Data Transmission Performance of Few-Layer Graphene Ribbons

2011 ◽  
Vol 1344 ◽  
Author(s):  
Ali Bilge Guvenc ◽  
Jian Lin ◽  
Miroslav Penchev ◽  
Cengiz Ozkan ◽  
Mihrimah Ozkan
Keyword(s):  
Transmission Lines ◽  
Data Transmission ◽  
Chemical Vapor ◽  
Digital Data ◽  
Transmission Performance ◽  
Graphene Layers ◽  
Layer Graphene ◽  
Data Rates ◽  
Chemical Vapor Deposition Graphene ◽  
Few Layer Graphene

ABSTRACTWe investigated the electrical characteristics and digital data transmission performance few-layer graphene ribbons grown by chemical vapor deposition. Graphene ribbons having a mobility of 2,180 cm2V-1s-1 can sustain data rates up to 50 megabits per second at 1.5 μm length, thus the bandwidth is inversely proportional to resistance caused by defects in the graphene layers. Improving the graphene mobility to highest measured values (∼200,000 cm2V-1s-1) and using structures with multiple coplanar transmission lines in parallel could carry the bandwidth beyond the gigabits per second level.

scholarly journals Preparation of Copper Surface for the Synthesis of Single-Layer Graphene

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1071
Author(s):  
Ivan Kondrashov ◽  
Maxim Komlenok ◽  
Pavel Pivovarov ◽  
Sergey Savin ◽  
Elena Obraztsova ◽  
...  
Keyword(s):  
Copper Foil ◽  
Single Layer ◽  
Chemical Vapor ◽  
Copper Surface ◽  
Single Layer Graphene ◽  
Graphene Layers ◽  
Layer Graphene ◽  
Additional Layer ◽  
Graphene Synthesis ◽  
Few Layer Graphene

Chemical vapor deposition synthesis of graphene on copper foil from methane is the most promising technology for industrial production. However, an important problem of the formation of the additional graphene layers during synthesis arises due to the strong roughness of the initial copper foil. In this paper, various approaches are demonstrated to form a smooth copper surface before graphene synthesis to reduce the amount of few layer graphene islands. Six methods of surface processing of copper foils are studied and the decrease of the roughness from 250 to as low as 80 nm is achieved. The correlation between foil roughness and the formation of the additional layer is demonstrated. Under optimized conditions of surface treatment, the content of the additional graphene layer drops from 9 to 2.1%. The quality and the number of layers of synthesized graphene are analyzed by Raman spectroscopy, scanning electron microscopy and measurements of charge mobility.

Data Transmission Performance of Few Layer Graphene Ribbon Interconnects

2011 ◽  
Vol 11 (6) ◽  
pp. 4830-4837
Author(s):  
A. B. Guvenc ◽  
J. Lin ◽  
M. Penchev ◽  
M. Ozkan ◽  
C. Ozkan
Keyword(s):  
Data Transmission ◽  
Graphene Ribbon ◽  
Transmission Performance ◽  
Layer Graphene ◽  
Few Layer Graphene

Binary Data Transmission Performance of Sub-20 nm Indium Antimonide Nanowires

2011 ◽  
Vol 1350 ◽  
Author(s):  
Ali Bilge Guvenc ◽  
Miroslav Penchev ◽  
Jiebin Zhong ◽  
Cengiz Ozkan ◽  
Mihrimah Ozkan
Keyword(s):  
Indium Antimonide ◽  
Data Transmission ◽  
Binary Data ◽  
Impedance Matching ◽  
Chemical Vapor ◽  
Crystal Defects ◽  
Transmission Performance ◽  
Data Rates ◽  
Parasitic Parameters ◽  
20 Nm

ABSTRACTWe investigated the data transmission performance of indium antimonide (InSb) nanowires (NWs) synthesized on InSb (100) substrate using chemical vapor deposition (CVD) having diameters of 20 nm and below. The results indicate that the data transmission performance of NWs suffer from low mobility values on the order of 10-to-15 cm2V-1s-1 because of the scattering due to their small diameters, crystal defects and oxidation occurs during growth and cooling. The 20 nm NWs can sustain data rates up to 5 mega bits per second (Mbps) without any impedance matching and de-embedding of the parasitic parameters coming from the measurement system with a bit error rate (BER) level of 10-8. The data rate is directly proportional to the diameter of the NWs.

scholarly journals Growth of Ordered Graphene Ribbons by Sublimation Epitaxy

Crystals ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 449
Author(s):  
Shuxian Cai ◽  
Xingfang Liu ◽  
Xin Zheng ◽  
Zhonghua Liu
Keyword(s):  
Substrate Surface ◽  
Graphene Film ◽  
Graphene Ribbon ◽  
High Quality ◽  
Graphene Layers ◽  
Force Microscopy ◽  
Layer Graphene ◽  
Micro Raman Spectroscopy ◽  
Atomic Force ◽  
Few Layer Graphene

Ordered graphene ribbons were grown on the surface of 4° off-axis 4H-SiC wafers by sublimation epitaxy, and characterized by using scanning electron microscopy (SEM), atomic force microscopy (AFM) and micro-Raman spectroscopy (μ-Raman). SEM showed that there were gray and dark ribbons on the substrate surface, and AFM further revealed that these ordered graphene ribbons had clear stepped morphologies due to surface step-bunching. It was shown by μ-Raman that the numbers of graphene layers of these two types of regions were different. The gray region was composed of mono- or bilayer ordered graphene ribbon, while the dark region was of tri- or few-layer ribbon. Meanwhile, ribbons were all homogeneous and had a width up to 40 μm and a length up to 1000 μm, without micro defects such as grain boundaries, ridges, or mono- and few-layer graphene mixtures. The results of this study are useful for optimized growth of high-quality graphene film on silicon carbide crystal.

