Proton formation and diffusion in amorphous SiNx:H

2011 ◽  
Vol 1330 ◽  
Author(s):  
H.F.W. Dekkers ◽  
V. Prajapati ◽  
S. Van Elshocht ◽  
E. Vancoille

ABSTRACTIn this work the release of atomic hydrogen from SiNx:H films is investigated. Thermal treatment as well as UV-illumination induces the formation of H2, increasing the tensile stress in the film. N-rich SiNx:H films release hydrogen only by UV-illumination, indicating involvement of charge trapping. Ab initio calculations show a possible reaction path for the release and diffusion of protons that also explain the diffusion of hydrogen into Si substrates.

2008 ◽  
Vol 59 ◽  
pp. 198-203 ◽  
Author(s):  
Aurelia Herrmann ◽  
Martin Balden ◽  
M. Rasiński ◽  
Harald Bolt

Thin graded W/Cu coatings plus subsequent heat treatment at 800°C are used to improve the interfacial adhesion between W and Cu. Specimen with ~500 nm thick graded W/Cu coatings were characterized and analyzed after thermal treatment at 550°C, 650°C and 800°C. At 800°C a significant change in the nanostructure is observed. The better adhesion is caused by W/W grain boundary diffusion processes and Oswald ripening of the nanometre-sized grains leading to their interconnection between each other and the W substrate. The phase and texture analysis of graded W/Cu indicates grain growth and diffusion processes of pure W and Cu. The stress analysis shows that the changes in the nanostructure of the W/Cu coatings correlates to the stress relieve of W at temperature starting from 650°C. After cooling of the coating to RT the residue intrinsic tensile stress is caused by thermal mismatches of the substrate and the 100% W layer of the coating.


2013 ◽  
Vol 117 (19) ◽  
pp. 10059-10069 ◽  
Author(s):  
R. Méndez-Camacho ◽  
R. A. Guirado-López

1988 ◽  
Vol 19 (1) ◽  
pp. 67-72 ◽  
Author(s):  
D. T. Peterson ◽  
B. J. Schlader

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