Enhanced Diffusion in Silicon Processing

MRS Bulletin ◽  
2000 ◽  
Vol 25 (6) ◽  
pp. 39-44 ◽  
Author(s):  
Nicholas Cowern ◽  
Conor Rafferty
Keyword(s):  
Point Defects ◽  
Atomic Scale ◽  
Dopant Atom ◽  
Ideal Crystal ◽  
Crystalline Materials ◽  
Silicon Lattice ◽  
Enhanced Diffusion ◽  
Interstitial Atoms ◽  
Scale Point ◽  
Grade Silicon

Semiconductor-grade silicon is one of the most perfect crystalline materials that can be fabricated. It contains less than 1 ppb of unintended impurities and negligible twins or dislocations. Dopants can diffuse in this near-ideal crystal only by interacting with atomic-scale point defects: interstitial atoms or vacancies. These defects migrate through the silicon lattice, occasionally binding with a dopant atom and displacing it by one or more lattice positions.

Defects and Diffusion in Silicon: An Overview

1999 ◽  
Vol 568 ◽  
Author(s):  
N.E.B. Cowern ◽  
G. Mannino ◽  
P.A. Stolk ◽  
M.J.J. Theunissen
Keyword(s):  
Point Defects ◽  
Technology Development ◽  
Silicon Crystal ◽  
Atomic Scale ◽  
Extended Defects ◽  
High Concentration ◽  
Concentration Gradients ◽  
Enhanced Diffusion ◽  
Impurity Atoms ◽  
And Diffusion

ABSTRACTAt the current pace of semiconductor technology development, transistor dimensions in advanced IC products will approach the range of a few tens of nanometers within the next decade. This presents a major challenge for our understanding of defects and diffusion in these tiny devices during processing. In response, an almost explosive growth in research on process physics has taken place at universities, national institutes and industry research labs worldwide. The central issue is the phenomenon of nonequilibrium diffusion driven by processing steps such as oxide growth, high concentration gradients of impurities, and annealing of damage caused by ion implantation. Nonequilibrium diffusion arises from perturbations to the natural thermal equilibrium concentrations of point defects - interstitial atoms and vacancies - in the silicon crystal. This paper gives a snapshot of our current understanding of the atomic-scale interactions between point defects and impurity atoms, extended defects and interfaces, as revealed by recent experimental and theoretical studies. The paper emphasizes the important role played by defect cluster ripening during transient enhanced diffusion and dopant activation.

Atomic Scale Structure-Property Relationships of Defects and Interfaces in Ceramics

1998 ◽  
Vol 4 (S2) ◽  
pp. 556-557
Author(s):  
S. Stemmer ◽  
G. Duscher ◽  
E. M. James ◽  
M. Ceh ◽  
N.D. Browning
Keyword(s):  
Point Defects ◽  
High Resolution Electron Microscopy ◽  
Complete Characterization ◽  
Atomic Scale ◽  
Structure Property ◽  
Defect Engineering ◽  
Impurity Atoms ◽  
Structure Property Relationships ◽  
Resolution Electron ◽  
Scale Composition

The evaluation of the two dimensional projected atom column positions around a defect or an interface in an electronic ceramic, as it has been performed in numerous examples by (quantitative) conventional high-resolution electron microscopy (HRTEM), is often not sufficient to relate the electronic properties of the material to the structure of the defect. Information about point defects (vacancies, impurity atoms), and chemistry or bonding changes associated with the defect or interface is also required. Such complete characterization is a necessity for atomic scale interfacial or defect engineering to be attained.One instructive example where more than an image is required to understand the structure property relationships, is that of grain boundaries in Fe-doped SrTi03. Here, the different formation energies of point defects cause a charged barrier at the boundary, and a compensating space charge region around it. The sign and magnitude of the barrier depend very sensitively on the atomic scale composition and chemistry of the boundary plane.

Effect of Energy and Dose on Transient-Enhanced Diffusion and Defect Microstructure in Low Energy High Dose As+ Implanted Si

1996 ◽  
Vol 438 ◽  
Author(s):  
V. Krishnamoorthy ◽  
D. Venables ◽  
K. Moeller ◽  
K. S. Jones ◽  
B. Freer
Keyword(s):  
Point Defects ◽  
Surface Recombination ◽  
High Dose ◽  
Enhanced Diffusion ◽  
Projected Range ◽  
Diffusion Enhancement ◽  
Defect Microstructures ◽  
Dose Dependent ◽  
Higher Doses ◽  
Defect Microstructure

Abstract(001) CZ silicon wafers were implanted with arsenic (As+) at energies of 10–50keV to doses of 2×1014 to 5×1015/cm2. All implants were amorphizing in nature. The samples were annealed at 700°C for 16hrs. The resultant defect microstructures were analyzed by XTEM and PTEM and the As profiles were analyzed by SIMS. The As profiles showed significantly enhanced diffusion in all of the annealed specimens. The diffusion enhancement was both energy and dose dependent. The lowest dose implant/annealed samples did not show As clustering which translated to a lack of defects at the projected range. At higher doses, however, projected range defects were clearly observed, presumably due to interstitials generated during As clustering. The extent of enhancement in diffusion and its relation to the defect microstructure is explained by a combination of factors including surface recombination of point defects, As precipitation, As clustering and end of range damage.

