Nonlinear quenching rates in SrI2 and CsI scintillator hosts

2011 ◽  
Vol 1341 ◽  
Author(s):  
Joel Q. Grim ◽  
Qi Li ◽  
K.B. Ucer ◽  
R.T. Williams ◽  
A. Burger ◽  
...  

ABSTRACTUsing 0.5 ps pulses of 5.9 eV light to excite electron-hole concentrations varied up to 2x1020 e-h/cm3 corresponding to energy deposition within electron tracks, we measure dipole-dipole quenching rate constants K2 in SrI2 and CsI. We previously reported determination of K2 directly from the time dependence of quenched STE luminescence in CsI. The nonlinear quenching rate decreases rapidly within a few tens of picoseconds as the host excitation density drops below the Förster threshold. In the present work, we measure the dependence of integrated light yield on excitation density in the activated scintillators SrI2:Eu2+ and CsI:Tl+. The “z-scan” method of yield vs. irradiance is applicable to a wider range of materials, e.g. when the quenching population is not the main light-emitting population. Furthermore, because of using an integrating sphere and photomultiplier for light detection, the signal-to-noise is substantially better than the time-resolved method using a streak camera. As a result, both 2nd and 3rd orders of quenching (dipole-dipole and Auger) can be distinguished. Detailed comparison of SrI2 and CsI is of fundamental importance to help understand why SrI2 achieves substantially better proportionality than CsI in scintillator applications. The laser measurements, in contrast to scintillation, allow evaluating the rate constants of nonlinear quenching in a population which has small enough spatial gradient to suppress the effect of carrier diffusion.

2011 ◽  
Vol 20 (01) ◽  
pp. 13-25 ◽  
Author(s):  
CHRISTIAN WETZEL ◽  
YONG XIA ◽  
WEI ZHAO ◽  
YUFENG LI ◽  
MINGWEI ZHU ◽  
...  

Efficiency droop and green gap are terms that summarize performance limitations in GaInN / GaN high brightness light emitting diodes (LEDs). Here we summarize progress in the development of green LEDs and report on time resolved luminescence data of polar c -plane and non-polar m -plane material. We find that by rigorous reduction of structural defects in homoepitaxy on bulk GaN and V -defect suppression, higher efficiency at longer wavelengths becomes possible. We observe that the presence of donor acceptor pair recombination within the active region correlates with lower device performance. To evaluate the aspects of piezoelectric polarization we compare LED structures grown along polar and non-polar crystallographic axes. In contrast to the polar material we find single exponential luminescence decay and emission wavelengths that remain stable irrespective of the excitation density. Those findings render high prospects for overcoming green gap and droop in non-polar homoepitaxial growth.


2021 ◽  
Vol 22 (2) ◽  
pp. 885
Author(s):  
Krzysztof Żamojć ◽  
Irena Bylińska ◽  
Wiesław Wiczk ◽  
Lech Chmurzyński

The influence of the stable 2,2,6,6-tetramethylpiperidinyl-N-oxyl (TEMPO) nitroxide and its six C4-substituted derivatives, as well as two C3-substituted analogues of 2,2,5,5-tetramethylpyrrolidynyl-N-oxyl (PROXYL) nitroxide on the chosen fluoroquinolone antibiotics (marbofloxacin, ciprofloxacin, danofloxacin, norfloxacin, enrofloxacin, levofloxacin and ofloxacin), has been examined in aqueous solutions by UV absorption as well as steady-state and time-resolved fluorescence spectroscopies. The mechanism of fluorescence quenching has been specified and proved to be purely dynamic (collisional) for all the studied systems, which was additionally confirmed by temperature dependence experiments. Moreover, the selected quenching parameters—that is, Stern–Volmer quenching constants and bimolecular quenching rate constants—have been determined and explained. The possibility of electron transfer was ruled out, and the quenching was found to be diffusion-limited, being a result of the increase in non-radiative processes. Furthermore, as the chosen nitroxides affected the fluorescence of fluoroquinolone antibiotics in different ways, an influence of the structure and the type of substituents in the molecules of both fluoroquinolones and stable radicals on the quenching efficiency has been determined and discussed. Finally, the impact of the solvent’s polarity on the values of bimolecular quenching rate constants has been explained. The significance of the project comes from many applications of nitroxides in chemistry, biology and industry.


