  
Author(s):  
Gang Zhao ◽  
Qiong Shu ◽  
Yue Li ◽  
Jing Chen
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Inductively Coupled Plasma ◽  
Etching Rate ◽  
Sidewall Roughness ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Novel Technology ◽  
Micro Parts ◽  
Etching Mask

A novel technology is developed to fabricate high aspect ratio bulk titanium micro-parts by inductively coupled plasma (ICP) etching. An optimized etching rate of 0.9 μm/min has been achieved with an aspect ratio higher than 10:1. For the first time, SU-8 is used as titanium etching mask instead of the traditional hard mask such as TiO2 or SiO2. With an effective selectivity of 3 and a spun-on thickness beyond 100 μm, vertical etching sidewall and low sidewall roughness are obtained. Ultra-deep titanium etching up to 200 μm has been realized, which is among the best of the present reports. Titanium micro-springs and planks are successfully fabricated with this approach.

scholarly journals Fabrication and Characterization of Black GaAs Nanoarrays via ICP Etching

2020 ◽  
Author(s):  
Jing Ma ◽  
Yongqiang Zhao ◽  
Wen Liu ◽  
Fuhua Yang ◽  
Xiaodong Wang
Keyword(s):  
Inductively Coupled Plasma ◽  
Fabrication Process ◽  
Etching Process ◽  
Photon Absorption ◽  
Hydrophobic Property ◽  
Water Contact ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Fabrication And Characterization

Abstract GaAs nanostructures has attracted more and more attention due to its excellent properties such as increasing photon absorption. The fabrication process on GaAs substrate were rarely reported and most of the preparation processes are complex. Here, we reported a black GaAs fabrication process using a simple Inductively coupled plasma (ICP) etching process，with no extra lithography process. The fabricated sample has a low Reflectance value，close to zero. Besides, the black GaAs also displayed hydrophobic property, with a water contact angle (CA) of 125°. This kind of black GaAs etching process could be added to the fabrication workflow of photodetectors and solar cell devices to further improve their characteristics.

Failure Analysis and Process Improvement for Through Silicon Via Interconnects

2009 ◽  
Vol 1156 ◽  
Author(s):  
Bivragh Majeed ◽  
Marc Van Cauwenberghe ◽  
Deniz Sabuncuoglu Tezcan ◽  
Philippe Soussan
Keyword(s):  
Failure Analysis ◽  
Process Improvement ◽  
Etching Rate ◽  
Dry Etching ◽  
Etching Process ◽  
Thickness Variation ◽  
Silicon Etching ◽  
Soft Landing ◽  
Etching Profile ◽  
Etching Parameters

AbstractThis paper investigates the failure causes for slopped through silicon vias (TSV) and presents process improvement for implementing the slopped TSV for 3D wafer level packaging (WLP). IMEC is developing slopped and scaled generic approaches for 3D WLP. Previously we have reported on the integrated process flow for the slopped (TSV) and showed the feasibility of Parylene N as a dielectric material. In the TSV process discussed here, firstly 200mm device wafer is bonded facedown on a carrier using temporary glue layer and thinned by grinding. TSV's are realized by dry etching from the wafer backside, followed by dielectric deposition and patterning. Dielectric patterning is done at the bottom of the via on 100 microns thin silicon device wafer supported by the carrier. Finally, conformal plating is done inside the via to obtain the interconnections.This paper discusses the yield killer or failure causes in the slopped TSV process. There can be many parameter including silicon etch uniformity, dielectric etching at the bottom of the via and resist residue inside the via that can reduce the yield of the process. We report that one of the main factors contributing to the yield loss is silicon dry etching effects including non-uniformity and notching. Using standard Bosch etching process, notching at the interface between landing oxide and silicon has been observed. The notching cause a discontinuity at the bottom of the via resulting in no plating at the bottom interface.In this paper we report on a new via shape that is a combination of slopped and straight etching sequence to overcome the notching problem. Different parameters including influence of grinding marks, mask opening, wafer thickness variation, etching rate and etching profile across the wafer were investigated. The optimized design rules for mask opening and effect of individual etching parameters on the etching profile will be presented. In etching, firstly a sloped via with slope of 60 degrees is optimized with changing different etching parameters including different gasses and pressure. Slope via facilitates in subsequent dielectric deposition and sputtering processes. Secondly, a straight wall etching process based on Bosch process and soft landing step with longer passivation steps were investigated to obtain the notch free etching profile. The optimized etching process is notch free, very repeatable and total variation across different wafers is less then 2 percent for 100 micron target opening.This paper reports the failure analysis of TSV and discuses the processes improvement to obtain higher yielding vias. Different parameters that reduced the yield are discussed with main focus on notching effects during silicon etching. An improved and characterized, notch free uniform silicon etching across the wafer process based on two step etching is presented. An integration flow implementing the above optimized parameters with electrical yield will be detailed in the paper.

scholarly journals XXV Международный симпозиум Нанофизика и наноэлектроника", Нижний Новгород, 9-12 марта 2021 г. Влияние добавки хлорпентафторэтана в составе хлорсодержащей плазмы на скорость и характеристики профиля травления арсенида галлия

