Switching speed in Resistive Random Access Memories (RRAMS) based on plastic semiconductor

2011 ◽  
Vol 1337 ◽  
Author(s):  
Paulo F. Rocha ◽  
Henrique L. Gomes ◽  
Asal Kiazadeh ◽  
Qian Chen ◽  
Dago M. de Leeuw ◽  
...  
Keyword(s):  
Layer Structure ◽  
Random Access ◽  
Exponential Behavior ◽  
Switching Speed ◽  
Switching Event ◽  
Long Period ◽  
Double Layer Structure ◽  
Current Voltage ◽  
Voltage Ramp ◽  
Current Voltage Characteristics

ABSTRACTThis work addresses non-volatile memories based on metal-oxide polymer diodes. We make a thorough investigation into the static and dynamic behavior. Current-voltage characteristics with varying voltage ramp speed demonstrate that the internal capacitive double-layer structure inhibits the switching at high ramp rates (typical 1000 V/s). This behavior is explained in terms of an equivalent circuit.It is also reported that there is not a particular threshold voltage to induce switching. Voltages below a particular threshold can still induce switching when applied for a long period of time. The time to switch is longer the lower is the applied voltage and follows an exponential behavior. This suggests that for a switching event to occur a certain amount of charge is required.

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

First-Principles Modeling for Current-Voltage Characteristics of Resistive Random Access Memories

2013 ◽  
Vol 1562 ◽  
Author(s):  
Takehide Miyazaki ◽  
Hisao Nakamura ◽  
Kengo Nishio ◽  
Hisashi Shima ◽  
Hiroyuki Akinaga ◽  
...  
Keyword(s):  
First Principles ◽  
Oxygen Vacancies ◽  
Electrode Materials ◽  
Random Access ◽  
Model Systems ◽  
Electronic Coupling ◽  
Current Ratio ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Non Equilibrium Green’S Function

ABSTRACTWe present results of first-principles non-equilibrium Green’s function calculations for current-voltage (IV) characteristics of the electrode/HfO2/electrode model systems. In order to investigate the effect of the electrode materials on the IV characteristics, we considered two transition metals for electrode, Ta and W, which are both body-centered-cubic elemental metals but have different valence numbers. We simulated the ON state by placing oxygen vacancies in the HfO2 layer while the OFF state was modeled with HfO2 without oxygen vacancies. At the OFF state, no electric current flowed for -1 V up to +1 V, as expected. At the ON state, however, we found that the absolute current for the Ta electrode was twice as large as that for the W electrode. The analysis of the IV characteristics shows that the electronic coupling between Ta and HfO2 is substantially stronger than that between W and HfO2. Our study demonstrates the importance of the matching between electrode and insulator materials to achieve a high ON- to OFF-current ratio in ReRAMs at a low bias.

A novel n+-polysilicon on n-silicon iso-type diode

1996 ◽  
Vol 74 (S1) ◽  
pp. 186-188
Author(s):  
S. Mohajerzadeh ◽  
C. R. Selvakumar
Keyword(s):  
Energy Barrier ◽  
Exponential Behavior ◽  
Si Substrates ◽  
Current Voltage ◽  
Polysilicon Films ◽  
Current Voltage Characteristics ◽  
Film Substrate ◽  
Phosphorus Doped

We report the results of fabricating n+-n iso-type diodes using in-situ phosphorus–doped polysilicon films on n-type 1 Ω cm <100> Si substrates. The electrical characteristics of this structure give evidence of the presence of an energy barrier at the film–substrate interface reminiscent of Schottky-barrier diodes. The current–voltage characteristics show exponential behavior over three decades of current. An ideality factor of 1.2 is extracted from the experimental results. An energy barrier height of about 0.2 eV is obtained from the current–temperature analysis.

Poly-NiO/Nb:SrTiO3 Based Resistive Switching Device for Nonvolatile Random Access Memory

2012 ◽  
Vol 605-607 ◽  
pp. 1944-1947
Author(s):  
Cheng Hu ◽  
Yong Dan Zhu
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Carrier Injection ◽  
Forming Process ◽  
Switching Characteristic ◽  
Bipolar Resistive Switching ◽  
Retention Characteristic ◽  
Injection Process ◽  
Current Voltage ◽  
Current Voltage Characteristics

The bipolar resistive switching characteristic of Ag/poly-NiO/Nb:SrTiO3/In device has been investigated in this letter. The current-voltage characteristics of the device shows reproducible and pronounced bipolar resistive switching after 2V forming process and the resistive switching ratio RHRS/RLRS can reach 104 at the read voltage -0.5V. Multilevel memories can be realized by changing the max reverse voltages and show well retention characteristic even after several sweeping cycles. The results have been discussed in terms of carrier injection process via defects at the interface of the poly-NiO and Nb:SrTiO3.

Current-Voltage Characteristic of C-RAM Nano-Cell-Element

2007 ◽  
Vol 121-123 ◽  
pp. 591-594
Author(s):  
Bo Liu ◽  
Zhi Tang Song ◽  
Song Lin Feng ◽  
Bomy Chen
Keyword(s):  
Focused Ion Beam ◽  
Bottom Electrode ◽  
Ion Beam ◽  
Random Access ◽  
Access Memory ◽  
Cell Element ◽  
Current Voltage ◽  
Beam Method ◽  
Current Voltage Characteristics ◽  
Contact Size

Nano-cell-elements of chalcogenide random access memory (C-RAM) based on Ge2Sb2Te5 films have been successively fabricated by using the focused ion beam method. The minimum contact size between the Ge2Sb2Te5 phase change film and bottom electrode film in the nano-cell-element is in diameter of 90nm. The current-voltage characteristics of the C-RAM cell element are studied using the home-made current-voltage tester in our laboratory. The minimum SET current of about 0.3mA is obtained.

Influence of layer structure on the current-voltage characteristics of Si∕SiGe interband tunneling diodes

2004 ◽  
Vol 96 (7) ◽  
pp. 3848-3851 ◽  
Author(s):  
E. Khorenko ◽  
W. Prost ◽  
F.-J. Tegude ◽  
M. Stoffel ◽  
R. Duschl ◽  
...  
Keyword(s):  
Layer Structure ◽  
Tunneling Diodes ◽  
Current Voltage ◽  
Interband Tunneling ◽  
Current Voltage Characteristics
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