Chemical vapor deposition growth of few-layer graphene for transparent conductive films

RSC Advances ◽  
2015 ◽  
Vol 5 (55) ◽  
pp. 44142-44148 ◽  
Author(s):  
Jun Pu ◽  
Lei Tang ◽  
Chaowei Li ◽  
Taotao Li ◽  
Lin Ling ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Conductive Films ◽  
Layer Graphene ◽  
Pressure Chemical ◽  
Few Layer Graphene ◽  
Etching Effect

The facile and scalable technique is demonstrated, which grow graphene with controllable layers on copper foil substrates using the etching effect of H2 in atmospheric pressure chemical vapor deposition (APCVD).

scholarly journals Imaging of local structures affecting electrical transport properties of large graphene sheets by lock-in thermography

2019 ◽  
Vol 5 (2) ◽  
pp. eaau3407 ◽  
Author(s):  
H. Nakajima ◽  
T. Morimoto ◽  
Y. Okigawa ◽  
T. Yamada ◽  
Y. Ikuta ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Chemical Vapor ◽  
Atomic Scale ◽  
Electrical Transport Properties ◽  
Large Area ◽  
Graphene Layers ◽  
Device Applications ◽  
Chemical Vapor Deposition Graphene ◽  
Lock In

The distribution of defects and dislocations in graphene layers has become a very important concern with regard to the electrical and electronic transport properties of device applications. Although several experiments have shown the influence of defects on the electrical properties of graphene, these studies were limited to measuring microscopic areas because of their long measurement times. Here, we successfully imaged various local defects in a large area of chemical vapor deposition graphene within a reasonable amount of time by using lock-in thermography (LIT). The differences in electrical resistance caused by the micrometer-scale defects, such as cracks and wrinkles, and atomic-scale domain boundaries were apparent as nonuniform Joule heating on polycrystalline and epitaxially grown graphene. The present results indicate that LIT can serve as a fast and effective method of evaluating the quality and uniformity of large graphene films for device applications.

Metal-free synthesis of few-layer graphene films on insulating SiO2 and SiC substrates by chemical vapor deposition

2019 ◽  
Vol 6 (10) ◽  
pp. 105604
Author(s):  
Lirong Zhao ◽  
Yanyan Wang ◽  
Xiaodong Zhu ◽  
Peixuan Ji ◽  
Kaimin Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Metal Free ◽  
Layer Graphene ◽  
Graphene Films ◽  
Few Layer Graphene

Graphene Layers on Silicon Carbide Studied by Raman Spectroscopy

2008 ◽  
Vol 600-603 ◽  
pp. 567-570 ◽  
Author(s):  
Jonas Röhrl ◽  
Martin Hundhausen ◽  
Konstantin V. Emtsev ◽  
Thomas Seyller ◽  
Lothar Ley
Keyword(s):  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Light Scattering ◽  
Graphene Layer ◽  
Monolayer Graphene ◽  
Spectroscopy Study ◽  
Graphene Layers ◽  
Layer Graphene ◽  
Micro Raman Spectroscopy ◽  
Few Layer Graphene

We present a micro-Raman spectroscopy study on single- and few layer graphene (FLG) grown on the silicon terminated surface of 6H-silicon carbide (SiC). On the basis of the 2D-line (light scattering from two phonons close to the K-point in the Brillouin zone) we distinguish graphene mono- from bilayers or few layer graphene. Monolayers have a 2D-line consisting of only one component, whereas more than one component is observed for thicker graphene layers. Compared to the graphite the monolayer graphene lines are shifted to higher frequencies. We tentatively ascribe the corresponding phonon hardening to strain in the first graphene layer.

Raman Spectroscopy as a Tool to Address Individual Graphene Layers in Few-Layer Graphene

2012 ◽  
Vol 116 (35) ◽  
pp. 19046-19050 ◽  
Author(s):  
Martin Kalbac ◽  
Jing Kong ◽  
Mildred S. Dresselhaus
Keyword(s):  
Raman Spectroscopy ◽  
Graphene Layers ◽  
Layer Graphene ◽  
Few Layer Graphene

Synthesis of Carbon Nanowalls and Few-Layer Graphene Sheets on Transparent Conductive Substrates

2015 ◽  
Vol 229 (1-2) ◽  
Author(s):  
Michael Höltig ◽  
Charlotte Ruhmlieb ◽  
Christian Strelow ◽  
Tobias Kipp ◽  
Alf Mews
Keyword(s):  
Chemical Vapor ◽  
Graphene Sheets ◽  
Radio Frequency Plasma ◽  
Capacitively Coupled ◽  
Glass Substrates ◽  
Layer Graphene ◽  
Frequency Plasma ◽  
Conductive Substrates ◽  
Carbon Nanowalls ◽  
Few Layer Graphene

AbstractWe report on the growth of carbon nanowalls and few-layer graphene sheets on glass substrates coated with different transparent conductive oxides or gold. The growth is accomplished by a capacitively-coupled radio-frequency plasma-enhanced chemical vapor deposition setup with a gas mixture of C

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