2020 ◽  
Author(s):  
Polla Rouf ◽  
Pitsiri Sukkaew ◽  
Lars Ojamäe ◽  
Henrik Pedersen

<p>Aluminium nitride (AlN) is a semiconductor with a wide range of applications from light emitting diodes to high frequency transistors. Electronic grade AlN is routinely deposited at 1000 °C by chemical vapour deposition (CVD) using trimethylaluminium (TMA) and NH<sub>3</sub> while low temperature CVD routes to high quality AlN are scarce and suffer from high levels of carbon impurities in the film. We report on an ALD-like CVD approach with time-resolved precursor supply where thermally induced desorption of methyl groups from the AlN surface is enhanced by the addition of an extra pulse, H<sub>2</sub>, N<sub>2</sub> or Ar between the TMA and NH<sub>3</sub> pulses. The enhanced desorption allowed deposition of AlN films with carbon content of 1 at. % at 480 °C. Kinetic- and quantum chemical modelling suggest that the extra pulse between TMA and NH<sub>3</sub> prevents re-adsorption of desorbing methyl groups terminating the AlN surface after the TMA pulse. </p>


2002 ◽  
Vol 67 (8) ◽  
pp. 1154-1164 ◽  
Author(s):  
Nachiappan Radha ◽  
Meenakshisundaram Swaminathan

The fluorescence quenching of 2-aminodiphenylamine (2ADPA), 4-aminodiphenylamine (4ADPA) and 4,4'-diaminodiphenylamine (DADPA) with tetrachloromethane, chloroform and dichloromethane have been studied in hexane, dioxane, acetonitrile and methanol as solvents. The quenching rate constants for the process have also been obtained by measuring the lifetimes of the fluorophores. The quenching was found to be dynamic in all cases. For 2ADPA and 4ADPA, the quenching rate constants of CCl4 and CHCl3 depend on the viscosity, whereas in the case of CH2Cl2, kq depends on polarity. The quenching rate constants for DADPA with CCl4 are viscosity-dependent but the quenching with CHCl3 and CH2Cl2 depends on the polarity of the solvents. From the results, the quenching mechanism is explained by the formation of a non-emissive complex involving a charge-transfer interaction between the electronically excited fluorophores and ground-state chloromethanes.


2005 ◽  
Vol 892 ◽  
Author(s):  
Andrei Osinsky ◽  
Jianwei Dong ◽  
J. Q. Xie ◽  
B. Hertog ◽  
A. M. Dabiran ◽  
...  

AbstractThis paper reviews of some of the progress made in the development of ZnO-based light emitting diodes (LEDs). n-ZnO/p-AlGaN-based heterostructures have been successfully for the fabrication of UV emitting LEDs that have operated at temperatures up to 650K, suggesting an excitonic origin for the optical transitions. RF-plasma-assisted molecular beam epitaxy has been used to grow epitaxial CdxZn1-xO films on GaN/sapphire structure. These films have a single-crystal wurtzite structure as demonstrated by structural and compositional analysis. High quality CdxZn1-xO films were grown with up to x=0.78 mole fraction as determined by RBS and SIMS techniques. Optical emission ranging from purple (Cd0.05Zn0.95O) to yellow (Cd0.29Zn0.71O) was observed. Compositional fluctuations in a Cd0.16Zn0.84O films were not detected by spatially resolved CL measurements, although intensity fluctuation with features of ∼0.5 μm diameter were seen on the intensity maps. Time resolved photoluminescence shows multi-exponential decay with 21 psec. and 49±3 psec. lifetimes, suggesting that composition micro-fluctuations may be present in Cd0.16Zn0.84O film.


