Sharp Silicon Nano-Needles Based on Boron Etch-Stop in TMAH Solutions

2011 ◽  
Vol 1301 ◽  
Author(s):  
Sheping Yan ◽  
Yang Xu ◽  
Junyi Yang ◽  
Huiquan Wang ◽  
Zhonghe Jin ◽  
...  

ABSTRACTOperations on biological living cells and molecular devices have driven research towards implementation of high-aspect-ratio nano-needles. However, current nano-needle fabrication is complicated to control the sizes and angles. In this work, we develop a simple method to fabricate repeatable and integrated circuit (IC)-compatible sharp silicon nano-needles based on boron etch-stop in tetramethyl ammonium hydroxide (TMAH) solutions, and the needle angles can be accurately controlled. An analytical model is proposed to efficiently predict the needle sizes and explain the etching evolution of silicon nano-needles.

2013 ◽  
Vol 284 ◽  
pp. 372-378 ◽  
Author(s):  
Yuncan Ma ◽  
An Pan ◽  
Jinhai Si ◽  
Tao Chen ◽  
Feng Chen ◽  
...  

2006 ◽  
Vol 05 (06) ◽  
pp. 815-819 ◽  
Author(s):  
HIROFUMI TANAKA ◽  
PAUL S. WEISS ◽  
MARK W. HORN

A simple method for fabricating periodic arrays of high aspect ratio (1:20) standing nanorods on silicon substrates is described. It is based on shadow deposition onto periodically arranged arrays of mini-rods on a rotating sample stage. Consequently, such nanostructures can be prepared on relatively large areas and at low cost, making the method suitable for industrial applications.


2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Daisuke Matsumoto ◽  
Ramachandra Rao Sathuluri ◽  
Yoshio Kato ◽  
Yaron R. Silberberg ◽  
Ryuzo Kawamura ◽  
...  

2019 ◽  
Vol 2019 ◽  
pp. 1-12
Author(s):  
Jianhong Gao ◽  
Xiaoxiang Yang ◽  
Lihong Huang

Some fiber types have a high aspect ratio and it is very difficult to predict their composites using traditional finite element (FE) modeling. In this study, an FE model was developed to predict the anisotropy of composites reinforced by short aramid fibers. Three fiber distribution types were studied as follows: perfectly aligned, normally distributed, and randomly distributed fibers. The elastic constants were obtained, and, for different alignment angles and parameters in the fiber orientation distribution function, their numerical results were compared to those of the Mori–Tanaka model. Good agreement was obtained; thus, the employed FE model is an excellent and simple method to predict the isotropy and anisotropy of a composite with high-aspect-ratio fibers. Therefore, the FE model was employed to predict the orientation distribution of a composite fiber with a nonlinear matrix. The predicted and experimental results agree well.


2003 ◽  
Vol 76 (3) ◽  
pp. 385-396 ◽  
Author(s):  
V.N. Tokarev ◽  
J. Lopez ◽  
S. Lazare ◽  
F. Weisbuch

Micromachines ◽  
2021 ◽  
Vol 12 (8) ◽  
pp. 991
Author(s):  
Michael Huff

This paper reviews the recent advances in reaction-ion etching (RIE) for application in high-aspect-ratio microfabrication. High-aspect-ratio etching of materials used in micro- and nanofabrication has become a very important enabling technology particularly for bulk micromachining applications, but increasingly also for mainstream integrated circuit technology such as three-dimensional multi-functional systems integration. The characteristics of traditional RIE allow for high levels of anisotropy compared to competing technologies, which is important in microsystems device fabrication for a number of reasons, primarily because it allows the resultant device dimensions to be more accurately and precisely controlled. This directly leads to a reduction in development costs as well as improved production yields. Nevertheless, traditional RIE was limited to moderate etch depths (e.g., a few microns). More recent developments in newer RIE methods and equipment have enabled considerably deeper etches and higher aspect ratios compared to traditional RIE methods and have revolutionized bulk micromachining technologies. The most widely known of these technologies is called the inductively-coupled plasma (ICP) deep reactive ion etching (DRIE) and this has become a mainstay for development and production of silicon-based micro- and nano-machined devices. This paper will review deep high-aspect-ratio reactive ion etching technologies for silicon, fused silica (quartz), glass, silicon carbide, compound semiconductors and piezoelectric materials.


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