Effects of argon to oxygen ratio and post annealing on R.F. sputtered SnO2 thin film for ethylene gas detection

2011 ◽  
Vol 1292 ◽  
Author(s):  
Hosang Ahn ◽  
Seon-Bae Kim ◽  
Dong-Joo Kim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Gas Sensing ◽  
Gas Detection ◽  
Sno2 Thin Film ◽  
Processing Conditions ◽  
Film Property ◽  
Sensor Applications ◽  
Post Annealing ◽  
Oxygen Ratio

ABSTRACTOptimum processing conditions for fabricating SnO2 thin films were investigated to detect low ppm levels of ethylene gas for future on-field gas sensor applications. Different argon-to-oxygen ratios during R.F. sputtering were attempted to find the optimum gas ratio in depositing SnO2 thin film. Post-annealing was performed at 650°C to investigate the influence of film property change on ethylene sensing property of sensor. As-deposited and post-annealed films prepared under four different argon-to-oxygen ratios were studied by SEM, XRD, and sensitivity measurement. It was found that the stoichiometry and crystallinity of SnO2 films determined by post annealing was more influential than those by the argon to oxygen ratio during R.F sputtering on ethylene gas detection. An ethylene gas-sensing mechanism on R.F. sputtered SnO2 thin films for the design of processing conditions is proposed.

Preparation and Characterization of SnO2 Thin Film Gas Sensor for NOx Gas for Environmental Monitoring

2007 ◽  
Vol 124-126 ◽  
pp. 223-226 ◽  
Author(s):  
Md. Mosharaf Hossain Bhuiyan ◽  
Tsuyoshi Ueda ◽  
Tomoaki Ikegami
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Gas Sensing ◽  
Sno2 Thin Film ◽  
Interdigitated Electrodes ◽  
Undoped Sno2 ◽  
Gas Sensing Properties ◽  
Sno2 Thin Films ◽  
Oxygen Gas

SnO2 thin films have been grown on Si3N4 substrates and also on Al2O3 sensor substrates with Pt interdigitated electrodes by the pulsed excimer laser deposition (PLD). Palladium doped SnO2 thin film was also prepared by the PLD method combined with the DC sputtering process. The substrate temperature and the oxygen gas pressure were changed from 300 to 500°C and from 100 to 300 mTorr, respectively during deposition. The morphology and structural properties of the prepared thin films have been studied by AFM and XRD. The gas sensing properties of the SnO2 sensor to NO gas was evaluated by measuring electrical resistance between interdigitated electrodes. The highest sensitivity of the undoped SnO2 and Pd doped sensor was found to be around 9.5 and 42, respectively.

Effect of annealing and argon-to-oxygen ratio on sputtered SnO2 thin film sensor for ethylene gas detection

2010 ◽  
Vol 124 (1) ◽  
pp. 563-568 ◽  
Author(s):  
Hosang Ahn ◽  
Joo Hyon Noh ◽  
Seon-Bae Kim ◽  
Ruel A. Overfelt ◽  
Young Soo Yoon ◽  
...  
Keyword(s):  
Thin Film ◽  
Gas Detection ◽  
Sno2 Thin Film ◽  
Film Sensor ◽  
Thin Film Sensor ◽  
Oxygen Ratio

scholarly journals Optimizing the Properties of La0.8Sr0.2CrO3 Thin Films through Post-Annealing for High-Temperature Sensing

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1802
Author(s):  
Dan Liu ◽  
Peng Shi ◽  
Yantao Liu ◽  
Yijun Zhang ◽  
Bian Tian ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Maximum Size ◽  
Cross Sectional ◽  
Post Annealing ◽  
Maximum Conductivity ◽  
Different Temperatures ◽  
Post Annealing Temperature

La0.8Sr0.2CrO3 (0.2LSCO) thin films were prepared via the RF sputtering method to fabricate thin-film thermocouples (TFTCs), and post-annealing processes were employed to optimize their properties to sense high temperatures. The XRD patterns of the 0.2LSCO thin films showed a pure phase, and their crystallinities increased with the post-annealing temperature from 800 °C to 1000 °C, while some impurity phases of Cr2O3 and SrCr2O7 were observed above 1000 °C. The surface images indicated that the grain size increased first and then decreased, and the maximum size was 0.71 μm at 1100 °C. The cross-sectional images showed that the thickness of the 0.2LSCO thin films decreased significantly above 1000 °C, which was mainly due to the evaporation of Sr2+ and Cr3+. At the same time, the maximum conductivity was achieved for the film annealed at 1000 °C, which was 6.25 × 10−2 S/cm. When the thin films post-annealed at different temperatures were coupled with Pt reference electrodes to form TFTCs, the trend of output voltage to first increase and then decrease was observed, and the maximum average Seebeck coefficient of 167.8 µV/°C was obtained for the 0.2LSCO thin film post-annealed at 1100 °C. Through post-annealing optimization, the best post-annealing temperature was 1000 °C, which made the 0.2LSCO thin film more stable to monitor the temperatures of turbine engines for a long period of time.