2001 ◽  
Vol 115 (7) ◽  
pp. 3144-3154 ◽  
Author(s):  
N. Sadeghi ◽  
D. W. Setser ◽  
A. Francis ◽  
U. Czarnetzki ◽  
H. F. Döbele

1983 ◽  
Vol 61 (5) ◽  
pp. 801-808 ◽  
Author(s):  
Yuan L. Chow ◽  
Gonzalo E. Buono-Core ◽  
Bronislaw Marciniak ◽  
Carol Beddard

Bis(acetylacetonato)copper(II), Cu(acac)2, quenches triplet excited states of ketones and polynuclear aromatic hydrocarbons efficiently, but only aromatic ketones with high triplet energy successfully sensitize photoreduction of Cu(acac)2 in alcohols under nitrogen to give derivatives of aeetylacetonatocopper(I), Cu(acac). For the triplet state benzophenone-sensitized photoreduction of Cu(acac)2, the quantum yields of photoreduction (ΦC) and those of benzophenone disappearance (ΦB) were determined in methanol with various concentrations of Cu(acac)2. The values of the quenching rate constant, kq, determined from these two types of monitors on the basis of the proposed mechanism were in good agreement (6.89 ~ 7.35 × 109 M−1 s−1). This value was higher, by a factor of about two, than that obtained from the monitor of the benzophenone triplet decay rates generated by flash photolysis in the presence of Cu(acac)2. The quenching rate constants of various aromatic ketone and hydrocarbon triplet states by Cu(acac)2 were determined by flash photolysis to be in the order of the diffusion rate constant and the quantum yields of these photoreductions were found to be far from unity. Paramagnetic quenching, with contributions of electron exchange and charge transfer, was proposed as a possible quenching mechanism. For a series of aromatic ketone sensitizers with higher triplet energy, this mechanism was used to rationalize the observed high quenching rate constants in contrast to the low quantum yields of photoreduction.


2021 ◽  
Vol 21 (11) ◽  
pp. 5648-5652
Author(s):  
ll-Wook Cho ◽  
Bom Lee ◽  
Kwanjae Lee ◽  
Jin Soo Kim ◽  
Mee-Yi Ryu

The optical properties of InGaN/GaN green light-emitting diodes (LEDs) with an undoped graded short-period superlattice (GSL) and a Si-doped GSL (SiGSL) were investigated using photoluminescence (PL) and time-resolved PL spectroscopies. For comparison, an InGaN/GaN conventional LED (CLED) without the GSL structure was also grown. The SiGSL sample showed the strongest PL intensity and the largest PL peak energy because of band-filling effect and weakened quantum- confined stark effect (QCSE). PL decay time of SiGSL sample at 10 K was shorter than those of the CLED and GSL samples. This finding was attributed to the oscillator strength enhancement by the reduced QCSE due to the Coulomb screening by Si donors. In addition, the SiGSL sample exhibited the longest decay time at 300 K, which was ascribed to the reduced defect and dislocation density. These results indicate that insertion of the Si-doped GSL structure is an effective strategy for improving the optical properties in InGaN/GaN green LEDs.


2017 ◽  
Author(s):  
Colin D. Kinz-Thompson ◽  
Ruben L. Gonzalez

AbstractMany time-resolved, single-molecule biophysics experiments seek to characterize the kinetics of biomolecular systems exhibiting dynamics that challenge the time resolution of the given technique. Here we present a general, computational approach to this problem that employs Bayesian inference to learn the underlying dynamics of such systems, even when they are much faster than the time resolution of the experimental technique being used. By accurately and precisely inferring rate constants, our Bayesian Inference for the Analysis of Sub-temporal-resolution Data (BIASD) approach effectively enables the experimenter to super-resolve the poorly resolved dynamics that are present in their data.


Sign in / Sign up

Export Citation Format

Share Document