Radiation-induced Chemical Disorder in Covalent Materials

2011 ◽  
Vol 1298 ◽  
Author(s):  
Manabu Ishimaru ◽  
Yanwen Zhang ◽  
William J. Weber
Keyword(s):  
Electron Microscopy ◽  
Crystalline State ◽  
Distribution Functions ◽  
Atomic Scale ◽  
Radial Distribution Functions ◽  
Transmission Electron ◽  
Chemical Disorder ◽  
Radiation Induced ◽  
Means Of Transmission ◽  
Amorphous Sic

ABSTRACTChemical disorder in ion-irradiated SiC and GaN has been examined by means of transmission electron microscopy. Radial distribution functions obtained by a quantitative analysis of electron diffraction intensities revealed that homonuclear bonds, which do not exist in the crystalline state, are formed in both ion-irradiated specimens. The origin of the homonuclear bonds is quite different between SiC and GaN. The constitute elements mix on the atomic-scale in amorphous SiC, while phase separation induced by irradiation is attributed to the formation of self-bonded Ga atomic pairs in amorphous/nanocrystalline GaN.

HREM of Electron Irradiated Quartz

1992 ◽  
Vol 279 ◽  
Author(s):  
L. C. Qin ◽  
L. W. Hobbs
Keyword(s):  
Electron Diffraction ◽  
Radial Distribution ◽  
Electron Irradiation ◽  
Crystalline State ◽  
Distribution Functions ◽  
Dynamic Evolution ◽  
Radial Distribution Functions ◽  
Transmission Electron ◽  
Electron Microscopes

ABSTRACTIn situ electron irradiation has been carried out in transmission electron microscopes to monitor the dynamic evolution of α-quartz during the transition to the metamict state from the crystalline state. Crystals of different orientations were examined. HREM images were digitized and Fourier transformed to monitor degradation of periodicities. The final uniform metamict structure was characterized by radial distribution functions obtained from energy-filtered electron diffraction.

Ultrastructural Analysis of the Salivary Glands of Gromphadorhina Portentosa (Schaum)

1977 ◽  
Vol 35 ◽  
pp. 638-639
Author(s):  
P.J. Dailey
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Salivary Glands ◽  
Secretory Vesicles ◽  
The Past ◽  
Transmission Electron ◽  
Means Of Transmission ◽  
Gromphadorhina Portentosa ◽  
Scanning Electron ◽  
Topographical Relief

The structure of insect salivary glands has been extensively investigated during the past decade; however, none have attempted scanning electron microscopy (SEM) in ultrastructural examinations of these secretory organs. This study correlates fine structure by means of SEM cryofractography with that of thin-sectioned epoxy embedded material observed by means of transmission electron microscopy (TEM).Salivary glands of Gromphadorhina portentosa were excised and immediately submerged in cold (4°C) paraformaldehyde-glutaraldehyde fixative1 for 2 hr, washed and post-fixed in 1 per cent 0s04 in phosphosphate buffer (4°C for 2 hr). After ethanolic dehydration half of the samples were embedded in Epon 812 for TEM and half cryofractured and subsequently critical point dried for SEM. Dried specimens were mounted on aluminum stubs and coated with approximately 150 Å of gold in a cold sputtering apparatus.Figure 1 shows a cryofractured plane through a salivary acinus revealing topographical relief of secretory vesicles.

Annealing Of Radiation Damage in Tungsten

1970 ◽  
Vol 28 ◽  
pp. 412-413
Author(s):  
Robert C. Rau ◽  
John Moteff
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Radiation Damage ◽  
Thermal Annealing ◽  
Neutron Fluence ◽  
Dislocation Loops ◽  
Defect Clusters ◽  
Polycrystalline Tungsten ◽  
Transmission Electron ◽  
Radiation Induced

Transmission electron microscopy has been used to study the thermal annealing of radiation induced defect clusters in polycrystalline tungsten. Specimens were taken from cylindrical tensile bars which had been irradiated to a fast (E > 1 MeV) neutron fluence of 4.2 × 1019 n/cm2 at 70°C, annealed for one hour at various temperatures in argon, and tensile tested at 240°C in helium. Foils from both the unstressed button heads and the reduced areas near the fracture were examined.Figure 1 shows typical microstructures in button head foils. In the unannealed condition, Fig. 1(a), a dispersion of fine dot clusters was present. Annealing at 435°C, Fig. 1(b), produced an apparent slight decrease in cluster concentration, but annealing at 740°C, Fig. 1(C), resulted in a noticeable densification of the clusters. Finally, annealing at 900°C and 1040°C, Figs. 1(d) and (e), caused a definite decrease in cluster concentration and led to the formation of resolvable dislocation loops.

