Physical Origins of Intrinsic Stresses in Volmer–Weber Thin Films

MRS Bulletin ◽  
2002 ◽  
Vol 27 (1) ◽  
pp. 19-25 ◽  
Author(s):  
Jerrold A. Floro ◽  
Eric Chason ◽  
Robert C. Cammarata ◽  
David J. Srolovitz
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Stress Evolution ◽  
Island Nucleation ◽  
Stress Effects ◽  
Compressive Stresses ◽  
Island Coalescence ◽  
Made In

AbstractAs-deposited thin films grown by vapor deposition often exhibit large intrinsic stresses that can lead to film failure. While this is an “old” materials problem, our understanding has only recently begun to evolve in a more sophisticated fashion. Sensitive real-time measurements of stress evolution during thin-film deposition reveal a generic compressive–tensile–compressive behavior that correlates with island nucleation and growth, island coalescence, and postcoalescence film growth. In this article, we review the fundamental mechanisms that can generate stresses during the growth of Volmer–Weber thin films. Compressive stresses in both discontinuous and continuous films are generated by surface-stress effects. Tensile stresses are created during island coalescence and grain growth. Compressive stresses can also result from the flux-driven incorporation of excess atoms within grain boundaries. While significant progress has been made in this field recently, further modeling and experimentation are needed to quantitatively sort out the importance of the different mechanisms to the overall behavior.

scholarly journals Controlling the flux of reactive species: a case study on thin film deposition in an aniline/argon plasma

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
D. Sciacqua ◽  
C. Pattyn ◽  
A. Jagodar ◽  
E. von Wahl ◽  
T. Lecas ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Argon Plasma ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Capacitively Coupled ◽  
Low Temperature Plasmas ◽  
Free Films

Abstract The plasma based synthesis of thin films is frequently used to deposit ultra-thin and pinhole-free films on a wide class of different substrates. However, the synthesis of thin films by means of low temperature plasmas is rather complex due to the great number of different species (neutrals, radicals, ions) that are potentially involved in the deposition process. This contribution deals with polymerization processes in a capacitively coupled discharge operated in a mixture of argon and aniline where the latter is a monomer, which is used for the production of plasma-polymerized polyaniline, a material belonging to the class of conductive polymers. This work will present a particular experimental approach that allows to (partially) distinguish the contribution of different species to the film growth and thus to control to a certain extent the properties of the resulting material. The control of the species flux emerging from the plasma and contributing to the film growth also sheds new light on the deposition process, in particular with respect to the role of the ion component. The analysis of the produced films has been performed by means of Fourier Transform Infrared spectroscopy (FTIR) and Near Edge X-ray Absorption Fine Structure spectroscopy (NEXAFS).

Confined Capillary Stresses During the Initial Growth of Thin Films on Amorphous Substrates

2002 ◽  
Vol 69 (4) ◽  
pp. 425-432 ◽  
Author(s):  
S. P. A. Gill ◽  
H. Gao ◽  
V. Ramaswamy ◽  
W. D. Nix
Keyword(s):  
Compressive Stress ◽  
Film Growth ◽  
Thin Film Deposition ◽  
Capillary Forces ◽  
Film Deposition ◽  
Initial Growth ◽  
Element Analysis ◽  
Ceramic Substrates ◽  
Compressive Stresses ◽  
Amorphous Substrates

Changes in substrate curvature indicating the existence of compressive stress in isolated crystallites are commonly observed during the initial stages of thin film deposition of metals on glass or ceramic substrates. Following the suggestion of Abermann et al. (R. Abermann et al., 1978, Thin Solid Films, 52, p. 215), we attribute the origin of this compressive stress to the action of capillary forces during film growth. As new atomic layers are deposited, the capillary forces acting on atoms near the surface are stored as transformation strains in the bulk of the crystallites. To test this concept, we propose three models for evaluating the capillary strains and their induced compressive stresses in a crystalline. A finite element analysis is performed to show that the model predictions agree well with experimental data.

