Proton formation and diffusion in amorphous SiNx:H
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ABSTRACTIn this work the release of atomic hydrogen from SiNx:H films is investigated. Thermal treatment as well as UV-illumination induces the formation of H2, increasing the tensile stress in the film. N-rich SiNx:H films release hydrogen only by UV-illumination, indicating involvement of charge trapping. Ab initio calculations show a possible reaction path for the release and diffusion of protons that also explain the diffusion of hydrogen into Si substrates.
2014 ◽
Vol 148
(3)
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pp. 533-539
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2019 ◽
Vol 123
(19)
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pp. 12052-12061
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2008 ◽
Vol 59
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pp. 198-203
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2013 ◽
Vol 117
(19)
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pp. 10059-10069
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1991 ◽
Vol 32
(10)
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pp. 1125-1136
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