Effect of Temperature on the Electrical and Gas Sensing Properties of Polyaniline and Multiwall Carbon Nanotube Doped Polyaniline Composite Thin Films

2011 ◽  
Vol 254 ◽  
pp. 167-170 ◽  
Author(s):  
Subodh Srivastava ◽  
Sumit Kumar ◽  
Vipin Kumar Jain ◽  
Y.K. Vijay
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Gas Sensing ◽  
Hydrogen Gas ◽  
Composite Thin Film ◽  
Effect Of Temperature ◽  
Multiwall Carbon Nanotube ◽  
Film Sensor ◽  
Composite Thin Films ◽  
Pani Composite

In the present work we have reported the effect of temperature on the gas sensing properties of pure Polyaniline (PANI) and Multiwall carbon nanotube (MWNT) doped PANI composite thin film based chemiresistor type gas sensors for hydrogen gas sensing application. PANI and MWNT doped PANI composite were synthesized by in situ chemical oxidative polymerization of aniline using ammonium persulfate in an acidic medium. The thin sensing film of chemically synthesized PANI and MWNT doped PANI composite were deposited onto finger type Cu-interdigited electrodes using spin cast technique to prepared chemiresistor type gas sensor. The electrical properties of these composite thin films were characterized by I-V measurements as function of temperature. The I-V measurement revealed that conductivity of composite thin films increased as the temperature increased. The changes in resistance of the composite thin film sensor were utilized for detection of hydrogen gas. It was observed that at room temperature, MWNT doped PANI composite sensor shows higher response value and sensitivity with good repeatability in comparison to pure PANI thin film sensor. It was also observed that both PANI and MWNT doped PANI composite thin film based sensors showed unstable behavior as the temperature increased. The surface morphology of these composite thin films has also been characterized by scanning electron microscopy (SEM) measurement.

scholarly journals Dielectric Properties of SnO2 Thin Film Using SPR Technique for Gas Sensing Applications

2014 ◽  
Vol 2014 ◽  
pp. 1-4 ◽  
Author(s):  
Ayushi Paliwal ◽  
Anjali Sharma ◽  
Monika Tomar ◽  
Vinay Gupta
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Gas Sensing ◽  
Rf Sputtering ◽  
Fast Response ◽  
Attenuated Total Reflection ◽  
Sno2 Thin Film ◽  
Bilayer Film ◽  
Significant Shift ◽  
Sensing Applications

Focus has been made on the determination of dielectric constant of thin dielectric layer (SnO2 thin film) using surface plasmon resonance (SPR) technique and exploiting it for the detection of NH3 gas. SnO2 thin film has been deposited by rf-sputtering technique on gold coated glass prism (BK-7) and its SPR response was measured in the Kretschmann configuration of attenuated total reflection using a p-polarised light beam at 633 nm wavelength. The SPR response of bilayer film was fitted with Fresnel’s equations in order to calculate the dielectric constant of SnO2 thin film. The air/SnO2/Au/prim system has been utilized for detecting varying concentration (500 ppm to 2000 ppm) of NH3 gas at room temperature using SPR technique. SPR curve shows significant shift in resonance angle from 44.8° to 56.7° on exposure of fixed concentration of NH3 gas (500 ppm to 2000 ppm) with very fast response and recovery speeds.

Gas‐Sensing Properties of Th / SnO2 Thin‐Film Gas Sensor to Trimethylamine

1999 ◽  
Vol 146 (9) ◽  
pp. 3536-3537 ◽  
Author(s):  
P. H. Wei ◽  
G. B. Li ◽  
S. Y. Zhao ◽  
L. R. Chen
Keyword(s):  
Thin Film ◽  
Gas Sensor ◽  
Gas Sensing ◽  
Sno2 Thin Film ◽  
Sensing Properties ◽  
Gas Sensing Properties

Thermochromic VO2 Thin Film Prepared by Post Annealing Treatment of V2O5 Thin Film

2009 ◽  
Vol 79-82 ◽  
pp. 747-750 ◽  
Author(s):  
Dong Qing Liu ◽  
Wen Wei Zheng ◽  
Hai Feng Cheng ◽  
Hai Tao Liu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transition ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Annealing Treatment ◽  
Simple Method ◽  
X Ray ◽  
Post Annealing ◽  
Vo2 Thin Films

