Enhanced adhesion of coating layers by Ion Beam Mixing: An application for nuclear hydrogen production

2011 ◽  
Vol 1354 ◽  
Author(s):  
Jae-Won Park ◽  
Hyung-Jin Kim ◽  
Sunmog Yeo ◽  
Seong-Duk Hong
Keyword(s):  
Ion Beam ◽  
Substrate Surface ◽  
Dissimilar Materials ◽  
Protective Layer ◽  
Thermal Spike ◽  
Considerable Part ◽  
Hastelloy X ◽  
State Diffusion ◽  
Excellent Adhesion ◽  
Sic Film

ABSTRACTThe bonding between two dissimilar materials has been a problem, partiularly in coating metals with non-metallic protective layer. In this work, it is demonstrated that a strong bonding between ceramics/metal can be achieved by mixing the atoms at the interface by ion-beam. Specifically, SiC coating on Hastelloy X was studied for a high temperature corrosion protection. Auger elemental mapping across the interface shows a far broader mixed region than the region expected by SRIM calculation, which is thought to be due to the thermal spike liquid state diffusion. The results showed that, although the thermal expansion coefficient of Hastelloy X is about three times higher than that of SiC, the film did not peel-off at above 900 oC confirming excellent adhesion. Instead, the SiC film was cracked along the grain boundary of the substrate above 700 oC. At above 900 oC, the film was crystallized forming islands on the substrate so that a considerable part of the substrate surface could be exposed to the corrosive environment. To cover the exposed area, it is suggested that the coating/IBM process should be repeated multiply.

A Surface Modification of Hastelloy X by a SiC Coating and an Ion Beam Irradiation for a Potential use for Iodine-Sulfur Cycle in Nuclear Hydrogen Production System

2008 ◽  
Vol 1125 ◽  
Author(s):  
Jae-Won Park ◽  
Zuhair S Khan ◽  
Hyung-Jin Kim ◽  
Yongwan Kim
Keyword(s):  
Corrosion Resistance ◽  
Surface Modification ◽  
Electron Beam ◽  
Hydrogen Production ◽  
Interfacial Reaction ◽  
Ion Beam ◽  
High Corrosion Resistance ◽  
Hastelloy X ◽  
Deposited Film ◽  
Sic Film

ABSTRACTThe materials used for the SO3 decomposer in Iodine-Sulfur (IS) cycle for Nuclear Hydrogen Production System require excellent mechanical properties as well as a high corrosion resistance in SO2/SO3 environment at an elevated temperature up to 950°C. So far, no metallic materials have been suggested to be useful in such an environment. A surface modification of Hastelloy X by a SiC coating processed by an electron beam evaporative deposition has been studied in combination with an ion beam mixing (IBM) and an ion beam hammering (IBH). The simply deposited SiC film on the Hastelloy X substrate is easily peeled-off during an annealing at a high temperature due to a huge difference in their coefficients of thermal expansion (CTE), however the SiC coating on Hastelloy X prepared with IBM is sustained above 900 °C when the heating rate is less than 10 °C/min. The process of coating and IBM consists of a thin SiC film deposition, a subsequent N ion beam bombardment, and then an additional deposition of the film to the designed thickness. IBM plays a role of fastening the SiC film on the Hastelloy X substrate until the interfacial reaction takes place. Once the reaction takes place, new phases are developed at the interface under the consumption of the film and the substrate materials, producing a buffer layer. Without IBM, the SiC film tends to be easily detached during an annealing before the interfacial reaction initiates. The SiC film prepared with IBM requires a post-deposition annealing in vacuum for the interfacial reaction. However, the sublimation of SiC film prepared by an electron beam evaporative deposition occurs at the temperature above 900 °Cdecreasing the thickness of the deposited film. The sublimation of the SiC film can be prevented by IBH in which ion beams are bombarded onto the deposited film. This may be attributed to an ion beam bombardment induced densification of the deposited film. The resultant SiC coated Hastelloy X prepared by IBM and IBH exhibits a high corrosion resistance in a sulfuric acid at 300 °C, suggesting a possible application for the IS cycle.

Optimisation of Nickel Aluminising by CVD

2012 ◽  
Vol 323-325 ◽  
pp. 367-372 ◽  
Author(s):  
Patrick J. Masset ◽  
Agnieszka Bogusz ◽  
Jan Sieniawski ◽  
Bartek Wierzba ◽  
Katarzyna Tkacz-Śmiech
Keyword(s):  
Substrate Surface ◽  
Chemical Vapour ◽  
Aluminium Chloride ◽  
Aluminium Content ◽  
Surface Boundary ◽  
Essential Information ◽  
Nial Phase ◽  
Partial Pressures ◽  
State Diffusion ◽  
Surface Boundary Condition

