Theory of phonon conductivity of semiconductor superlattices

2011 ◽  
Vol 1347 ◽  
Author(s):  
Gyaneshwar P. Srivastava ◽  
Steven P. Hepplestone
Keyword(s):  
Relaxation Time ◽  
Brillouin Zone ◽  
Phonon Scattering ◽  
Single Mode ◽  
Numerical Calculations ◽  
Interface Scattering ◽  
Charge Model ◽  
Analytic Expressions ◽  
Bond Charge ◽  
Bond Charge Model

ABSTRACTWe present a single-mode relaxation-time theory of phonon conductivity of semisonductor superlattices with nanoscale periodicities. Analytic expressions have been obtained for phonon-interface scattering and phonon-phonon scattering taking into consideration the effects of interfaces and the presence of two materials in superlattices. Numerical calculations have been performed by using phonon eigensolutions obtained from an enhanced adiabatic bond charge model and by carrying out Brillouin zone integration using the special q-points scheme. The experimental measured conductivity results for Si(19)/Ge(5) and Si(72)/Ge(30) superlattices have been successfully explained.

scholarly journals Lattice dynamics of II-VI materials using the adiabatic bond-charge model

1996 ◽  
Vol 53 (14) ◽  
pp. 9052-9058 ◽  
Author(s):  
B. D. Rajput ◽  
D. A. Browne
Keyword(s):  
Lattice Dynamics ◽  
Charge Model ◽  
Bond Charge ◽  
Bond Charge Model

Determination of electric field gradient parameters in tellurium

1976 ◽  
Vol 54 (16) ◽  
pp. 1692-1698 ◽  
Author(s):  
K. Hamilton ◽  
B. M. Powell ◽  
P. Martel
Keyword(s):  
Electric Field ◽  
Electric Field Gradient ◽  
Field Gradient ◽  
Inelastic Neutron Scattering ◽  
Mean Square Displacement ◽  
Inelastic Neutron ◽  
Charge Model ◽  
Bond Charge ◽  
Bond Charge Model

The relative intensities of the Mössbauer doublet in Te have been analysed at 4 K and 80 K by utilizing values of the mean square displacement tensor derived from inelastic neutron scattering measurements. The orientation β of the electric field gradient ellipsoid and its asymmetry parameter η have been determined. At 4 K, β = 90°, η = −0.17 and at 80 K, β = 92°, η = −0.48. A simple 'bond charge' model is proposed in an attempt to understand the discrepancy between these values of the electric field gradient parameters and those obtained theoretically by other authors.

Lattice dynamics of SiC polytypes within the bond-charge model

1994 ◽  
Vol 50 (18) ◽  
pp. 13401-13411 ◽  
Author(s):  
M. Hofmann ◽  
A. Zywietz ◽  
K. Karch ◽  
F. Bechstedt
Keyword(s):  
Lattice Dynamics ◽  
Charge Model ◽  
Bond Charge ◽  
Bond Charge Model
Sign in / Sign up

Export Citation Format

Share Document