The Semiconductor p–n Junction “Ultimate Lamp”
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AbstractSimple diagrams are used to show the transformation of a thin sample of intrinsic, direct-gap semiconductor from an ideal “flat-band” photopumped recombination-radiation light source into a current-driven, p–n junction “ultimate lamp,” a light-emitting diode.
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2014 ◽
Vol 23
(1)
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pp. 64-68
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2018 ◽
Vol 29
(1)
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pp. 75-81
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2018 ◽
Vol 18
(9)
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pp. 6029-6032
1995 ◽
Vol 66
(12)
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pp. 5469-5472
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