2021 ◽  
Vol 55 (10) ◽  
pp. 837
Author(s):  
А.И. Охапкин ◽  
С.А. Краев ◽  
Е.А. Архипова ◽  
В.М. Данильцев ◽  
О.И. Хрыкин ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Inductively Coupled Plasma ◽  
Substrate Surface ◽  
Etching Rate ◽  
Plasma Chemical ◽  
Inductively Coupled ◽  
Initial Stage ◽  
Plasma Chemical Etching ◽  
Etching Profile ◽  
By Products

In this work, the dependence of plasma-chemical etching rate and the roughness of the surface of gallium arsenide crater on chloropentafluoroethane (C2F5Cl) concentration in a mixture with chlorine, forward power and etching duration were studied. Characteristics of GaAs etching crater were studied by white light interferometry and scanning electron microscopy. It is shown that C2F5Cl addition in chlorine-containing inductively coupled plasma led to a nonlinear change of gallium arsenide etching rate with time which can be explained by passivation of substrate surface at the initial stage by products of freon decay. Along with this, characteristics of the etching profile of GaAs are significantly improved. Forward power increase contributes to development of roughness, while the etching rate increases nonlinearly.

scholarly journals Fabrication and Characterization of Black GaAs Nanoarrays via ICP Etching

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Jing Ma ◽  
Yongqiang Zhao ◽  
Wen Liu ◽  
Peishuai Song ◽  
Liangliang Yang ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Fabrication Process ◽  
Etching Process ◽  
Photon Absorption ◽  
Hydrophobic Property ◽  
Water Contact ◽  
Inductively Coupled ◽  
Icp Etching

AbstractGaAs nanostructures have attracted more and more attention due to its excellent properties such as increasing photon absorption. The fabrication process on GaAs substrate was rarely reported, and most of the preparation processes are complex. Here, we report a black GaAs fabrication process using a simple inductively coupled plasma etching process, with no extra lithography process. The fabricated sample has a low reflectance value, close to zero. Besides, the black GaAs also displayed hydrophobic property, with a water contact angle of 125°. This kind of black GaAs etching process could be added to the fabrication workflow of photodetectors and solar cell devices to further improve their characteristics.

Plasma Etching of SiON Films Using Liquefied C7F14 Gas as Perfluorocarbon Alternative

2020 ◽  
Vol 12 (5) ◽  
pp. 641-646
Author(s):  
Jaemin Lee ◽  
Jihun Kim ◽  
Junmyung Lee ◽  
Hyun Woo Lee ◽  
Kwang-Ho Kwon
Keyword(s):  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Etching Rate ◽  
Film Surface ◽  
Optical Emission ◽  
Mixed Gas ◽  
Force Microscopy ◽  
Physicochemical Changes ◽  
Etching Profile ◽  
Langmuir Probe Measurements

In this study, we evaluated the possibility of replacing existing perfluorocarbon gas with C7F14, which can be recovered in its liquid state from room-temperature air. We performed plasma etching of SiON films using the CF4 + X + O2 mixed gas, where X = CHF3, C4F8, or C7F14, and examined the etching characteristics of the films (e.g., etching rate, etching profile, and selectivity over Si). Using contact angle goniometry, atomic force microscopy, and X-ray photoelectron spectroscopy, we analyzed the physicochemical changes in the etched SiON film surface. Moreover, optical emission spectroscopy and double Langmuir probe measurements were carried out for plasma diagnosis. Compared with the conventional CHF3 and C4F8 mixed plasma, the C7F14 mixed plasma exhibited a more perpendicular etching profile with higher SiON/Si selectivity and a smoother surface.

Study of Mesa Etching for Infrared Detector Based on InAs/GaSb Superlattice

2013 ◽  
Vol 760-762 ◽  
pp. 137-140 ◽  
Author(s):  
Jie Guo ◽  
Rui Ting Hao ◽  
Qian Run Zhao ◽  
Shi Qing Man
Keyword(s):  
Inductively Coupled Plasma ◽  
Infrared Detector ◽  
Etching Rate ◽  
Etching Time ◽  
Rf Power ◽  
Etching Technique ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Surface Leakage ◽  
Photovoltaic Detector

InAs/GaSb superlattice in infrared detector was grown on GaSb substrates by molecular beam epitaxy technique. Using inductively coupled plasma (ICP) etching technique and Cl2/Ar etching gas, the smooth mesa of the device was formed. The influence of etching time, Cl2 percent and RF power on the etching rate and the surface morphology of InAs bulk, GaSb bulk materials and superlattice were studied. It showed that the etching rate of InAs was lower than that of GaSb and the etching surface was smooth at Cl2 in the range of 20%~40%. The results will benefit to forming ohm contact and decrease surface leakage current in the photovoltaic detector.

