Simulation of Grazing-Incidence Synchrotron X-ray Topographic Images of Threading c+a Dislocations in 4H-SiC

2012 ◽  
Vol 1433 ◽  
Author(s):  
Fangzhen Wu ◽  
Shayan Byrappa ◽  
Huanhuan Wang ◽  
Yi Chen ◽  
Balaji Raghothamachar ◽  
...  
Keyword(s):  
Ray Tracing ◽  
Potassium Hydroxide ◽  
Grazing Incidence ◽  
Burgers Vector ◽  
X Ray ◽  
Edge Dislocations ◽  
Ray Tracing Simulation ◽  
Simulated Images ◽  
Non Destructive ◽  
Vector Magnitude

ABSTRACTSynchrotron X-ray topography (SXRT) of various geometries has been successfully utilized to image c+a dislocations in 4H-SiC crystals. Although molten potassium hydroxide(KOH) can be used to reveal the location of such dislocations, it is not possible to determine their senses or their Burgers vector magnitude. A simple, non-destructive method has been proposed to determine the Burgers vector of these c+a dislocations called the ray tracing simulation, which has been successfully implemented previously in revealing the dislocation sense and magnitude of micropipes, closed-core threading screw dislocations (TSDs) and threading edge dislocations (TEDs) in 4H-SiC. In this paper, grazing incidence topography is performed using the monochromatic beam for the horizontally cut wafers to record pyramidal reflections of 11-28 type. Ray tracing simulation has been successfully implemented to correlate the simulated images with experimental images which are discussed in the paper.

Studies of c-Axis Threading Screw Dislocations in Hexagonal SiC

2008 ◽  
Vol 1069 ◽  
Author(s):  
Yi Chen ◽  
Xianrong Huang ◽  
Ning Zhang ◽  
Govindhan Dhanaraj ◽  
Edward Sanchez ◽  
...  
Keyword(s):  
Ray Tracing ◽  
Grazing Incidence ◽  
Screw Dislocations ◽  
Burgers Vector ◽  
X Ray ◽  
Back Reflection ◽  
Partial Dislocations ◽  
Ray Tracing Simulation ◽  
Vector Magnitude

ABSTRACTIn our study, closed-core threading screw dislocations and micropipes were studied using synchrotron x-ray topography of various geometries. The Burgers vector magnitude of TSDs can be quantitatively determined from their dimensions in back-reflection x-ray topography, based on ray-tracing simulation and this has been verified by the images of elementary TSDs. Dislocation senses of closed-core threading screw dislocations and micropipes can be revealed by grazing-incidence x-ray topography. The threading screw dislocations can be converted into Frank partial dislocations on the basal planes and this has been confirmed by transmission synchrotron x-ray topography.

Influence of surface relaxation on the contrast of threading edge dislocations in synchrotron X-ray topographs under the condition of g · b = 0 and g · b × l = 0

2021 ◽  
Vol 54 (2) ◽  
Author(s):  
Hongyu Peng ◽  
Tuerxun Ailihumaer ◽  
Fumihiro Fujie ◽  
Zeyu Chen ◽  
Balaji Raghothamachar ◽  
...  
Keyword(s):  
Ray Tracing ◽  
Depth Profiling ◽  
Simulation Method ◽  
Surface Relaxation ◽  
X Ray ◽  
Relaxation Effects ◽  
Orientation Contrast ◽  
Relaxation Depth ◽  
Edge Dislocations ◽  
Ray Tracing Simulation

Residual contrast of threading edge dislocations is observed in synchrotron back-reflection X-ray topographs of 4H-SiC epitaxial wafers recorded using basal plane reflections where both g · b = 0 and g · b × l = 0. The ray-tracing simulation method based on the orientation contrast formation mechanism is applied to simulate images of such dislocations by applying surface relaxation effects. The simulated contrast features match the observed features on X-ray topographs, clearly demonstrating that the contrast is dominated by surface relaxation. Depth profiling indicates that the surface relaxation primarily takes place within a depth of 5 µm below the surface.

High-Resolution X-ray Topography of Dislocations in 4H-SiC Epilayers

2006 ◽  
Vol 911 ◽  
Author(s):  
Isaho Kamata ◽  
Hidekazu Tsuchida ◽  
William M Vetter ◽  
Michael Dudley
Keyword(s):  
Computer Simulation ◽  
High Resolution ◽  
Grazing Incidence ◽  
Crystal Defects ◽  
Recording Media ◽  
Simulated Image ◽  
Screw Dislocations ◽  
Burgers Vector ◽  
X Ray ◽  
Simulated Images

AbstractSilicon carbide (SiC) substrates and epilayers contain many crystal defects, such as micropipes, screw dislocations, threading edge dislocations (TEDs), basal plane dislocations (BPDs) and stacking faults. To investigate these defects, synchrotron radiation topography is frequently carried out. When the monochromatic synchrotron X-ray topography is taken by the grazing-incidence reflection geometry using 11-28 reflection, screw dislocations, TEDs and BPDs are simultaneously seen and shown as different topographic images [1]. Many studies of dislocations were reported using 11-28 reflections in 4H-SiC [1,2]. Topographic images of the dislocations have been analyzed by the ray-tracing method of computer simulation [3]. However, experimental images of dislocations were not fully matched to the fine structure of simulation images, because of a lack of resolution in recording media: conventional films and nuclear emulsion plates [3]. This time, we report obtaining high-resolution topographic images using a new recording medium, and compare results between the experiment and the computer simulation. Synchrotron topography in 11-28 reflection was carried out at SPring8 applying holography films as high-resolution recording media. The TED images are distinguished as four types, which have ribbon-like features with different rotating angles, through the use of the films. The four different TED images agree well with the computer simulated images which have been reported by Vetter et.al. taking into account of the different Burgers vector directions [3]. By comparing the three topographic images taken at g=-12-18, 11-28 and 2-1-18, we confirmed experimentally that the four types of TED images originated from the difference of Burgers vector directions. We also investigated high-resolution topographic images of elementary screw dislocations, micropipes, and BPDs in 4H-SiC epilayers. The experimental image of screw dislocation fairly matched with simulated image. The fine features in the experimental topographic images of micropipes and BPDs are also compared with the simulated images in detail. [1] T. Ohno, H. Yamaguchi, S. Kuroda, K. Kojima, T. Suzuki, K. Arai: J. cryst. Growth. Vol. 260 (2004) 209. [2] H. Tsuchida, T. Miyanagi, I. Kamata, T. Nakamura, R. Ishii, K. Nakayama and Y.Sugawara: Jpn. J. Appl. Phys. Vol. 25, (2005), L806-808. [3] W. Vetter, H. Tsuchida, I. Kamata, M. Dudley: J. Appl. Cryst. Vol. 38, (2005), 442-447.

