Characterization of Green Laser Crystallized GeSi Thin Films

2011 ◽  
Vol 1321 ◽  
Author(s):  
Balaji Rangarajan ◽  
Ihor Brunets ◽  
Peter Oesterlin ◽  
Alexey Y. Kovalgin ◽  
Jurriaan Schmitz

ABSTRACTGreen laser crystallization of a-Ge0.85Si0.15 films deposited using Low Pressure Chemical Vapour Deposition is studied. Large grains of 8x2 μm2 size were formed using a location-controlled approach. Characterization is done using Scanning Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron Spectroscopy and X-Ray Diffraction.

2005 ◽  
Vol 873 ◽  
Author(s):  
Joachim Bill ◽  
Peter Gerstel ◽  
Rudolf C. Hoffmann ◽  
Lars P. H. Jeurgens ◽  
Peter Lipowsky ◽  
...  

AbstractWithin this paper the suitability of amino acids and dipeptides as structure-directing agents is discussed. According to that bio-inspired approach these biomolecules were investigated with respect to the evolution of zinc oxide-based architectures. Those small molecules are able to trigger the morphology of these materials ranging from grain-like via two up to three dimensional features. Besides morphological aspects the structural characterization of these solids by means of electron and atomic force microscopy as well as by photoelectron spectroscopy and X-ray diffraction are discussed in order to extract the function of the biomolecules with regard to the formation of the inorganic phases.


2003 ◽  
Vol 780 ◽  
Author(s):  
C. Essary ◽  
V. Craciun ◽  
J. M. Howard ◽  
R. K. Singh

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.


2013 ◽  
Vol 28 (2) ◽  
pp. 68-71 ◽  
Author(s):  
Thomas N. Blanton ◽  
Debasis Majumdar

In an effort to study an alternative approach to make graphene from graphene oxide (GO), exposure of GO to high-energy X-ray radiation has been performed. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM) have been used to characterize GO before and after irradiation. Results indicate that GO exposed to high-energy radiation is converted to an amorphous carbon phase that is conductive.


2004 ◽  
Vol 831 ◽  
Author(s):  
Phanikumar Konkapaka ◽  
Huaqiang Wu ◽  
Yuri Makarov ◽  
Michael G. Spencer

ABSTRACTBulk GaN crystals of dimensions 8.5 mm × 8.5 mm were grown at growth rates greater than 200μm/hr using Gallium Vapor Transport technique. GaN powder and Ammonia were used as the precursors for growing bulk GaN. Nitrogen is used as the carrier gas to transport the Ga vapor that was obtained from the decomposition of GaN powder. During the process, the source GaN powder was kept at 1155°C and the seed at 1180°C. Using this process, it was possible to achieve growth rates of above 200 microns/hr. The GaN layers thus obtained were characterized using X-Ray diffraction [XRD], scanning electron microscopy [SEM], and atomic force microscopy [AFM]. X-ray diffraction patterns showed that the grown GaN layers are single crystals oriented along c direction. AFM studies indicated that the dominant growth mode was dislocation mediated spiral growth. Electrical and Optical characterization were also performed on these samples. Hall mobility measurements indicated a mobility of 550 cm2/V.s and a carrier concentration of 6.67 × 1018/cm3


2016 ◽  
Vol 689 ◽  
pp. 55-59
Author(s):  
Serge Zhuiykov

Electrical properties and morphology of orthorhombic β–WO3 nano-flakes with thickness of ~7-9 nm were investigated at the nanoscale using energy dispersive X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and current sensing force spectroscopy atomic force microscopy (CSFS-AFM, or PeakForce TUNATM). CSFS-AFM analysis established good correlation between the topography of the developed nanostructures and various features of WO3 nano-flakes synthesized via a two-step sol-gel-exfoliation method. It was determined that β–WO3 nano-flakes annealed at 550°C possess distinguished and exceptional thickness-dependent properties in comparison with the bulk, micro- and nano-structured WO3 synthesized at alternative temperatures.


2015 ◽  
Vol 752-753 ◽  
pp. 1379-1383
Author(s):  
M.I. Maksud ◽  
Mohd Sallehuddin Yusof ◽  
Zaidi Embong

The purpose of this paper is to study a ink surface morphology, quantify the chemical composition involved in processing of graphite ink printed by flexographic printing. The methodology is to use surface sensitive technique, X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) and Field Emission Scanning Electron Microscopy (FESEM). As a finding we successfully achieved 25 micron lines array using PDMS printing plate. The Originality and value of this work is surface sensitive techniques like XPS, AFM and FESEM were exclusively used in order to characterize graphite inks printed by flexographic method, using PDMS printing plate.


2013 ◽  
Vol 20 (01) ◽  
pp. 1350006 ◽  
Author(s):  
PARTHASARATHI BERA ◽  
H. SEENIVASAN ◽  
K. S. RAJAM

Co–W alloy coatings were deposited with direct current (DC) and pulse current (PC) electrodeposition methods using gluconate bath at pH5 and characterized by X-ray diffraction, field emission scanning electron microscopy, atomic force microscopy, differential scanning calorimetry (DSC) and X-ray photoelectron spectroscopy (XPS). DSC studies hint at the possibility of formation of metallic glasses. Detailed XPS studies of these alloy coatings have been carried out to compare elemental states and composition of Co and W in DC and PC electrodeposited alloys. DC-plated alloy has significant amount of Co and W metal along with their respective oxidized species. In contrast, mainly oxidized metals are present in the following layers of as-deposited coatings prepared with PC plating. Concentration of Co metal is observed to increase during sputtering, whereas there is no change in W6+ concentration. Microhardness measurement of all the Co–W coatings shows higher hardness compared to Co metal and 1:1 and 1:4 PC electrodeposited coatings show little higher hardness compared to 1:2 PC electrodeposited coating.


2006 ◽  
Vol 2006 ◽  
pp. 1-6 ◽  
Author(s):  
Florian Voigts ◽  
Tanja Damjanovic ◽  
Günter Borchardt ◽  
Christos Argirusis ◽  
Wolfgang Maus-Friedrichs

We present a simple and highly reproductive method for the preparation of thin films consisting of strontium titanate nanoparticles. The films are produced by spin coating of a sol on silicon targets and subsequent annealing under ambient conditions. Analysis by atomic force microscopy shows particles with typical sizes between 10 nm and 50 nm. X-ray photoelectron spectroscopy displays a stoichiometry of the films as anticipated from preliminary experiments with strontium titanate single crystals. Metastable-induced electron spectroscopy and ultraviolet photoelectron spectroscopy are used as tools to give evidence to the similar electronic properties of nanoparticle film and single crystal. These results support the prospect for an application of the nanoparticle films as high temperature oxygen sensor with superior properties.


2001 ◽  
Vol 08 (01n02) ◽  
pp. 43-50 ◽  
Author(s):  
M. KONO ◽  
X. SUN ◽  
R. LI ◽  
K. C. WONG ◽  
K. A. R. MITCHELL ◽  
...  

X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and scanning electron microscopy (SEM) have been used to characterize surfaces of aluminum which have been pretreated by mechanical polishing, acid etching and alkaline etching, as well as given subsequent exposures to air and water. These surfaces can differ markedly with regard to their chemical compositions and topographical structures. Characterizations of these surfaces after exposures to three organosilanes, γ-GPS, BTSE and γ-APS, indicate that the amount of silane adsorbed in each case shows a tendency to increase both with the number of OH groups detected at the oxidized aluminum and with the surface roughness. The XPS data are consistent with the adhesion of γ-APS occurring through H bonding, especially via NH3+ groups.


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