Experimental Study of SiO2 Sputter Etching Process in 13.56 MHz rf-Biased Inductively Coupled Plasma

SPIN ◽  
2018 ◽  
Vol 08 (02) ◽  
pp. 1850002 ◽  
Author(s):  
Chuankun Han ◽  
Yiyong Yang ◽  
Weifeng Liu ◽  
Yijia Lu ◽  
Jia Cheng
Keyword(s):  
Inductively Coupled Plasma ◽  
Etching Rate ◽  
Deposition Process ◽  
Ion Flux ◽  
Etching Process ◽  
Current Ratio ◽  
Bias Power ◽  
Source Power ◽  
Inductively Coupled ◽  
Sputter Etching

Inductively coupled plasma (ICP) has been widely used in semiconductor manufacturing, especially in nanoscale etching and deposition process. It is important to understand the relationship among the 13.56[Formula: see text]MHz rf-biased power and the etching process. In this study, the effect of dual rf power on the SiO2 sputter etching is investigated by measuring the ion energy distributions (IEDs), ion flux and sputter etching rate. The results show that the IEDs transforms from uni-modal towards bi-modal distribution when rf-biased power is applied to electrode. The influence of source power, bias power, discharge pressure and current ratio on the ion flux, IEDs are investigated in detail. The energy separations measured by RFEA are in good agreement with analytical model. The ion flux can be modulated by the 13.56[Formula: see text]MHz rf-biased power. Moreover, the coil current ratio expands the control window of the ion bombardment energy for the ICP etch equipment while. Finally, an ion-enhanced etching model is introduced to obtain the sputter etching rate and reveals the influence of discharge conditions on the etch rate.

scholarly journals Insights on the Influence of Surface Chemistry and Rim Zone Microstructure of 42CrMo4 on the Efficiency of ECM

Materials ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2132
Author(s):  
Alexander Schupp ◽  
Oliver Beyss ◽  
Bob Rommes ◽  
Andreas Klink ◽  
Daniela Zander
Keyword(s):  
Mixed Oxide ◽  
Photoelectron Spectroscopy ◽  
Inductively Coupled Plasma ◽  
Material Removal ◽  
Chemical Elements ◽  
Nitrate Solution ◽  
Electrochemical Machining ◽  
Process Efficiency ◽  
Negative Effect ◽  
Sodium Nitrate Solution

The electrochemical machining (ECM) of 42CrMo4 steel in sodium nitrate solution is mechanistically characterized by transpassive material dissolution and the formation of a Fe3−xO4 mixed oxide at the surface. It is assumed that the efficiency of material removal during ECM depends on the structure and composition of this oxide layer as well as on the microstructure of the material. Therefore, 42CrMo4 in different microstructures (ferritic–pearlitic and martensitic) was subjected to two ECM processes with current densities of about 20 A/cm2 and 34 A/cm2, respectively. The composition of the process electrolyte was analyzed via mass spectrometry with inductively coupled plasma in order to obtain information on the efficiency of material removal and the reaction mechanisms. This was followed by an X-ray photoelectron spectroscopy analysis to detect the chemical composition and the binding states of chemical elements in the oxide formed during ECM. In summary, it has been demonstrated that the efficiency of material removal in both ECM processes is about 5–10% higher for martensitic 42CrMo4 than for ferritic–pearlitic 42CrMo4. This is on one hand attributed to the presence of the cementite phase at ferritic–pearlitic 42CrMo4, which promotes oxygen evolution and therefore has a negative effect on the material removal efficiency. On the other hand, it is assumed that an increasing proportion of Fe2O3 in the mixed oxide leads to an increase in the process efficiency.

scholarly journals Dry Etching of Germanium with Laser Induced Reactive Micro Plasma

2021 ◽  
Author(s):  
Martin Ehrhardt ◽  
Pierre Lorenz ◽  
Jens Bauer ◽  
Robert Heinke ◽  
Mohammad Afaque Hossain ◽  
...  
Keyword(s):  
Ion Beam ◽  
Etching Rate ◽  
Dry Etching ◽  
Etching Process ◽  
High Tech ◽  
Etching Time ◽  
High Quality ◽  
Machined Surface ◽  
Reactive Plasma ◽  
New Processing

AbstractHigh-quality, ultra-precise processing of surfaces is of high importance for high-tech industry and requires a good depth control of processing, a low roughness of the machined surface and as little as possible surface and subsurface damage but cannot be realized by laser ablation processes. Contrary, electron/ion beam, plasma processes and dry etching are utilized in microelectronics, optics and photonics. Here, we have demonstrated a laser-induced plasma (LIP) etching of single crystalline germanium by an optically pumped reactive plasma, resulting in high quality etching. A Ti:Sapphire laser (λ = 775 nm, EPulse/max. = 1 mJ, t = 150 fs, frep. = 1 kHz) has been used, after focusing with a 60 mm lens, for igniting a temporary plasma in a CF4/O2 gas at near atmospheric pressure. Typical etching rate of approximately ~ 100 nm / min and a surface roughness of less than 11 nm rms were found. The etching results were studied in dependence on laser pulse energy, etching time, and plasma – surface distance. The mechanism of the etching process is expected to be of chemical nature by the formation of volatile products from the chemical reaction of laser plasma activated species with the germanium surface. This proposed laser etching process can provide new processing capabilities of materials for ultra—high precision laser machining of semiconducting materials as can applied for infrared optics machining.

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