Cluster Ion Beam Processing: Review of Current and Prospective Applications

2011 ◽  
Vol 1354 ◽  
Author(s):  
Isao Yamada ◽  
Joseph Khoury
Keyword(s):  
Surface Analysis ◽  
Energy Surface ◽  
Ion Beam ◽  
Industrial Applications ◽  
Low Energy ◽  
High Rate ◽  
Cluster Ions ◽  
Current Status ◽  
Cluster Ion ◽  
Beam Characteristics

ABSTRACTCluster ion beam processes which employ ions comprised of a few hundred to several thousand atoms are being developed into a new field of ion beam technology. The processes are characterized by low energy surface interaction effects, lateral sputtering phenomena and high-rate chemical reaction effects. This paper reviews the current status of studies of the fundamental cluster ion beam characteristics as they apply to nanoscale processing and present industrial applications. As new prospective applications, techniques are now being developed to employ cluster ions in surface analysis tools such as XPS and SIMS and to modify surfaces of bio-materials. Results related to these new projects will also be reviewed.

Gas Cluster Ion Beam Technology for Nano-Fabrication

2012 ◽  
Vol 82 ◽  
pp. 1-8
Author(s):  
Noriaki Toyoda ◽  
Isao Yamada
Keyword(s):  
Ion Beam ◽  
Surface Region ◽  
Local Area ◽  
Industrial Applications ◽  
Ion Beams ◽  
Low Energy ◽  
Cluster Ions ◽  
Nano Fabrication ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam

A gas cluster is an aggregate of a few to several thousands of gaseous atoms or molecules, and it can be accelerated to a desired energy after ionization. Since the kinetic energy of an atom in a cluster is equal to the total energy divided by the cluster size, a quite-low-energy ion beam can be realized. Although it is difficult to obtain low-energy monomer ion beams due to the space charge effect, equivalently low-energy ion beams can be realized by using cluster ion beams at relatively high acceleration voltages. Not only the low-energy feature but also the dense energy depositions at a local area are important characteristics of the irradiation by gas cluster ions. All of the impinging energy of a gas cluster ion is deposited at the surface region, and this dense energy deposition is the origin of enhanced sputtering yields, crater formation, shockwave generation, and other non-linear effects. GCIBs are being used for industrial applications where a nano-fabrication process is required. Surface smoothing, shallow doping, low-damage etching, trimming, and thin-film formations are promising applications of GCIBs. In this paper, fundamental irradiation effects of GCIB are discussed from the viewpoint of low-energy irradiation, sputtering, and dense energy depositions. Also, various applications of GCIB for nano-fabrications are explained.

Size Dependence of Bombardment Characteristics Produced by Cluster Ion Beams

1997 ◽  
Vol 504 ◽  
Author(s):  
T. Seki ◽  
M. Tanomura ◽  
T. Aoki ◽  
J. Matsuo ◽  
I. Yamada
Keyword(s):  
Ion Beam ◽  
Local Area ◽  
Carbon Cluster ◽  
High Rate ◽  
Cluster Ions ◽  
Scanning Tunneling ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Ion Impact ◽  
The Impact

ABSTRACTCluster ion beam processes provide new surface modification techniques, such as surface smoothing, high rate sputtering and very shallow implantation, because of the unique interactions between cluster and surface atoms. To understand interactions with cluster and surface, Scanning Tunneling Microscope (STM) observations have been done for single impact traces.Highly Oriented Pyrolitic Graphite (HOPG) surfaces were bombarded by carbon cluster ions (Va≤300kV), and large ridges and craters have been observed as a result of single cluster ion impact. The impact site diameters are proportional to the cluster size up to 10 atoms, and increase drastically for cluster sizes above 10. This indicates that non-linear multiple collisions occur only when a local area is bombarded by more than 10 atoms at the same time.