Low-Temperature (450 °C) Poly-Si Thin Film Deposition on SiO2 and Glass using a Microcrystalline-Si Seed Layer

1997 ◽  
Vol 472 ◽  
Author(s):  
D. M. Wolfe ◽  
F. Wang ◽  
G. Lucovsky
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Seed Layer ◽  
Film Growth ◽  
Hydrogen Plasma ◽  
Microstructural Characterization ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Remote Plasma ◽  
Si Substrates

ABSTRACTA low-temperature (450 °C), remote plasma-assisted CVD process for deposition of poly-Si thin films on SiO2 and Corning 7059 glass in which interface formation is separated from bulk film growth has been developed. This approach is based on first depositing an ultra-thin (<100 Å) microcrystalline-Si seed layer onto the oxide in order to provide nucleation sites at which low-temperature poly-Si film growth can be initiated. Conditions for poly-Si film deposition were optimized by using a low-temperature, remote plasma process that had previously yielded epitaxial growth of Si thin films on crystalline Si substrates. Microstructural characterization was performed on poly-Si films grown with different seed layer thicknesses, and additionally with exposure of this seed layer to a predeposition hydrogen plasma treatment. Results demonstrated that the seed layer thickness and surface morphology played a significant role in promoting crystallinity in the poly-Si overlayer. For example using deposition conditions that yielded epitaxial film growth on Si substrates, films deposited on un-seeded oxide substrates were amorphous, whereas those deposited using a seed layer were polycrystalline. This indicated that interfacial nucleation was the rate limiting step in promoting the low-temperature deposition of poly-Si thin films.

Effect of Nature of the Precursor on Crystallinity and Microstructure of MOCVD-Grown ZrO2 Thin Films

2002 ◽  
Vol 745 ◽  
Author(s):  
M. S. Dharmaprakash ◽  
S. A. Shivashankar
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Dielectric Behavior ◽  
Film Deposition ◽  
Molecular Structures ◽  
Cubic Phase ◽  
Zirconium Complexes ◽  
Substrate Temperatures

ABSTRACTIn the present work, we report the deposition of zirconia thin films on Si(100) at various substrate temperatures by low-pressure metalorganic chemical vapor deposition (MOCVD). Three different zirconium complexes, viz., tetrakis(2,4-pentadionato)zirconium(IV), [Zr(pd)4], tetrakis(2,2,6,6-tetramethyl-3,5-heptadionato)zirconium(IV), [Zr(thd)4], and tetrakis(t-butyl-3-oxo-butanoato)zirconium(IV), [Zr(tbob)4] are used as precursors. The relationship between the molecular structures of the precursors and their thermal properties, as examined by TG/DTA is presented. The films deposited using these precursors have distinctly different morphology, though all of them are of the cubic phase. The films grown from Zr(thd)4 are well crystallized, showing faceted growth at 575°C, whereas the films grown from Zr(pd)4 and Zr(tbob)4 are not well crystallized, and display cracks. These differences in the observed microstructure may be attributed to the different chemical decomposition pathways of the precursors during the film growth, which influence the nucleation and the growth processes. This is also evidenced by the different kinetics of growth from these three precursors under otherwise identical CVD conditions. The details of thin film deposition, and film microstructure analysis by XRD and SEM is presented. The dielectric behavior of the films deposited from different precursors, as studied by C-V measurements, are compared.

Surface stress model for intrinsic stresses in thin films

2000 ◽  
Vol 15 (11) ◽  
pp. 2468-2474 ◽  
Author(s):  
R. C. Cammarata ◽  
T. M. Trimble ◽  
D. J. Srolovitz
Keyword(s):  
Thin Films ◽  
Surface Stress ◽  
Sudden Change ◽  
Stress Generation ◽  
Intrinsic Stress ◽  
Stress Model ◽  
Island Growth ◽  
Stress Effects ◽  
Compressive Stresses ◽  
Island Coalescence

A simple model was presented for intrinsic stress generation in thin films resulting from surface stress effects. This mechanism can explain the origin of compressive stresses often observed during island growth prior to coalescence, as well as intrinsic compressive stresses reported for certain continuous, fully grown films. In some cases, surface stress effects may contribute to a sudden change in the intrinsic stress during island coalescence.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

Phenethylammonium bismuth halides: from single crystals to bulky-organic cation promoted thin-film deposition for potential optoelectronic applications

2019 ◽  
Vol 7 (36) ◽  
pp. 20733-20741 ◽  
Author(s):  
Mehri Ghasemi ◽  
Miaoqiang Lyu ◽  
Md Roknuzzaman ◽  
Jung-Ho Yun ◽  
Mengmeng Hao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Single Crystals ◽  
Organic Cation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Optoelectronic Applications ◽  
Excellent Stability

