Time-Dependent Forming Characteristics in Pt/NiO/Pt Stack Structures for Resistive Random Access Memory

2012 ◽  
Vol 1430 ◽  
Author(s):  
Yusuke Nishi ◽  
Tatsuya Iwata ◽  
Daisuke Horie ◽  
Tsunenobu Kimoto
Keyword(s):  
Thin Films ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Time Dependent ◽  
Access Memory ◽  
Forming Process ◽  
Weakest Link ◽  
Link Theory ◽  
Nio Thin Film ◽  
Forming Characteristics

ABSTRACTConstant voltage Time-Dependent Forming (TDF) measurements in as-deposited Pt/NiO/Pt stack structures have been conducted. From TDF characteristics, formation of conductive filaments at forming process by applying voltage follows weakest link theory. Furthermore, weakest spots are almost randomly distributed in NiO thin films according to Poisson statistics, each of which can contribute conductive paths locally generated. A “percolating layer” in which the conductive filaments percolate by applying voltage may exist in the NiO thin film. The thickness of the layer is much smaller than that of NiO thin films.

Correlation Between Oxygen Composition and Electrical Properties in NiO Thin Films for Resistive Random Access Memory

2010 ◽  
Vol 1250 ◽  
Author(s):  
Yusuke Nishi ◽  
Tatsuya Iwata ◽  
Tsunenobu Kimoto
Keyword(s):  
Thin Films ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Resistance Switching ◽  
Admittance Spectroscopy ◽  
Low Oxygen ◽  
Access Memory ◽  
Switching Operation ◽  
Defect Levels

AbstractAdmittance spectroscopy measurement has been performed on NiOx thin films with various oxygen compositions (x=1.0-1.2) in order to characterize localized defect levels. The activation energy and concentration of localized defect levels in NiOx films with low oxygen composition (x≤1.07) are 120-170 meV and lower than 2×1019 cm-3, respectively. From I-V measurement of the Pt/NiOx/Pt structures, samples with high oxygen composition (x≥1.10) did not show resistance switching operation, while samples with low oxygen composition (x≤1.07) did. The best oxygen composition of NiOx thin films turned out to be 1.07 in order to realize repeatable and stable resistance switching operation.

Effects of Film Thickness on Resistive Switching Characteristics of ZnO Based ReRAM

2013 ◽  
Vol 721 ◽  
pp. 194-198 ◽  
Author(s):  
Jun Hua Xi ◽  
Xue Ping Chen ◽  
Hong Xia Li ◽  
Jun Zhang ◽  
Zhen Guo Ji
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Resistive Switching ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Zno Thin Films ◽  
Forming Process ◽  
Heavily Doped ◽  
Switching Characteristics ◽  
Unipolar Resistive Switching

ZnO thin films were deposited on heavily doped silicon wafer by DC magnetron sputtering and the Cu electrodes were evaporated on ZnO/ n+-Si by electric beam evaporation to get Cu/ZnO/n+-Si resistive random access memory (ReRAM). The forming, reset and set processes of the devices were investigated using filamentary model. The effects of film thickness on the crystalline structure of the ZnO thin films and the resistive switching characteristics of the fabricated devices were investigated. The diffraction peak intensity and crystal size increased with increasing film thickness, which shows better crystallization. Cu/ZnO/n+-Si structured device exhibits reversible and steady unipolar resistive switching behaviors. The film thickness had great effect on the forming process of the prepared devices, while the values of Vset increased and Vreset varied little with increasing the film thickness.

A Study on the Resistive Switching of La0.7Sr0.3MnO3 Film Using Spectromicroscopy

2014 ◽  
Vol 597 ◽  
pp. 184-187
Author(s):  
Hong Sub Lee ◽  
Kyung Mun Kang ◽  
Woo Je Han ◽  
Tae Won Lee ◽  
Chang Sun Park ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Perovskite Manganite ◽  
Access Memory ◽  
Forming Process ◽  
Promising Candidate ◽  
Interface Type

Resistive random access memory (ReRAM) is a promising candidate for next generation nonvolatile memory. La0.7Sr0.3.MnO3 (LSMO) of perovskite manganite family has a great deal of attention for ReRAM material because it makes resistive switching (RS) of interface type without a “forming process”. However, the full understanding of the electronic structure and RS mechanism of LSMO remains a challenging problem. Therefore, this study performed spectromicroscopic analysis to understand the relation between the change of electronic structure and RS characteristic. The results demonstrated the electron occupation by field-induced oxygen vacancies and strong correlation effects.

Effects of a Nb nanopin electrode on the resistive random-access memory switching characteristics of NiO thin films

Nanoscale ◽  
2018 ◽  
Vol 10 (28) ◽  
pp. 13443-13448 ◽  
Author(s):  
Yoonho Ahn ◽  
Hyun Wook Shin ◽  
Tae Hoon Lee ◽  
Woo-Hee Kim ◽  
Jong Yeog Son
Keyword(s):  
Thin Films ◽  
Bottom Electrode ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Memory Switching ◽  
Switching Characteristics

We report the effects of bottom electrode shapes on resistive random-access memory (RRAM) devices composed of Nb (bottom electrode)/NiO (dielectric)/Nb (top electrode) structures.

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