Probing Semiconductor/Insulator Heterostructures Through Electron Spin Resonance of Point Defects: Interfaces, Interlayers, and Stress

2006 ◽  
Vol 984 ◽  
Author(s):  
A. Stesmans ◽  
K. Clémer ◽  
P. Somers ◽  
V. V. Afanas'ev
Keyword(s):  
Electron Spin Resonance ◽  
Integrated Circuits ◽  
Electron Spin ◽  
Point Defects ◽  
Atomic Scale ◽  
Interface Quality ◽  
Si Substrates ◽  
Spin Resonance ◽  
The Impact

AbstractElectron spin resonance (ESR) spectroscopy has become indispensable when it comes to the characterization on atomic-scale of structural, and correlated, electrical properties of actual semiconductor/insulator heterostructures. Through probing of paramagnetic point defects such as the Pb-type defects, E', and EX as a function of VUV irradiation and post deposition heat treatment, basic information as to the nature, quality, and thermal stability of the interface and interfacial regions can be established. This is illustrated by some specific examples of ESR analysis on contemporary Si/insulator structures promising for future developments in integrated circuits. First the impact of strain on the Si/SiO2 entity will be discussed. Through ESR analysis of thermally oxidized (111)Si substrates mechanically stressed in situ during oxidation, and tensile strained (100)sSi/SiO2 structures, it will be pointed out that in-plane tensile stress in Si can significantly improve the interface quality. Next, ESR results for stacks of (100)Si/SiOx/HfO2 and (100)Si/LaAlO3 are presented, revealing the potential to attain a high quality Si/SiO2 interface for the former and an abrupt, thermally stable interface for the latter.

scholarly journals KIMERA: A Kinetic Montecarlo Code for Mineral Dissolution

Minerals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 825
Author(s):  
Pablo Martin ◽  
Juan J. Gaitero ◽  
Jorge S. Dolado ◽  
Hegoi Manzano
Keyword(s):  
Monte Carlo ◽  
Dissolution Rate ◽  
Point Defects ◽  
Open Source Software ◽  
Kinetic Monte Carlo ◽  
Object Oriented ◽  
Mineral Dissolution ◽  
Atomic Scale ◽  
Mineral Structure ◽  
Scientific Tool

KIMERA is a scientific tool for the study of mineral dissolution. It implements a reversible Kinetic Monte Carlo (KMC) method to study the time evolution of a dissolving system, obtaining the dissolution rate and information about the atomic scale dissolution mechanisms. KIMERA allows to define the dissolution process in multiple ways, using a wide diversity of event types to mimic the dissolution reactions, and define the mineral structure in great detail, including topographic defects, dislocations, and point defects. Therefore, KIMERA ensures to perform numerous studies with great versatility. In addition, it offers a good performance thanks to its parallelization and efficient algorithms within the KMC method. In this manuscript, we present the code features and show some examples of its capabilities. KIMERA is controllable via user commands, it is written in object-oriented C++, and it is distributed as open-source software.

scholarly journals The Measurement of the Silicon Lattice Parameter and the Count of Atoms to Realise the Kilogram

MAPAN ◽  
2020 ◽  
Author(s):  
Enrico Massa ◽  
Carlo Paolo Sasso ◽  
Giovanni Mana
Keyword(s):  
International System ◽  
Lattice Parameter ◽  
Atomic Scale ◽  
X Rays ◽  
Planck Constant ◽  
Contrast Imaging ◽  
Silicon Lattice ◽  
System Of Units ◽  
History Of ◽  
Optical Wavelengths

AbstractX-ray interferometry established a link between atomic and macroscopic realisations of the metre. The possibility of measuring the silicon lattice parameter in terms of optical wavelengths opened the way to count atoms, to determine the Avogadro constant with unprecedented accuracy, and, nowadays, to realise the kilogram from the Planck constant. Also, it is a powerful tool in phase-contrast imaging by X-rays and, combined with optical interferometry, in linear and angular metrology with capabilities at the atomic scale. This review tells the history of the development of this fascinating technology at the Istituto Nazionale di Ricerca Metrologica in the last forty years. Eventually, it highlights its contribution to the redefinition of the International System of Units (SI).

Investigation of Fluorine Effect on the Boron Diffusion by Mean of Boron Redistribution in Shallow Delta-doped Layers

2004 ◽  
Vol 810 ◽  
Author(s):  
A. Halimaoui ◽  
J. M. Hartmann ◽  
C. Laviron ◽  
R. El-Farhane ◽  
F. Laugier
Keyword(s):  
Point Defects ◽  
Depth Profiling ◽  
Boron Diffusion ◽  
Enhanced Diffusion ◽  
Boron Doped ◽  
Transient Enhanced Diffusion ◽  
Sims Depth Profiling

ABSTRACTPreviously published articles have shown that co-implanted fluorine reduces transient enhanced diffusion of boron. However, it is not yet elucidated whether this effect is due to interaction of fluorine with point-defects or boron atoms. In this work, we have used boron redistribution in a shallow Delta-doped Si structures in order to get some insights into the role of fluorine in the boron diffusion. The structures consisted of 3 boron-doped layers separated by 40nm-thick undoped silicon. The samples were given to Ge preamorphization and F co-implant. SIMS depth profiling was used to analyse boron redistribution after annealing. The results we obtained strongly suggest that fluorine is not interacting with point-defects. The reduction in boron TED is most probably due to boron-fluorine interaction.

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