AlGaN Channel HEMT with Extremely High Breakdown Voltage

2011 ◽  
Vol 1324 ◽  
Author(s):  
Takuma Nanjo ◽  
Misaichi Takeuchi ◽  
Akifumi Imai ◽  
Yousuke Suzuki ◽  
Muneyoshi Suita ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
High Electron ◽  
Field Plate ◽  
Electron Mobility Transistors ◽  
Doping Technique ◽  
Resistive Source

ABSTRACTA channel layer substitution of a wider bandgap AlGaN for a conventional GaN in high electron mobility transistors (HEMTs) is an effective method of enhancing the breakdown voltage. Wider bandgap AlGaN, however, should also increase the ohmic contact resistance. Si ion implantation doping technique was utilized to achieve sufficiently low resistive source/drain contacts. The fabricated AlGaN channel HEMTs with the field plate structure demonstrated good pinch-off operation with sufficiently high drain current density of 0.5 A/mm without noticeable current collapse. The obtained maximum breakdown voltages was 1700 V in the AlGaN channel HEMT with the gate-drain distance of 10 μm. These remarkable results indicate that AlGaN channel HEMTs could become future strong candidates for not only high-frequency devices such as low noise amplifiers but also high-power devices such as switching applications.

scholarly journals On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field

AIP Advances ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 085004 ◽  
Author(s):  
Isabel Harrysson Rodrigues ◽  
David Niepce ◽  
Arsalan Pourkabirian ◽  
Giuseppe Moschetti ◽  
Joel Schleeh ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Angular Dependence ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Extrinsic and Intrinsic Modeling of InGaAs/InAlAs pHEMT for Wireless Applications

2015 ◽  
Vol 815 ◽  
pp. 369-373
Author(s):  
Norhawati Ahmad ◽  
S.S. Jamuar ◽  
M. Mohammad Isa ◽  
Siti Salwa Mat Isa ◽  
Muhammad Mahyiddin Ramli ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
High Electron ◽  
Wireless Applications ◽  
Electron Mobility Transistors ◽  
Low Leakage ◽  
The University ◽  
University Of Manchester

This paper presents the linear modelling of high breakdown InP pseudomorphic High Electron Mobility Transistors (pHEMT) that have been developed and fabricated at the University of Manchester (UoM) for low noise applications mainly for the Square Kilometre Array (SKA) project. The ultra-low leakage properties of a novel InGaAs/InAlAs/InP pHEMTs structure were used to fabricate a series of transistor with total gate width ranging from 0.2 mm to 1.2 mm. The measured DC and S-Parameters data from the fabricated devices were then used for the transistors’ modelling. The transistors demonstrated to operate up to frequencies of 25 GHz. These transistors models are used in the design of Low Noise Amplifiers (LNAs) using fully Monolithic Microwave Integrated Circuit (MMIC) technology.

scholarly journals Влияние технологии двойного травления под затвор на параметры HEMT транзисторов на подложках GaAs и InP

2021 ◽  
Vol 55 (10) ◽  
pp. 890
Author(s):  
В.А. Беляков ◽  
И.В. Макарцев ◽  
А.Г. Фефелов ◽  
С.В. Оболенский ◽  
А.П. Васильев ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Breakdown Voltage ◽  
Cutoff Frequency ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Inp Substrate ◽  
Current Voltage ◽  
Unity Gain

High electron mobility transistors (HEMTs) have been developed based on InAlAs/InGaAs heterostructures on an InP substrate, with a transconductance of about 1000 mS/mm, a reverse breakdown voltage of more than 10 V and a unity-gain cutoff frequency is 140 GHz. In addition, HEMT transistors based on AlGaAs/InGaAs/GaAs heterostructures on a GaAs substrate with double gate recessing technology have been developed. This transistors demonstrate a maximum measured transconductance of the current-voltage characteristic of 520 mS/mm, a maximum drain current of 670 mA/mm, and a gate-drain breakdown voltage of 14 V and a unity-gain cut-off frequency is 120 GHz. Due to the increased breakdown voltage, the developed transistors have been used in monolithic integrated circuits of millimeter-wave power amplifiers with an output power of more than 110 mW.

Effect of Deep Trap on Breakdown Voltage in AlGaN/GaN HEMTs

2008 ◽  
Vol 600-603 ◽  
pp. 1345-1348 ◽  
Author(s):  
Akira Nakajima ◽  
Shuichi Yagi ◽  
Mitsuaki Shimizu ◽  
Hajime Okumura
Keyword(s):  
Breakdown Voltage ◽  
Device Simulation ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Deep Trap ◽  
High Electron ◽  
Surface Trap ◽  
Electron Mobility Transistors ◽  
Current Collapse ◽  
Good Agreement

The effect of AlGaN surface traps on breakdown voltage VB and drain current collapse in AlGaN/GaN high electron mobility transistors (HEMTs) were investigated using experimental measurement and numerical simulation. The drain current transient due to surface traps was systematically measured and analyzed, and the activation energy of a surface trap was evaluated as approximately 0.7 eV. Results from the device simulation of VB in HEMTs were in good agreement with the experimental results when assuming surface traps. The results indicate that surface traps increase VB, and induce a crucial current collapse.

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