The phenethylammonium cation significantly promotes the formation of fully-covered thin-films of hybrid bismuth organohalides with low surface roughness and excellent stability.

scholarly journals A FRACTAL MODEL FOR THE FIRST STAGES OF THIN FILM GROWTH

Fractals ◽  
1996 ◽  
Vol 04 (03) ◽  
pp. 321-329 ◽  
Author(s):  
PABLO JENSEN ◽  
ALBERT-LÁSZLÓ BARABÁSI ◽  
HERNÁN LARRALDE ◽  
SHLOMO HAVLIN ◽  
H. EUGENE STANLEY
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Dynamical Evolution ◽  
Thin Film Deposition ◽  
Fractal Model ◽  
Film Deposition ◽  
Thin Film Growth ◽  
Small Cluster ◽  
Diffusion Controlled ◽  
Cluster Diffusion

In this paper, we briefly review a model that describes the diffusion-controlled aggregation exhibited by particles as they are deposited on a surface. This model allows us to understand many experiments of thin film deposition. In the Sec. 1, we describe the model, which incorporates deposition, particle and cluster diffusion, and aggregation. In Sec. 2, we study the dynamical evolution of the model. Finally, we analyze the effects of small cluster mobility and show that the introduction of cluster diffusion dramatically affects the dynamics of film growth. Some of these effects can be tested experimentally.

INK JET PRINTED THIN FILMS ON GLASS AND POLYIMIDE SUBSTRATES

2013 ◽  
Vol 37 (3) ◽  
pp. 873-883 ◽  
Author(s):  
Tsai-Cheng Li ◽  
Rwei-Ching Chang ◽  
Yen-Choung Li
Keyword(s):  
Thin Films ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Electric Resistance ◽  
Ink Jet Printing ◽  
Sputtered Films ◽  
Ink Jet ◽  
Jet Printing ◽  
Conductive Thin Films

Silver conductive thin films deposited on glass and polyimide substrates by using ink jet printing are studied in this work. Characterization of the printed thin films and comparison with sputtered films are investigated. The micro texture, residual stress, adhesion, hardness, optical reflectance, and electric resistance of the thin films are discussed. The result shows that the ink jet printing has the possibility to replace sputtering in thin film deposition, especially for the polymer substrates.

scholarly journals Generation of Charged Ti Nanoparticles and Their Deposition Behavior with a Substrate Bias during RF Magnetron Sputtering

Coatings ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 443
Author(s):  
Ji-Hye Kwon ◽  
Du-Yun Kim ◽  
Nong-Moon Hwang
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Film Growth ◽  
Film Deposition ◽  
Calculated Density ◽  
X Ray ◽  
Positively Charged ◽  
Made In ◽  
Ti Films

This study is based on the film growth by non-classical crystallization, where charged nanoparticles (NPs) are the building block of film deposition. Extensive studies about the generation of charged NPs and their contribution to film deposition have been made in the chemical vapor deposition (CVD) process. However, only a few studies have been made in the physical vapor deposition (PVD) process. Here, the possibility for Ti films to grow by charged Ti NPs was studied during radio frequency (RF) sputtering using Ti target. After the generation of charged Ti NPs was confirmed, their influence on the film quality was investigated. Charged Ti NPs were captured on amorphous carbon membranes with the electric bias of −70 V, 0 V, +5 V, +15 V and +30 V and examined by transmission electron microscopy (TEM). The number density of the Ti NPs decreased with increasing positive bias, which showed that some of Ti NPs were positively charged and repelled by the positively biased TEM membrane. Ti films were deposited on Si substrates with the bias of −70 V, 0 V and +30 V and analyzed by TEM, field-emission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and X-ray reflectivity (XRR). The film deposited at −70 V had the highest thickness of 180 nm, calculated density of 4.974 g/cm3 and crystallinity, whereas the film deposited at +30 V had the lowest thickness of 92 nm, calculated density of 3.499 g/cm3 and crystallinity. This was attributed to the attraction of positively charged Ti NPs to the substrate at −70 V and to the landing of only small-sized neutral Ti NPs on the substrate at +30 V. These results indicate that the control of charged NPs is necessary to obtain a high quality thin film at room temperature.

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