Au-assisted Growth of Indium Antimonide Nanowires by Chemical Vapor Deposition: Temperature and Growth Duration Effects

2011 ◽  
Vol 1350 ◽  
Author(s):  
Jiebin Zhong ◽  
Jian Lin ◽  
Miroslav Penchev ◽  
Mihrimah Ozkan ◽  
Cengiz S. Ozkan
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Temperature ◽  
Indium Antimonide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Direction ◽  
Growth Duration ◽  
Transmission Electron ◽  
Temperature And Growth ◽  
Insb Nanowires

ABSTRACTIn this paper, we investigate the morphology variation of Au-assisted epitaxial InSb nanowires (NWs) dependence on growth temperature and growth duration by chemical vapor deposition (CVD). The NW length and tapering factor correlated to the NW morphology are determined as a function of growth temperature (300°C-480°C). Higher density and longer NWs were observed on the substrate as proportional to the growth duration. The growth direction of the NWs is <110> by Transmission Electron Microscopy (TEM) studies. The aim of this study is to gain better understanding of the III-V NWs growth mechanism and achieve control over the growth of InSb NWs.

scholarly journals Synthesis and Optical Properties of CdSxSe1-x Semiconductor Nanomaterials by Chemical Vapor Deposition Method

2019 ◽  
Vol 12 (3) ◽  
pp. 55-64
Author(s):  
Nadia M. Jassim
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Direction ◽  
Chemical Vapor Deposition Method ◽  
X Ray Diffraction ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Vls Growth

Highly pure and crystalline CdSxSe1 -x nanostructures have been successfully synthesized via Chemical Vapor Deposition (CVD) method, changing the components of x, in order to adjust the band gap of materials, and the relationship with the lattice constant. Using X-ray Diffraction (XRD) to characterize the phase structures and elemental compositions of the samples, and using Field Emission Scanning Electron Microscopy (FESEM) to observe the surface morphology of CdSxSe1 -x nanomaterials and confirm the VLS growth mechanism. Using the High Resolution Transmission Electron Microscopy (HRTEM) and Selected Area Electron Diffraction (SAED) to analyze the crystal structure and the growth direction of the materials

scholarly journals Nano/Micro-Structured ZnO Rods Synthesized by Thermal Chemical Vapor Deposition with Perpendicular Configuration

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2518
Author(s):  
Seok Cheol Choi ◽  
Do Kyung Lee ◽  
Sang Ho Sohn
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hexagonal Wurtzite Structure ◽  
Growth Time ◽  
Thermal Chemical Vapor Deposition ◽  
Diffraction Patterns ◽  
Temperature And Growth ◽  
Zno Rods

Under a one-step process, catalyst-free growth of one-dimensional (1D) ZnO hierarchical nanostructures was performed on ZnO-seeded Si substrate by thermal chemical vapor deposition with a perpendicular setup. The morphological and crystallographic properties of the nano/micro-structured ZnO rods were investigated with varying growth temperature and growth time. X-ray diffraction patterns of 1D ZnO double-structured rods showed the hexagonal wurtzite structure. The morphology and crystal structure of the ZnO double-structured rods were sensitive to the growth temperature and growth time. From Raman scattering and photoluminescence spectra, the orientation and size effects of the ZnO double-structured rods were discussed in relation to growth temperatures and growth times.

Transmission Electron Microscopy (TEM) Specimen Preparation Technique using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (WSix)

1997 ◽  
Author(s):  
K. Doong ◽  
J.-M. Fu ◽  
Y.-C. Huang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Transmission Electron

Abstract The specimen preparation technique using focused ion beam (FIB) to generate cross-sectional transmission electron microscopy (XTEM) samples of chemical vapor deposition (CVD) of Tungsten-plug (W-plug) and Tungsten Silicides (WSix) was studied. Using the combination method including two axes tilting[l], gas enhanced focused ion beam milling[2] and sacrificial metal coating on both sides of electron transmission membrane[3], it was possible to prepare a sample with minimal thickness (less than 1000 A) to get high spatial resolution in TEM observation. Based on this novel thinning technique, some applications such as XTEM observation of W-plug with different aspect ratio (I - 6), and the grain structure of CVD W-plug and CVD WSix were done. Also the problems and artifacts of XTEM sample preparation of high Z-factor material such as CVD W-plug and CVD WSix were given and the ways to avoid or minimize them were suggested.

Understanding the Growth Mechanisms of Tin Oxide Nanowires by Chemical Vapor Deposition

2021 ◽  
Vol 21 (4) ◽  
pp. 2538-2544
Author(s):  
Nguyen Minh Hieu ◽  
Nguyen Hoang Hai ◽  
Mai Anh Tuan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Mapping ◽  
X Ray Diffraction ◽  
Lattice Constants ◽  
Transmission Electron ◽  
Scanning Transmission

Tin oxides nanowires were prepared by chemical vapor deposition using shadow mask. X-ray diffraction indicated that the products were tetragonal having crystalline structure with lattice constants a = 0.474 nm and c = 0.318 nm. The high-resolution transmission electron microscopy revealed that inter planar spacing is 0.25 nm. The results chemical mapping in scanning transmission electron microscopy so that the two elements of Oxygen and Tin are distributed very homogeneously in nanowires and exhibit no apparent elements separation. A bottom-up mechanism for SnO2 growth process has been proposed to explain the morphology of SnO2 nanowires.

scholarly journals Growth Mechanism of SmB6 Nanowires Synthesized by Chemical Vapor Deposition: Catalyst-Assisted and Catalyst-Free

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1062
Author(s):  
Yi Chu ◽  
Yugui Cui ◽  
Shaoyun Huang ◽  
Yingjie Xing ◽  
Hongqi Xu
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Element Analysis ◽  
Kondo Insulator ◽  
Catalyst Free ◽  
Transmission Electron ◽  
The Difference ◽  
Physical Phenomena

SmB6 nanowires, as a prototype of nanostructured topological Kondo insulator, have shown rich novel physical phenomena relating to their surface. Catalyst-assisted chemical vapor deposition (CVD) is a common approach to prepare SmB6 nanowires and Ni is the most popular catalyst used to initiate the growth of SmB6 nanowires. Here, we study the effect of growth mechanism on the surface of SmB6 nanowires synthesized by CVD. Two types of SmB6 nanowires are obtained when using Ni as the catalyst. In addition to pure SmB6 nanowires without Ni impurity, a small amount of Ni is detected on the surface of some SmB6 nanowires by element analysis with transmission electron microscopy. In order to eliminate the possible distribution of Ni on nanowire surface, we synthesize single crystalline SmB6 nanowires by CVD without using catalyst. The difference between catalyst-assisted and catalyst-free growth mechanism is discussed.

Sign in / Sign up

Export Citation Format

Share Document