Solid-State X-Ray Imagers

MRS Bulletin ◽  
2002 ◽  
Vol 27 (11) ◽  
pp. 889-893 ◽  
Author(s):  
Yoshihiro Izumi ◽  
Yasukuni Yamane
Keyword(s):  
Solid State ◽  
Liquid Crystal Displays ◽  
Direct Conversion ◽  
Medical Diagnostics ◽  
Amorphous Selenium ◽  
Great Promise ◽  
Active Matrix ◽  
X Ray ◽  
Digital Imaging Systems ◽  
Matrix Liquid

AbstractNew solid-state x-ray imagers known as digital flat-panel x-ray detectors are about to be launched in the field of medical diagnostics. The combination of active-matrix technologies developed for active-matrix liquid-crystal displays and x-ray detection materials constitutes the basis of the detectors. Recently, two kinds of direct-conversion detectors have been developed in order to improve their performance. One is a detector using a thick x-ray photoconductor (∼1 mm) made of amorphous selenium, and the other is a novel hybrid panel detector using an x-ray photoconductor made of polycrystalline Cd(Zn)Te. As a result, excellent resolution and good linear sensitivity have been achieved. These detectors have great promise as next-generation digital imaging systems for fluoroscopy and radiography.

Illuminators based on composite LEDs for multifunctional high-luminance active-matrix liquid-crystal displays

2011 ◽  
Vol 78 (7) ◽  
pp. 444 ◽  
Author(s):  
V. A. Bol’shukhin ◽  
V. S. Ilyasov ◽  
N. P. Soshchin ◽  
V. N. Ulasyuk
Keyword(s):  
Liquid Crystal ◽  
Liquid Crystal Displays ◽  
High Luminance ◽  
Active Matrix ◽  
Matrix Liquid

High Temperature off Current in a-Si TFTS - Effect of Process and Structure

1991 ◽  
Vol 219 ◽  
Author(s):  
George E. Possin
Keyword(s):  
Room Temperature ◽  
Liquid Crystal Displays ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Hole Injection ◽  
Electron Conduction ◽  
Active Matrix ◽  
Silicon Thickness ◽  
Matrix Liquid

ABSTRACTThe OFF current in a-Si TFTs is an important parameter, especially for applications such as active matrix liquid crystal displays. In some demanding applications operation at 70°C or higher is required. This paper reports studies of the OFF current limiting mechanisms at room temperature and above. It is shown that the limiting mechanisms are hole injection from the drain junction at room temperature and electron conduction at higher temperatures. The importance of silicon thickness and interface state density at the passivation interface is stressed.

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