Microstructural characterization of GaAs-AlxGa1-xAs core-shell nanowires grown by Au-catalyst assisted MOVPE

2011 ◽  
Vol 1350 ◽  
Author(s):  
D. Altamura ◽  
I. Miccoli ◽  
P. Prete ◽  
N. Lovergine ◽  
L. Tapfer
Keyword(s):  
Reciprocal Lattice ◽  
Molar Fraction ◽  
Microstructural Characterization ◽  
Morphological Characterization ◽  
Lattice Points ◽  
Compositional Variation ◽  
Core Shell ◽  
Crystallographic Axis ◽  
Au Catalyst

ABSTRACTIn this work, we report on the microstructural and morphological characterization of III-V semiconductor nanowires (NWs) epitaxially grown on (111)B-GaAs substrates by Au-catalyst assisted metalorganic vapor phase epitaxy. As-grown dense (108-109 cm-2) arrays of few-micron long vertically-aligned (i.e. parallel to the <111> crystallographic axis) GaAs, AlxGa1-xAs and core-shell GaAs-AlxGa1-xAs NWs were investigated, carrying out HRXRD measurements on different (hkl) reflections and by recording reciprocal space maps (RSMs) around the materials (111) reciprocal lattice points (relps). We show that NW diffraction peaks are visible in the RSM by means of characteristic halos. In the case of GaAs NWs, the halo is located at the (111) relp indicating that the NWs are grown along the <111> direction and parallel to the <111> axis of the GaAs substrate. On the contrary, for AlxGa1-xAs NWs or intentional core-shell GaAs-AlxGa1-xAs NWs the halo is displaced (along the momentum transfer normal to the surface, Qz) with respect to the GaAs (111) relp due to the elastic lattice strain associated with the compositional variation, e.g. the Al molar fraction in the AlxGa1-xAs alloy, within the nanostructures.

Iron/Graphite Core-Shell Structured Nanoparticles Prepared by Annealing of Nanopowder

2005 ◽  
Vol 480-481 ◽  
pp. 469-476 ◽  
Author(s):  
B. David ◽  
N. Pizúrová ◽  
O. Schneeweiss ◽  
Petr Bezdička ◽  
I. Morjan ◽  
...  
Keyword(s):  
Magnetic Measurements ◽  
Iron Carbide ◽  
Iron Pentacarbonyl ◽  
Morphological Characterization ◽  
Core Shell ◽  
Shell Nanoparticles ◽  
Annealed Material ◽  
Prepared Material ◽  
Core Shell Nanoparticles

We present magnetic and morphological characterization of iron- and iron-carbide- based nanopowder obtained by the laser synthesis from sensitized gas phase mixture containing acetylene and iron pentacarbonyl vapors. The analysis was performed on the as-prepared material and the annealed material. The results of TEM, XRD, Mössbauer and magnetic measurements are reported. Phase transformations taking place during annealing of the nanopowder when core-shell nanoparticles appear are discussed.

scholarly journals Single-step Au-catalysed synthesis and microstructural characterization of core–shell Ge/In–Te nanowires by MOCVD

2017 ◽  
Vol 6 (1) ◽  
pp. 29-35 ◽  
Author(s):  
Raimondo Cecchini ◽  
Simone Selmo ◽  
Claudia Wiemer ◽  
Enzo Rotunno ◽  
Laura Lazzarini ◽  
...  
Keyword(s):  
Microstructural Characterization ◽  
Single Step ◽  
Core Shell

Morphological Characterization of Mycobacteriophage R1

1974 ◽  
Vol 32 ◽  
pp. 254-255
Author(s):  
B. L. Soloff ◽  
T. A. Rado
Keyword(s):  
Carbon Source ◽  
Stationary Phase ◽  
Growth Phase ◽  
Minimal Medium ◽  
Morphological Characterization ◽  
Logarithmic Growth Phase ◽  
Complete Lysis ◽  
Lysogenic Culture ◽  
Logarithmic Growth

Mycobacteriophage R1 was originally isolated from a lysogenic culture of M. butyricum. The virus was propagated on a leucine-requiring derivative of M. smegmatis, 607 leu−, isolated by nitrosoguanidine mutagenesis of typestrain ATCC 607. Growth was accomplished in a minimal medium containing glycerol and glucose as carbon source and enriched by the addition of 80 μg/ ml L-leucine. Bacteria in early logarithmic growth phase were infected with virus at a multiplicity of 5, and incubated with aeration for 8 hours. The partially lysed suspension was diluted 1:10 in growth medium and incubated for a further 8 hours. This permitted stationary phase cells to re-enter logarithmic growth and resulted in complete lysis of the culture.

Microstructural characterization of CoPtCr/Cr thin film disks by cross-section TEM and elongated probe micro-diffraction

1991 ◽  
Vol 49 ◽  
pp. 762-763
Author(s):  
M.A. Parker ◽  
K.E. Johnson ◽  
C. Hwang ◽  
A. Bermea
Keyword(s):  
Magnetic Recording ◽  
Electron Probe ◽  
Microstructural Characterization ◽  
Crystallographic Structure ◽  
Recording Media ◽  
Layer By Layer ◽  
Cross Sectional ◽  
New Techniques ◽  
Polished Side

We have reported the dependence of the magnetic and recording properties of CoPtCr recording media on the thickness of the Cr underlayer. It was inferred from XRD data that grain-to-grain epitaxy of the Cr with the CoPtCr was responsible for the interaction observed between these layers. However, no cross-sectional TEM (XTEM) work was performed to confirm this inference. In this paper, we report the application of new techniques for preparing XTEM specimens from actual magnetic recording disks, and for layer-by-layer micro-diffraction with an electron probe elongated parallel to the surface of the deposited structure which elucidate the effect of the crystallographic structure of the Cr on that of the CoPtCr.XTEM specimens were prepared from magnetic recording disks by modifying a technique used to prepare semiconductor specimens. After 3mm disks were prepared per the standard XTEM procedure, these disks were then lapped using a tripod polishing device. A grid with a single 1mmx2mm hole was then glued with M-bond 610 to the polished side of the disk.

Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

1987 ◽  
Vol 45 ◽  
pp. 326-327
Author(s):  
A.K. Rai ◽  
A.K. Petford-Long ◽  
A. Ezis ◽  
D.W. Langer
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Microstructural Characterization ◽  
Almost Everywhere ◽  
Spacer Layer ◽  
Good Contact ◽  
The Relationship ◽  
Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

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