Results Concerning Nickel Aluminisation with Application of Chemical Vapour Deposition Method Are Presented. Two-Step Processing under Investigation Consists of Al Chloride Formation in the Primary Vessel and Al Deposition in the Secondary One. the Initial Gas Stream Is Composed of Hcl Dissolved in H2at Various Ratios. it Was Shown that the Choice of the [HCl]/[H2] Ratio and the Determination of the Optimum Temperature to Produce Most Preferential β-Nial Phase May Be Done with the Use of Thermodynamic Calculations. the Results Obtained with Application of Factsage Program Confirm Essential Influence of both Initial [HCl]/[H2] Ratio (in the Range between 0,05 and 100) and the Temperature in the Second Vessel (1123 K – 1323 K) on Aluminium Chloride Partial Pressures and Hence Aluminium Content in its Gaseous Donors and at the Substrate Surface (boundary Condition for Interdiffusion in Ni-Al System). it Was Confirmed that β-Nial Growth Is Favoured at Low [HCl]/[H2] Ratios and High Temperatures for which Alcl and AlCl2Partial Pressures Increase with Respect to that of AlCl3. the Thermodynamic Predictions Remain in Agreement with CVD Experiments. the Presented Thermodynamic Data May Be Used as a Source of Essential Information for Designing Further Experiments in this Field as Well as for Modelling of Solid-State Diffusion in Ni-Al System.

EVOLUTION OF INTERFACIAL MICROSTRUCTURE DURING RESISTANCE SPOT WELDING OF CU AND AL WITH AND NI-P COATING

2021 ◽  
pp. 1-12
Author(s):  
Nannan Chen ◽  
Hongliang Wang ◽  
Jingjing Li ◽  
Vic Liu ◽  
James Schroth
Keyword(s):  
Heat Input ◽  
Resistance Spot Welding ◽  
Spot Welding ◽  
Dissimilar Materials ◽  
Kirkendall Effect ◽  
Interfacial Microstructure ◽  
Formation Mechanisms ◽  
Elemental Distribution ◽  
Resistance Spot ◽  
State Diffusion

Abstract Dissimilar materials of copper (Cu) to aluminum (Al) with nickel-phosphorus (Ni-P) coatings were joined using resistance spot welding. The Ni-P coatings were electroless plated on the Al surfaces to eliminate the formation of brittle Cu-Al intermetallic compounds (IMCs) at the faying interface of Cu to Al. Three welding schedules with various heat input were employed to produce different interfacial microstructure. The evolution of interfaces in terms of phase constitution, elemental distribution and defects (gaps and voids) was characterized and the formation mechanisms were elucidated. During the welding, the bonding between Cu and Ni-P form through solid-state diffusion, while the faster diffusion rate of Cu relative to Ni and P atoms promotes the generation of sub-micro voids. As the heat input increases, gaps at the Cu/Ni-P interface diminishes accompanied by increase of sub-micro voids. A moderate schedule helps to remove the gaps and inhibit the voids formation. An Al3Ni layer and nanovoids were found around the interface of Ni-P/Al. The increased heat input decreases the grain size of Al3Ni at the interface by eutectic remelting and increases the nanovoids by enhanced nanoscale Kirkendall effect.

Ion beam joining of similar and dissimilar materials

2022 ◽  
pp. 79-123
Author(s):  
Shyamal Chatterjee ◽  
Souvick Chakraborty ◽  
Manoj K Rajbhar
Keyword(s):  
Ion Beam ◽  
Dissimilar Materials

Enhanced Interfacial Reaction of SiC Films Deposited onto Hastelloy X Substrates by Ion-Beam Mixing

2009 ◽  
Vol 54 (5(2)) ◽  
pp. 2124-2128 ◽  
Author(s):  
Jae-Won Park ◽  
ZuhairS. Khan ◽  
Hyung-Jin Kim ◽  
Yong-Wan Kim
Keyword(s):  
Interfacial Reaction ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Hastelloy X ◽  
Sic Films

scholarly journals Hybrid Approaches for Selective Laser Sintering by Building on Dissimilar Materials

Materials ◽  
2020 ◽  
Vol 13 (22) ◽  
pp. 5285
Author(s):  
Babette Goetzendorfer ◽  
Thomas Mohr ◽  
Ralf Hellmann
Keyword(s):  
Substrate Surface ◽  
Selective Laser Sintering ◽  
Dissimilar Materials ◽  
Polyamide 6 ◽  
Laser Sintering ◽  
New Approach ◽  
Metallic Substrates ◽  
Polyamide 12 ◽  
Melting Temperatures ◽  
Hybrid Approaches

We introduced a new approach in selective laser sintering for hybrid multicomponent systems by fabricating the sintered polyamide 12 (PA12) part directly onto a similar (PA12) or dissimilar (polyamide 6 (PA6) and tool steel 1.2709) joining partner. Thus, the need for adhesive substances or joining pressure was completely circumvented, leading to the possibility of pure hybrid lightweight bi-polymer or metal–polymer systems. By taking advantage of the heating capabilities of the sinter laser regarding the substrate surface, different exposure strategies circumvented the lack of overlapping melting temperatures of dissimilar polymers. Therefore, even sintering on non-PA12 polymers was made possible. Finally, the transfer on metallic substrates—made up by selective laser melting (SLM)—was successfully performed, closing the gap between two powder-based additive processes, selective laser sintering (SLS) and SLM.