Analysis of Dislocations in PVT-Grown 6H-SiC through Grazing-Incidence X-Ray Topographic Images and Ray-Tracing Simulation

2020 ◽  
Vol 98 (6) ◽  
pp. 133-145
Author(s):  
Qianyu Cheng ◽  
Tuerxun Ailihumaer ◽  
Hongyu Peng ◽  
Yafei Liu ◽  
Balaji Raghothamachar ◽  
...  
Keyword(s):  
Ray Tracing ◽  
Grazing Incidence ◽  
X Ray ◽  
Ray Tracing Simulation

Analysis of Dislocation Contrast in Synchrotron Grazing-incidence X-ray Topographs and Ray-tracing Simulation in Off-axis 4H-SiC Crystals

2021 ◽  
Vol 104 (7) ◽  
pp. 157-169
Author(s):  
Tuerxun Ailihumaer ◽  
Hongyu Peng ◽  
Yafei Liu ◽  
Qianyu Cheng ◽  
Zeyu Chen ◽  
...  
Keyword(s):  
Ray Tracing ◽  
Grazing Incidence ◽  
X Ray ◽  
Ray Tracing Simulation

Analysis of Dislocation Contrast in Synchrotron Grazing-incidence X-ray Topographs and Ray-tracing Simulation in Off-axis 4H-SiC Crystals

2021 ◽  
Vol MA2021-02 (34) ◽  
pp. 1007-1007
Author(s):  
Tuerxun Ailihumaer ◽  
Hongyu Peng ◽  
Yafei Liu ◽  
Qianyu Cheng ◽  
Zeyu Chen ◽  
...  
Keyword(s):  
Ray Tracing ◽  
Grazing Incidence ◽  
X Ray ◽  
Ray Tracing Simulation

Analysis of Dislocations in PVT-Grown 6H-SiC through Grazing-Incidence X-Ray Topographic Images and Ray-Tracing Simulation

2020 ◽  
Vol MA2020-02 (26) ◽  
pp. 1842-1842
Author(s):  
Qianyu Cheng ◽  
Tuerxun Ailihumaer ◽  
Hongyu Peng ◽  
Yafei Liu ◽  
Balaji Raghothamachar ◽  
...  
Keyword(s):  
Ray Tracing ◽  
Grazing Incidence ◽  
X Ray ◽  
Ray Tracing Simulation

Contrast of Basal Plane and Threading Edge Dislocations in 4H-SiC by X-Ray Topography in Grazing Incidence Geometry

2008 ◽  
Vol 600-603 ◽  
pp. 321-324 ◽  
Author(s):  
Hirofumi Matsuhata ◽  
Hirotaka Yamaguchi ◽  
Ichiro Nagai ◽  
Toshiyuki Ohno ◽  
Ryouji Kosugi ◽  
...  
Keyword(s):  
Basal Plane ◽  
Grazing Incidence ◽  
Incidence Geometry ◽  
Burgers Vector ◽  
X Ray ◽  
Substrate Wafer ◽  
G 11 ◽  
Edge Dislocations ◽  
Grazing Incidence Geometry ◽  
Monochromatic Synchrotron

Dislocations in a substrate wafer of 4H-SiC with an epi-layer were observed using technique of monochromatic synchrotron X-ray topography in a grazing incidence geometry. Six different Burgers vectors of basal plane dislocations and threading edge dislocations were identified by changing the Bragg reflections, and by analysis of images of dislocation. We identify some relations of the Burgers vector and the dislocation contrast observed for g=11 2 8. Some of these relationships are discussed in this report.

Investigation of Defect Formation in 4H-SiC(0001) and (000-1) Epitaxy

2008 ◽  
Vol 600-603 ◽  
pp. 267-272 ◽  
Author(s):  
Hidekazu Tsuchida ◽  
Isaho Kamata ◽  
Masahiro Nagano
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Defect Formation ◽  
Grazing Incidence ◽  
Microscopic Structure ◽  
Threading Dislocation ◽  
Simultaneous Generation ◽  
Burgers Vector ◽  
X Ray ◽  
Transmission Electron

Defect formation in 4H-SiC(0001) and (000-1) epitaxy is investigated by grazing incidence synchrotron reflection X-ray topography and transmission electron microscopy. Frank-type faults, which are terminated by four Frank partials with a 1/4[0001] type Burgers vector with the same sign on four different basal planes, are confirmed to be formed by conversion of a 1c threading edge dislocation (TSD) in the substrate as well as simultaneous generation of a 1c TSD during epitaxy. The collation between the topography appearance and the microscopic structure and the variety of Frank faults are shown. Formation of carrot defects and threading dislocation clusters are also investigated.

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