Electronic Structure of O-vacancy in High-k Dielectrics and Oxide Semiconductors
Keyword(s):
High K
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ABSTRACTFirst-principles density functional calculations are performed to investigate the electronic properties of O-vacancy defects in high-k HfO2, Si/HfO2 interface, and amorphous oxide semiconductors. The role of O-vacancy in device performance is discussed by comparing the results of the GGA, hybrid density functional, and quasiparticle energy calculations.
2020 ◽
Vol 22
(28)
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pp. 16244-16257
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2014 ◽
Vol 687-691
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pp. 4311-4314
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2003 ◽
Vol 107
(44)
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pp. 9463-9478
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2004 ◽
Vol 108
(27)
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pp. 9449-9455
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2014 ◽
Vol 16
(40)
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pp. 22299-22308
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