Mid-infrared silicon photonics for sensing applications

2012 ◽  
Vol 1437 ◽  
Author(s):  
Goran Z. Mashanovich ◽  
Milan M. Milosevic ◽  
Milos Nedeljkovic ◽  
David Cox ◽  
Vittorio M. N. Passaro ◽  
...  
Keyword(s):  
Wavelength Region ◽  
Medical Diagnostics ◽  
Group Iv ◽  
Propagation Loss ◽  
Ring Resonators ◽  
Optical Modulator ◽  
Active Device ◽  
Mid Infrared ◽  
Infrared Wavelength ◽  
Sensing Applications

ABSTRACTThe mid-infrared wavelength region offers a plethora of possible applications ranging from sensing, medical diagnostics and free space communications, to thermal imaging and IR countermeasures. Hence group IV mid-infrared photonics is attracting more research interest lately. Sensing is an especially attractive area as fundamental vibrations of many important gases are found in the 3 to 14 μm spectral region. To realise group IV photonic mid-infrared sensors several serious challenges need to be overcome. The first challenge is to find suitable material platforms for the mid-infrared. In this paper we present experimental results for passive mid-infrared photonic devices realised in silicon-on-insulator (SOI), silicon-on-sapphire (SOS), and silicon on porous silicon (SiPSi). Although silicon dioxide is lossy in most parts of the mid-infrared, we have shown that it has potential to be used in the 3-4 μm region. We have characterized SOI waveguides with < 1 dB/cm propagation loss. We have also designed and fabricated SOI passive devices such as MMIs and ring resonators. For longer wavelengths SOS or SiPSi structures could be used. An important active device for long wavelength group IV photonics will be an optical modulator. We present relationships for the free-carrier induced electro-refraction and electro-absorption in silicon in the mid-infrared wavelength range. Electro-absorption modulation is calculated from impurity-doping spectra taken from the literature, and a Kramers-Kronig analysis of these spectra is used to predict electro-refraction modulation. We have examined the wavelength dependence of electro-refraction and electro-absorption, and found that the predictions suggest longer-wave modulator designs will in many cases be different than those used in the telecom range.

Silicon photonic devices for mid-infrared applications

Nanophotonics ◽  
2014 ◽  
Vol 3 (4-5) ◽  
pp. 329-341 ◽  
Author(s):  
Raji Shankar ◽  
Marko Lončar
Keyword(s):  
Gas Sensing ◽  
Wavelength Region ◽  
Photonic Devices ◽  
Ring Resonators ◽  
Space Communications ◽  
Mid Infrared ◽  
Silicon Photonic ◽  
Processing Techniques ◽  
Silicon Based

AbstractThe mid-infrared (IR) wavelength region (2–20 µm) is of great interest for a number of applications, including trace gas sensing, thermal imaging, and free-space communications. Recently, there has been significant progress in developing a mid-IR photonics platform in Si, which is highly transparent in the mid-IR, due to the ease of fabrication and CMOS compatibility provided by the Si platform. Here, we discuss our group’s recent contributions to the field of silicon-based mid-IR photonics, including photonic crystal cavities in a Si membrane platform and grating-coupled high-quality factor ring resonators in a silicon-on-sapphire (SOS) platform. Since experimental characterization of microphotonic devices is especially challenging at the mid-IR, we also review our mid-IR characterization techniques in some detail. Additionally, pre- and post-processing techniques for improving device performance, such as resist reflow, Piranha clean/HF dip cycling, and annealing are discussed.

scholarly journals BaF2 Ridge Waveguide Operating at Mid-Infrared Wavelength

2021 ◽  
Vol 9 ◽  
Author(s):  
Yazhou Cheng ◽  
Xinbin Zhang ◽  
Hongxiao Song
Keyword(s):  
Ion Irradiation ◽  
Lattice Structure ◽  
Near Field ◽  
Annealing Treatment ◽  
Femtosecond Laser Ablation ◽  
Ridge Waveguide ◽  
Propagation Loss ◽  
Mid Infrared ◽  
Infrared Wavelength ◽  
Coupling System

We report on the fabrication of optical ridge waveguide in barium fluoride (BaF2) crystal by 15 MeV C5+ ions irradiation with femtosecond laser ablation. The near-field modal profile and propagation loss of the waveguide at mid-infrared wavelength 4 µm are investigated by using end-face coupling system. We implement a series of annealing treatment and it efficiently reduces the propagation loss of the waveguide. The confocal Raman spectra demonstrate that the lattice structure of BaF2 crystal does not change largely after C5+ ion irradiation.