Electron Microscopy Studies of The Chemistry And Microstructure of BaF2 / YBa2Cu3O7-x Thin Films

1994 ◽  
Vol 52 ◽  
pp. 796-797
Author(s):  
J. L. Lee ◽  
C. A. Weiss ◽  
R. A. Buhrman ◽  
J. Silcox
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Transmission Electron Microscope ◽  
Atomic Scale ◽  
Island Growth ◽  
Multilayer Systems ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Mgo Substrate

BaF2 thin films are being investigated as candidates for use in YBa2Cu3O7-x (YBCO) / BaF2 thin film multilayer systems, given the favorable dielectric properties of BaF2. In this study, the microstructural and chemical compatibility of BaF2 thin films with YBCO thin films is examined using transmission electron microscopy and microanalysis. The specimen was prepared by using laser ablation to first deposit an approximately 2500 Å thick (0 0 1) YBCO thin film onto a (0 0 1) MgO substrate. An approximately 7500 Å thick (0 0 1) BaF2 thin film was subsequendy thermally evaporated onto the YBCO film.Images from a VG HB501A UHV scanning transmission electron microscope (STEM) operating at 100 kV show that the thickness of the BaF2 film is rather uniform, with the BaF2/YBCO interface being quite flat. Relatively few intrinsic defects, such as hillocks and depressions, were evident in the BaF2 film. Moreover, the hillocks and depressions appear to be faceted along {111} planes, suggesting that the surface is smooth and well-ordered on an atomic scale and that an island growth mechanism is involved in the evolution of the BaF2 film.

Radiation Induced Formation of Acrylated Palm Oil (APO) Nanoparticles Using Cetyltrimethylammonium Bromide Microemulsion System

2011 ◽  
Vol 364 ◽  
pp. 278-282
Author(s):  
Rida Tajau ◽  
Dahlan Khairul Mohd. Zaman ◽  
Mohd Hilmi Mahmood ◽  
Wan Md Zin Wan Yunus ◽  
Hashim Kamaruddin
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Palm Oil ◽  
Chemical Structure ◽  
Cetyltrimethylammonium Bromide ◽  
Control Process ◽  
Microemulsion System ◽  
Transmission Electron ◽  
Radiation Induced ◽  
The Fourier Transform

In this study, we report the preparation of Acrylated Palm Oil (APO) nanoparticles using aqueous Cetyltrimethylammonium bromide (CTAB) microemulsion system. This microemulsion system which contains the dispersed APO nanodroplets was subjected to the gamma irradiation to induce the formation of the crosslinked APO nanoparticles. The dynamic light scattering (DLS), the Fourier Transform Infrared (FTIR) spectrocospy and the Transmission Electron Microscopy (TEM) were used to characterize the size and the chemical structure of the nanoparticle. Sized of the APO nanoor microparticle can be varied depended on the volumes of the modified palm oil and the irradiation doses. Their size is in the range of 73 to 100 nanometer (nm) after irradiation using gamma irradiator. This radiation-induced method provides a free initiator induced and easy to control process as compared to the classical or chemical initiator process.

Atomic-scale structural and compositional analyses of Ruddlesden-Popper planar faults in AO-excess SrTiO3 (A = Sr2+, Ca2+, Ba2+) ceramics

2009 ◽  
Vol 24 (8) ◽  
pp. 2596-2604 ◽  
Author(s):  
Sašo Šturm ◽  
Makoto Shiojiri ◽  
Miran Čeh
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Dark Field ◽  
Atomic Scale ◽  
Transmission Electron ◽  
Initial Stage ◽  
Final Microstructure ◽  
Scanning Transmission ◽  
The Matrix ◽  
Annular Dark Field

The microstructure in AO-excess SrTiO3 (A = Sr2+, Ca2+, Ba2+) ceramics is strongly affected by the formation of Ruddlesden-Popper fault–rich (RP fault) lamellae, which are coherently intergrown with the matrix of the perovskite grains. We studied the structure and chemistry of RP faults by applying quantitative high-resolution transmission electron microscopy and high-angle annular dark-field scanning transmission electron microscopy analyses. We showed that the Sr2+ and Ca2+ dopant ions form RP faults during the initial stage of sintering. The final microstructure showed preferentially grown RP fault lamellae embedded in the central part of the anisotropic perovskite grains. In contrast, the dopant Ba2+ ions preferably substituted for Sr2+ in the SrTiO3 matrix by forming a BaxSr1−xTiO3 solid solution. The surplus of Sr2+ ions was compensated structurally in the later stages of sintering by the formation of SrO-rich RP faults. The resulting microstructure showed RP fault lamellae located at the surface of equiaxed BaxSr1-xTiO3 perovskite grains.

Structural Properties of Amorphous Silicon Produced by Electron Irradiation

1999 ◽  
Vol 557 ◽  
Author(s):  
J. Yamasaki ◽  
S. Takeda
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Distribution Function ◽  
Structural Properties ◽  
Electron Irradiation ◽  
Low Temperatures ◽  
Crystalline Silicon ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Means Of Transmission

AbstractThe structural properties of the amorphous Si (a-Si), which was created from crystalline silicon by 2 MeV electron irradiation at low temperatures about 25 K, are examined in detail by means of transmission electron microscopy and transmission electron diffraction. The peak positions in the radial distribution function (RDF) of the a-Si correspond well to those of a-Si fabricated by other techniques. The electron-irradiation-induced a-Si returns to crystalline Si after annealing at 550°C.

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