Interface Characterization of Metals and Metal-nitrides to Phase Change Materials
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ABSTRACTWe have investigated the interfacial contact properties of the CMOS compatible electrode materials W, TiW, Ta, TaN and TiN to doped-Sb2Te phase change material (PCM). This interface is characterized both in the amorphous and in the crystalline state of the doped-Sb2Te. The electrical nature of the interface is characterized by contact resistance measurements and is expressed in terms of specific interfacial contact resistance (ρC). These measurements are performed on four-terminal Kelvin Resistor test structures. Knowledge of the ρC is useful for selection of the electrode in the integration and optimization of the phase change memory cells.
2011 ◽
Vol 347-353
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pp. 2773-2776
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2016 ◽
2012 ◽
Vol 51
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pp. 031201
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2015 ◽
Vol 749
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pp. 415-419
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1995 ◽
Vol 117
(3)
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pp. 215-220
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