Pbs/PbSrS multi-quantum well laser emitting in the mid-infrared wavelength region

1990 ◽  
Vol 26 (20) ◽  
pp. 1715 ◽  
Author(s):  
S. Takahashi ◽  
N. Koguchi ◽  
T. Chikyow ◽  
T. Kiyosawa ◽  
J. Fujiwara ◽  
...  
Keyword(s):  
Quantum Well ◽  
Wavelength Region ◽  
Mid Infrared ◽  
Infrared Wavelength ◽  
Quantum Well Laser ◽  
Multi Quantum Well

scholarly journals Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared

Nanophotonics ◽  
2014 ◽  
Vol 3 (4-5) ◽  
pp. 247-268 ◽  
Author(s):  
Lin Zhang ◽  
Anuradha M. Agarwal ◽  
Lionel C. Kimerling ◽  
Jurgen Michel
Keyword(s):  
Chalcogenide Glasses ◽  
Pulse Compression ◽  
Near Infrared ◽  
Frequency Comb ◽  
Group Iv ◽  
Critical Approach ◽  
Numerical Work ◽  
Mid Infrared ◽  
Sensing Applications ◽  
Silicon And Germanium

AbstractGroup IV photonics hold great potential for nonlinear applications in the near- and mid-infrared (IR) wavelength ranges, exhibiting strong nonlinearities in bulk materials, high index contrast, CMOS compatibility, and cost-effectiveness. In this paper, we review our recent numerical work on various types of silicon and germanium waveguides for octave-spanning ultrafast nonlinear applications. We discuss the material properties of silicon, silicon nitride, silicon nano-crystals, silica, germanium, and chalcogenide glasses including arsenic sulfide and arsenic selenide to use them for waveguide core, cladding and slot layer. The waveguides are analyzed and improved for four spectrum ranges from visible, near-IR to mid-IR, with material dispersion given by Sellmeier equations and wavelength-dependent nonlinear Kerr index taken into account. Broadband dispersion engineering is emphasized as a critical approach to achieving on-chip octave-spanning nonlinear functions. These include octave-wide supercontinuum generation, ultrashort pulse compression to sub-cycle level, and mode-locked Kerr frequency comb generation based on few-cycle cavity solitons, which are potentially useful for next-generation optical communications, signal processing, imaging and sensing applications.

scholarly journals Designing Mid-Infrared Gold-Based Plasmonic Slot Waveguides for CO2-Sensing Applications

Sensors ◽  
2021 ◽  
Vol 21 (8) ◽  
pp. 2669
Author(s):  
Parviz Saeidi ◽  
Bernhard Jakoby ◽  
Gerald Pühringer ◽  
Andreas Tortschanoff ◽  
Gerald Stocker ◽  
...  
Keyword(s):  
Figure Of Merit ◽  
Propagation Loss ◽  
Asymmetric Structure ◽  
Free Standing ◽  
Propagation Length ◽  
Mid Infrared ◽  
Sensing Applications ◽  
A Value ◽  
Standing Structure ◽  
Slot Waveguides

Plasmonic slot waveguides have attracted much attention due to the possibility of high light confinement, although they suffer from relatively high propagation loss originating from the presence of a metal. Although the tightly confined light in a small gap leads to a high confinement factor, which is crucial for sensing applications, the use of plasmonic guiding at the same time results in a low propagation length. Therefore, the consideration of a trade-off between the confinement factor and the propagation length is essential to optimize the waveguide geometries. Using silicon nitride as a platform as one of the most common material systems, we have investigated free-standing and asymmetric gold-based plasmonic slot waveguides designed for sensing applications. A new figure of merit (FOM) is introduced to optimize the waveguide geometries for a wavelength of 4.26 µm corresponding to the absorption peak of CO2, aiming at the enhancement of the confinement factor and propagation length simultaneously. For the free-standing structure, the achieved FOM is 274.6 corresponding to approximately 42% and 868 µm for confinement factor and propagation length, respectively. The FOM for the asymmetric structure shows a value of 70.1 which corresponds to 36% and 264 µm for confinement factor and propagation length, respectively.

Laser-tissue interaction with high-power fiber lasers operating in the mid-infrared wavelength region

2000 ◽  
Author(s):  
Mark C. Pierce ◽  
Stuart D. Jackson ◽  
Mark R. Dickinson ◽  
Paul S. Golding ◽  
Terence A. King ◽  
...  
Keyword(s):  
High Power ◽  
Fiber Lasers ◽  
Wavelength Region ◽  
Mid Infrared ◽  
Infrared Wavelength ◽  
Tissue Interaction ◽  
Laser Tissue Interaction
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