Routes towards large area, low pressure nanodiamond growth via pulsed microwave linear antenna plasma chemistry

2011 ◽  
Vol 1282 ◽  
Author(s):  
Michael Liehr ◽  
František Fendrych ◽  
Andrew Taylor ◽  
Miloš Nesládek
Keyword(s):  
Substrate Temperature ◽  
Continuous Wave ◽  
Plasma Chemistry ◽  
Diamond Growth ◽  
Linear Antenna ◽  
Large Area ◽  
Processing Technologies ◽  
High Repetition ◽  
Wafer Processing ◽  
Up Scaling

ABSTRACTCurrent experimental configurations for MW PECVD diamond growth do not allow simple up-scaling towards large areas, which is essential for microelectronic industries and other applications. Another important issue is the reduction of the substrate temperature during diamond growth to enhance the compatibility with wafer processing technologies. Such advantages are provided by MW-linear antenna (LA) plasma applicators, allowing a scalable concept for diamond growing plasmas. In the present work we introduce a novel construction of LA MW applicators designed for nanodiamond growth by using plasmas ranging from continuous wave (CW) to high repetition rates pulsed modes (up to 20 kHz) which advantages are discussed in detail.

Low temperature diamond growth by linear antenna plasma CVD over large area

2012 ◽  
Vol 249 (12) ◽  
pp. 2600-2603 ◽  
Author(s):  
Tibor Izak ◽  
Oleg Babchenko ◽  
Marian Varga ◽  
Stepan Potocky ◽  
Alexander Kromka
Keyword(s):  
Low Temperature ◽  
Diamond Growth ◽  
Linear Antenna ◽  
Plasma Cvd ◽  
Large Area

Novel high frequency pulsed MW-linear antenna plasma-chemistry: Routes towards large area, low pressure nanodiamond growth

2011 ◽  
Vol 20 (4) ◽  
pp. 613-615 ◽  
Author(s):  
Andrew Taylor ◽  
František Fendrych ◽  
Ladislav Fekete ◽  
Jan Vlček ◽  
Vladimíra Řezáčová ◽  
...  
Keyword(s):  
High Frequency ◽  
Plasma Chemistry ◽  
Low Pressure ◽  
Linear Antenna ◽  
Large Area

Precursor gas composition optimisation for large area boron doped nano-crystalline diamond growth by MW-LA-PECVD

Carbon ◽  
2018 ◽  
Vol 128 ◽  
pp. 164-171 ◽  
Author(s):  
A. Taylor ◽  
P. Ashcheulov ◽  
P. Hubík ◽  
L. Klimša ◽  
J. Kopeček ◽  
...  
Keyword(s):  
Diamond Growth ◽  
Gas Composition ◽  
Large Area ◽  
Boron Doped ◽  
Nano Crystalline

Terahertz continuous-wave large-area traveling-wave photomixers on high-energy low-dose ion-implanted GaAs

2007 ◽  
Vol 90 (17) ◽  
pp. 171109 ◽  
Author(s):  
E. A. Michael ◽  
I. Cámara Mayorga ◽  
R. Güsten ◽  
A. Dewald ◽  
R. Schieder
Keyword(s):  
Traveling Wave ◽  
Low Dose ◽  
Continuous Wave ◽  
High Energy ◽  
Large Area ◽  
Ion Implanted

Large-area epitaxial CdTe(100) films grown on GaAs(100) substrates: MBE growth and substrate temperature effect

2021 ◽  
Author(s):  
Younghun Hwang ◽  
Van Quang Ngugen ◽  
Jin San Choi ◽  
Sujung Park ◽  
Shinuk Cho ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Temperature Effect ◽  
Large Area ◽  
Mbe Growth

Large-area microstructured photomixer as scannable detector of continuous-wave terahertz radiation

2012 ◽  
Vol 29 (12) ◽  
pp. 3254 ◽  
Author(s):  
Armaghan Eshaghi ◽  
Mahmoud Shahabadi ◽  
Lukas Chrostowski ◽  
Saeid Kamal
Keyword(s):  
Terahertz Radiation ◽  
Continuous Wave ◽  
Large Area

Apparatus for low-temperature growth of diamond-containing films

1989 ◽  
Vol 4 (5) ◽  
pp. 1243-1245 ◽  
Author(s):  
P. H. Fang ◽  
J. H. Kinnier
Keyword(s):  
Substrate Temperature ◽  
Electronic Devices ◽  
Silicon Crystal ◽  
Discharge Voltage ◽  
Diamond Growth ◽  
Diamond Like Carbon ◽  
Hydrocarbon Gases ◽  
Temperature Growth ◽  
Hot Filament ◽  
Deposited Film

In current processes of diamond growth, the substrate temperature is in general around 600–900 °C. In the case of diamond-like carbon, the substrate temperature is lower, around 25–200 °C. There are many superior properties of diamond compared with diamond-like carbon; however, the high temperature requirement to grow diamond precludes many technologically important substrate materials such as zinc sulfide for an infrared window or electronic devices on which protective diamond layers are to be coated. The present approach is a hot filament DC glow discharge of hydrocarbon gases. A graphite hot filament cathode is inserted in a discharge cylinder tube anode. The discharge voltage is in the range of 50 to 250 volts at a methane gas pressure of about 100 microns. A negative biased voltage of 100 volts is applied between the cathode and the substrate. A magnetic field of 1 kG is applied near the cathode-anode assembly. At a substrate temperature of 200–400 °C, the deposited film on silicon crystal is confirmed by an electron diffraction pattern to consist of microcrystalline diamond.

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