High-speed Processing with Reactive Cluster Ion Beams

2004 ◽  
Vol 843 ◽  
Author(s):  
Toshio Seki ◽  
Jiro Matsuo
Keyword(s):  
High Speed ◽  
Ion Beam ◽  
Beam Current ◽  
Ion Beams ◽  
High Rate ◽  
Cluster Ions ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Sputtering Yield ◽  
Reactive Cluster

ABSTRACTCluster ion beam processes can produce high rate sputtering with low damage in comparison with monomer ion beam processes. Especially, it is expected that extreme high rate sputtering can be obtained using reactive cluster ion beams. Reactive cluster ion beams, such as SF6, CF4, CHF3, and CH2F2, were generated and their cluster size distributions were measured using Time-of-Flight (TOF) method. Si substrates were irradiated with the reactive cluster ions at the acceleration energy of 5–65 keV. Each sputtering yield was increased with acceleration energy and was about 1000 times higher than that of Ar monomer ions. The sputtering yield of SF6 cluster ions was about 4600 atoms/ion at 65 keV. With this beam, 12 inches wafers can be etched 0.5 μm per minute at 1 mA of beam current. The TOF measurement showed that the size of SF6 cluster was about 550 molecules and the number of fluorine atoms in a SF6 cluster was about 3300. If the sputtered product was SiF, the yield has to be less than 3300 atoms/ion. These results indicate that the reactive cluster ions etch targets not only chemically, but also physically. This high-speed processing with reactive cluster ion beam can be applied to fabricate nano-devices.

scholarly journals Сглаживание тонких поликристаллических пленок AlN кластерными ионами аргона

2021 ◽  
Vol 47 (6) ◽  
pp. 44
Author(s):  
И.В. Николаев ◽  
Н.Г. Коробейщиков ◽  
М.А. Роенко ◽  
П.В. Гейдт ◽  
В.И. Струнин
Keyword(s):  
Aluminum Nitride ◽  
Ion Beam ◽  
Low Energy ◽  
Cluster Ions ◽  
Polycrystalline Aluminum ◽  
Etching Depth ◽  
Spatial Frequencies ◽  
Wide Range ◽  
Cluster Ion ◽  
Thin Polycrystalline

The possibility of surface modification of thin polycrystalline aluminum nitride films by bombardment with argon cluster ion beam is investigated. The processing was carried out with high- (105 eV/atom) and low-energy (10 eV/atom) cluster ions. Using the spectral function of roughness, a highly efficient smoothing of the surface of nanostructured thin films of aluminum nitride was demonstrated in a wide range of spatial frequencies (ν = 0.02–128 μm-1) and at small etching depth (<100 nm).

High-speed Processing with Cluster Ion Beams

2003 ◽  
Vol 792 ◽  
Author(s):  
Toshio Seki ◽  
Jiro Matsuo
Keyword(s):  
High Speed ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Ion Beams ◽  
High Rate ◽  
Cluster Ions ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Sputtering Yield ◽  
Reactive Cluster

ABSTRACTCluster ion beam processes can produce high rate sputtering with low damage in comparison with monomer ion beam processes. Especially, it is expected that extreme high rate sputtering can be obtained using reactive cluster ion beams. High current SF6 cluster ion beams were recently obtained with new modifications in the basic cluster ion beam technique. The cluster size distribution was measured with Time-of-Flight (TOF) method and the mean size of cluster was about 500 molecules. Si substrates were irradiated with SF6 cluster ions at the acceleration energy of 5–45 keV. Sputtering yield with SF6 cluster ions was increased with acceleration energy and was about 2300 atoms/ion at 45 keV. The sputtering yield was about 1000 times higher than that of Ar monomer ions and was also higher than that of Ar cluster ions. It was found that reactive sputtering occurred with SF6 cluster ion irradiation. These results indicate that high-speed fabrication can be realized with reactive cluster ion irradiation at high energy.

SPUTTERING WITH GAS CLUSTER-ION BEAMS

1996 ◽  
Vol 03 (01) ◽  
pp. 1017-1021 ◽  
Author(s):  
J. MATSUO ◽  
M. AKIZUKI ◽  
J. NORTHBY ◽  
G.H. TAKAOKA ◽  
I. YAMADA
Keyword(s):  
Ion Irradiation ◽  
Removal Rate ◽  
Ion Beam ◽  
Solid Surfaces ◽  
Silicon Surfaces ◽  
Cluster Ions ◽  
Mass Filter ◽  
Cluster Bombardment ◽  
Cluster Ion Beams ◽  
Cluster Ion

A high-current (~100 nA) cluster-ion-beam equipment with a new mass filter has been developed to study the energetic cluster-bombardment effects on solid surfaces. A dramatic reduction of Cu concentration on silicon surfaces has been achieved by 20-keV Ar cluster (N~3000) ion bombardment. The removal rate of Cu with cluster ions is two orders of magnitude higher than that with monomer ions. A significantly higher sputtering yield is expected for cluster-ion irradiation. An energetic cluster-ion beam is quite suitable for removal of metal.

