Terahertz light amplification by stimulated emission of radiation in optically pumped graphene

2012 ◽  
Vol 1451 ◽  
pp. 169-177
Author(s):  
Taiichi Otsuji ◽  
Stephane Boubanga Tombet ◽  
Akira Satou ◽  
S. Chan ◽  
Victor Ryzhii

ABSTRACTRecent advances in terahertz light amplification by stimulated emission of radiation in optically pumped graphene are reviewed. We present, within a picosecond time scale, fast relaxation and relatively slow recombination dynamics of photogenerated electrons and holes in an exfoliated graphene under infrared pulse excitation. We conduct time-domain spectroscopic studies using an optical pump and terahertz probe with an optical probe technique and show that graphene sheet amplifies an incoming terahertz field. The graphene emission spectral dependency on laser pumping intensity shows a threshold-like behavior, testifying to the occurrence of the negative conductivity and the population inversion. The emission spectra clearly narrow at a longer terahertz probe delay time, giving an evidence that the quasi-Fermi energy moves closer to the equilibrium at this longer terahertz probe delay time.

2011 ◽  
Author(s):  
Taiichi Otsuji ◽  
Stephane A. Boubanga Tombet ◽  
Silvia Chan ◽  
Akira Satou ◽  
Victor Ryzhii

2015 ◽  
Vol 6 ◽  
pp. 1100-1106 ◽  
Author(s):  
Kai Braun ◽  
Xiao Wang ◽  
Andreas M Kern ◽  
Hilmar Adler ◽  
Heiko Peisert ◽  
...  

Here, we demonstrate a bias-driven superluminescent point light-source based on an optically pumped molecular junction (gold substrate/self-assembled molecular monolayer/gold tip) of a scanning tunneling microscope, operating at ambient conditions and providing almost three orders of magnitude higher electron-to-photon conversion efficiency than electroluminescence induced by inelastic tunneling without optical pumping. A positive, steadily increasing bias voltage induces a step-like rise of the Stokes shifted optical signal emitted from the junction. This emission is strongly attenuated by reversing the applied bias voltage. At high bias voltage, the emission intensity depends non-linearly on the optical pump power. The enhanced emission can be modelled by rate equations taking into account hole injection from the tip (anode) into the highest occupied orbital of the closest substrate-bound molecule (lower level) and radiative recombination with an electron from above the Fermi level (upper level), hence feeding photons back by stimulated emission resonant with the gap mode. The system reflects many essential features of a superluminescent light emitting diode.


2011 ◽  
Vol 4 (8) ◽  
pp. 082103 ◽  
Author(s):  
Mohamed Lachab ◽  
Krishnan Balakrishnan ◽  
Bin Zhang ◽  
Joe Dion ◽  
Qhalid Fareed ◽  
...  

2013 ◽  
Vol 210 (9) ◽  
pp. 1768-1770 ◽  
Author(s):  
Zachary Lochner ◽  
Xiao-Hang Li ◽  
Tsung-Ting Kao ◽  
Md. Mahbub Satter ◽  
Hee Jin Kim ◽  
...  

2000 ◽  
Vol 77 (23) ◽  
pp. 3758-3760 ◽  
Author(s):  
Chii-Chang Chen ◽  
Hui-Wen Chuang ◽  
Gou-Chung Chi ◽  
Chang-Cheng Chuo ◽  
Jen-Inn Chyi

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