scholarly journals Adhesion and Cohesion

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
J. Anthony von Fraunhofer
Keyword(s):  
Substrate Surface ◽  
Dissimilar Materials ◽  
Surface Wetting ◽  
Adhesive Dentistry ◽  
Adhesion Failure ◽  
Mechanical Adhesion ◽  
Adhesion Zone ◽  
Underlying Mechanisms ◽  
Adhesive Materials ◽  
Mechanisms Of Adhesion

The phenomena of adhesion and cohesion are reviewed and discussed with particular reference to dentistry. This review considers the forces involved in cohesion and adhesion together with the mechanisms of adhesion and the underlying molecular processes involved in bonding of dissimilar materials. The forces involved in surface tension, surface wetting, chemical adhesion, dispersive adhesion, diffusive adhesion, and mechanical adhesion are reviewed in detail and examples relevant to adhesive dentistry and bonding are given. Substrate surface chemistry and its influence on adhesion, together with the properties of adhesive materials, are evaluated. The underlying mechanisms involved in adhesion failure are covered. The relevance of the adhesion zone and its importance with regard to adhesive dentistry and bonding to enamel and dentin is discussed.

Formation of Fe-Co-Si Structure in Fe and Co Implanted Si Substrate

MRS Advances ◽  
2017 ◽  
Vol 2 (42) ◽  
pp. 2309-2314
Author(s):  
Wickramaarachchige J. Lakshantha ◽  
Satyabrata Singh ◽  
Floyd D. McDaniel ◽  
Bibhudutta Rout
Keyword(s):  
Magnetic Field ◽  
Phase Structure ◽  
Peak Concentration ◽  
Ternary Phase ◽  
Ion Beam ◽  
Substrate Surface ◽  
Beam Direction ◽  
Si Substrate ◽  
The Magnetic Field

ABSTRACTTernary Fe-Co-Si B20 phase structure was formed by implanting Fe and Co ions consecutively into Si(100) substrate at 50 keV energy, each with a fluence of 1.0 × 1017 atoms/cm2 and post-thermal vacuum annealing at 500 oC for 60 minutes. An in-situ magnetic field was used to enhance the formation of the ternary phase in the Si substrate during the implantation process. The magnetic field of 0.05 T was applied perpendicular to the incoming ion beam direction and parallel to the substrate surface to form elongated clusters in the transverse direction of the sample. Prior to the implantation of ions, the implant ions depth profiles were simulated using a dynamic ion-solid interaction code (TRIDYN). The TRIDYN simulation predicted a saturation in the peak concentration of the Fe and Co ions at a fluence of 1.0 × 1017 atoms/cm2. XPS measurement at the peak concentration depth (40 nm) showed the presence of Fe (23 %) and Co (32 %) in the Si matrix. XRD characterization confirmed the presence of stable Fe-Co-Si B20 phase structure in the annealed samples implanted with the in-situ magnetic field.

Chemically-Enhanced GaAs Maskless Etching Using a Novel Focused Ion Beam Etching System with a Chlorine Molecular and Radical Beam

1986 ◽  
Vol 75 ◽  
Author(s):  
N. Takado ◽  
K. Asakawa ◽  
H. Arimoto ◽  
T. Morita ◽  
S. Sugata ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Substrate Surface ◽  
Maximum Yield ◽  
Laser Cavity ◽  
High Rate ◽  
Enhancement Effect ◽  
Scanning Time ◽  
Chemical Enhancement ◽  
Deep Groove

AbstractChlorine-enhanced GaAs maskless etching using a novel focused-ion-beametching (FIBE) system has been examined for establishing high-rate and smooth FIBE. The system is composed of an air-locked ultrahigh-vacuum chamber, a 30 KeV Ga+ FIB column and two kinds of chlorine-irradiation nozzles. A fine nozzle enabled us to irradiate a high-density Cl2 flux on a desired, small area of the sample while retaining a sufficiently low surrounding-gas pressure for stable Ga+ FIB emission. Highly chemically-enhanced sputtering yields (up to 50 GaAs molecules per incident ion) were obtained. At the maximum yield, line-scanned deep-groove (6.5 um) etching with a smooth surface, capable of fabricating a laser-cavity optical mirror, was demonstrated. The chemical-enhancement effect showed high FIB-scanning-time dependence. This effect was also observed by irradiating with a plasma-dissociated Cl radicals using a novel radical beam gun. An analytical model, based on the Ga+-ion bombardment on the chlorine-adsorbed substrate surface, suggested that the maximum chemical enhancement is obtained when the Ga+-FIB scanning time is adjusted to the chlorine-coverage time, given by the Cl2-molecule or Cl-radical flux density.

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