Thermochromic vanadium dioxide (VO2) exhibits a semi-conducting to metallic phase transition at about 68°C, involving strong variations in electrical and optical properties. A simple method was proposed to prepare VO2 thin films from easily gained V2O5 thin films. The detailed thermodynamic calculation was done and the results show that V2O5 will decompose to VO2 when the post annealing temperature reaches 550°C at the atmospheric pressure of less than 0.06Pa. The initial V2O5 films were prepared by sol-gel method on fused-quartz substrates. Different post annealing conditions were studied. The derived VO2 thin film samples were characterized using X-ray diffraction and X-ray photoelectron spectroscopy. The electrical resistance and infrared emissivity of VO2 thin films under different temperatures were measured. The results show that the VO2 thin film derived from the V2O5 thin film annealed at 550°C for 10 hours is pure dioxide of vanadium without other valences. It was observed that the resistance of VO2 thin film with thickness about 600nm can change by 4 orders of magnitude and the 7.5-14μm emissivity can change by 0.6 during the phase transition.

scholarly journals Rapid and Scalable Wire-bar Strategy for Coating of TiO2 Thin-films: Effect of Post-Annealing Temperatures on Structures and Catalytic Dye-Degradation

Molecules ◽  
2020 ◽  
Vol 25 (7) ◽  
pp. 1683 ◽  
Author(s):  
P. Divya ◽  
S. Arulkumar ◽  
S. Parthiban ◽  
Anandarup Goswami ◽  
Tansir Ahamad ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dye Degradation ◽  
Window Glass ◽  
Visible Range ◽  
Large Area ◽  
Tio2 Thin Films ◽  
Water Contact ◽  
Annealing Temperatures ◽  
Post Annealing

Titanium dioxide (TiO2) thin films were rapidly coated on Corning glass substrates from the precursor solution using the wire-bar technique at the room temperature and then post-annealed at 400, 500 and 600 °C for 1 h under atmospheric conditions. The structural, morphological, optical, wettability and photocatalytic properties of the films were studied. X-ray diffraction analysis confirmed the formation of an anatase TiO2 structure irrespective of the post-annealing temperatures. The optical transparency of the films in the visible range was measured to be > 70%. A water contact angle (WCA) of ~0° was observed for TiO2 thin-film, post-annealed at 400 °C and 500 °C. However, WCA of 40.3° was observed for post-annealed at 600 °C. The photocatalytic dye-degradation using post-annealed thin-film was investigated indicating a steady improvement in the dye-degradation percentage (from 24.3 to 29.4%) with the increase of post-annealing temperature. The demonstrated TiO2 thin-films deposited by wire-bar coating technique showed promises for the manufacturing of large-area cost-effective self-cleaning window glass.

Optimizing the gas sensing characteristics of Co-doped SnO2 thin film based hydrogen sensor

2019 ◽  
Vol 785 ◽  
pp. 819-825 ◽  
Author(s):  
Zili Zhang ◽  
Chenbo Yin ◽  
Liu Yang ◽  
Jin Jiang ◽  
Yu Guo
Keyword(s):  
Thin Film ◽  
Gas Sensing ◽  
Hydrogen Sensor ◽  
Sno2 Thin Film ◽  
Sensing Characteristics ◽  
Co Doped

Optical Analysis of Iron-Doped Lead Sulfide Thin Films for Opto-Electronic Applications

2017 ◽  
Vol 17 (01n02) ◽  
pp. 1760004 ◽  
Author(s):  
K. N. Chidambara Kumar ◽  
S. K. Khadeer Pasha ◽  
Kalim Deshmukh ◽  
K. Chidambaram ◽  
G. Shakil Muhammad
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Lead Sulfide ◽  
Visible Region ◽  
Ferromagnetic Material ◽  
Cutoff Wavelength ◽  
Face Centered Cubic ◽  
X Ray ◽  
Sensor Applications ◽  
Iron Doped

Iron-doped lead sulfide thin films were deposited on glass substrates using successive ionic layer adsorption and reaction method (SILAR) at room temperature. The X-ray diffraction pattern of the film shows a well formed crystalline thin film with face-centered cubic structure along the preferential orientation (1 1 1). The lattice constant is determined using Nelson Riley plots. Using X-ray broadening, the crystallite size is determined by Scherrer formula. Morphology of the thin film was studied using a scanning electron microscope. The optical properties of the film were investigated using a UV–vis spectrophotometer. We observed an increase in the optical band gap from 2.45 to 3.03[Formula: see text]eV after doping iron in the lead sulfide thin film. The cutoff wavelength lies in the visible region, and hence the grown thin films can be used for optoelectronic and sensor applications. The results from the photoluminescence study show the emission at 500–720[Formula: see text]nm. The vibrating sample magnetometer measurements confirmed that the lead sulfide thin film becomes weakly ferromagnetic material after doping with iron.

Sign in / Sign up

Export Citation Format

Share Document