scholarly journals Sputtering of silicon nanopowders by an argon cluster ion beam

2019 ◽  
Vol 10 ◽  
pp. 135-143 ◽  
Author(s):  
Xiaomei Zeng ◽  
Vasiliy Pelenovich ◽  
Zhenguo Wang ◽  
Wenbin Zuo ◽  
Sergey Belykh ◽  
...  
Keyword(s):  
Energy Dependence ◽  
Ion Beam ◽  
Finite Size ◽  
Low Energy ◽  
Finite Size Effect ◽  
Target Density ◽  
Cluster Ion ◽  
Sputtering Yield ◽  
Beam Parameters ◽  
Silicon Nanopowders

In this work an Ar+ cluster ion beam with energy in the range of 10–70 keV and dose of 7.2 × 1014–2.3 × 1016 cluster/cm2 was used to irradiate pressed Si nanopowder targets consisting of particles with a mean diameter of 60 nm. The influence of the target density and the cluster ion beam parameters (energy and dose) on the sputtering depth and sputtering yield was studied. The sputtering yield was found to decrease with increasing dose and target density. The energy dependence demonstrated an unusual non-monotonic behavior. At 17.3 keV a maximum of the sputtering yield was observed, which was more than forty times higher than that of the bulk Si. The surface roughness at low energy demonstrates a similar energy dependence with a maximum near 17 keV. The dose and energy dependence of the sputtering yield was explained by the competition of the finite size effect and the effect of debris formation.

Application of Cluster Ion Beam Smoothing to SiC and YBCO Surfaces

1999 ◽  
Vol 585 ◽  
Author(s):  
D. Fathy ◽  
O. W. Holland ◽  
R. Liu ◽  
J. Wosik ◽  
W. K Chu
Keyword(s):  
Surface Topography ◽  
Ion Irradiation ◽  
Ion Beam ◽  
High Temperature Superconductors ◽  
Cluster Ions ◽  
Microwave Surface Resistance ◽  
Average Roughness ◽  
Cross Sectional ◽  
Cluster Ion Beams ◽  
Cluster Ion

AbstractOptimization of the surface topography, especially in high-temperature superconductors (HTS) and silicon carbide is crucial for device processing. Surface smoothing in these materials was investigated using Gas Cluster Ion Beams (GCIB) capable of delivering cluster ions of ≥ 2000 Ar atoms with energies of up to 30keV. Examination of the surface topography after cluster-ion irradiation was done using cross-sectional transmission electron microscopy (TEM) and atomic force microscopy (AFM). The results indicate that typical as-deposited YBCO films on MgO substrates have an average roughness of the order of 40 nm, and interpeak distance between 300–600 nm. Application of GCIB to the surface planarization reduces the roughness to only 10 nm. Also power handling and microwave surface resistance of the YBCO film and its relationship to surface smoothness are reported. Similar observations using bulk SiC are discussed.

Cluster Ion Beam Process for Nanofabrication

2007 ◽  
Vol 1020 ◽  
Author(s):  
Isao Yamada ◽  
Noriaki Toyoda
Keyword(s):  
Ion Beam ◽  
Industrial Applications ◽  
Significant Events ◽  
Junction Formation ◽  
Cluster Ion Beams ◽  
Experimental Laboratory ◽  
Cluster Ion ◽  
Linear Effects ◽  
Gas Cluster Ion Beam ◽  
Cluster Beams

AbstractThis paper reviews gas cluster ion beam (GCIB) technology, including the generation of cluster beams, fundamental characteristics of cluster ion to solid surface interactions, emerging industrial applications, and identification of some of the significant events which occurred as the technology has evolved into what it is today. More than 20 years have passed since the author (I.Y) first began to explore feasibility of processing by gas cluster ion beams at the Ion Beam Engineering Experimental Laboratory of Kyoto University. Processes employing ions of gaseous material clusters comprised of a few hundred to many thousand atoms are now being developed into a new field of ion beam technology. Cluster-surface collisions produce important non-linear effects which are being applied to shallow junction formation, to etching and smoothing of semiconductors, metals, and dielectrics, to assisted formation of thin films with nano-scale accuracy, and to other surface modification applications.

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