scholarly journals Uniform Monolayer of Organic Molecules Provides Precise Control of Semiconductor Device Properties

MRS Bulletin ◽  
2000 ◽  
Vol 25 (5) ◽  
pp. 4-4
Keyword(s):  
Organic Molecules ◽  
Semiconductor Device ◽  
Precise Control ◽  
Device Properties

Room-Temperature Ceramic Nanocoating Using Nanosheet Deposition Technique

2013 ◽  
Vol 2013 (CICMT) ◽  
pp. 000014-000018 ◽  
Author(s):  
M. Osada ◽  
T. Sasaki
Keyword(s):  
Room Temperature ◽  
Organic Molecules ◽  
Structural Diversity ◽  
Layer By Layer ◽  
Precise Control ◽  
Langmuir Blodgett ◽  
Wide Range ◽  
Potential Applications ◽  
Layer Assembly ◽  
Selection Of

We present a novel procedure for ceramic nanocoating using oxide nanosheet as a building block. A variety of oxide nanosheets (such as Ti1−δO2, MnO2 and perovsites) were synthesized by delaminating appropriate layered precursors into their molecular single sheets. These nanosheets are exceptionally rich in both structural diversity and electronic properties, with potential applications including conductors, semiconductors, insulators, and ferromagnets. Another attractive aspect is that nanosheets can be organized into various nanoarchitectures by applying solution-based synthetic techniques involving electrostatic layer-by-layer assembly and Langmuir-Blodgett deposition. It is even possible to tailor superlattice assemblies, incorporating into the nanosheet galleries with a wide range of materials such as organic molecules, polymers, and inorganic/metal nanoparticles. Sophisticated functionalities or paper-like devices can be designed through the selection of nanosheets and combining materials, and precise control over their arrangement at the molecular scale.

The influence of directed π–π interactions in solution on the thin film organic semiconductor device properties of small molecule polymer blends

Soft Matter ◽  
2011 ◽  
Vol 7 (15) ◽  
pp. 7065 ◽  
Author(s):  
Marie-Beatrice Madec ◽  
Sean Butterworth ◽  
Pablo Taboada ◽  
Richard Heenan ◽  
Mark Geoghegan ◽  
...  
Keyword(s):  
Thin Film ◽  
Polymer Blends ◽  
Small Molecule ◽  
Organic Semiconductor ◽  
Semiconductor Device ◽  
Π Interactions ◽  
Device Properties

scholarly journals Electrospray deposition of organic molecules on bulk insulator surfaces

2015 ◽  
Vol 6 ◽  
pp. 1927-1934 ◽  
Author(s):  
Antoine Hinaut ◽  
Rémy Pawlak ◽  
Ernst Meyer ◽  
Thilo Glatzel
Keyword(s):  
Molecular Electronics ◽  
Organic Molecules ◽  
Chemical Reactivity ◽  
High Vacuum ◽  
Molecular Structures ◽  
Ultra High Vacuum ◽  
Contact Mode ◽  
Insulating Surfaces ◽  
Hybrid Photovoltaics ◽  
Device Properties

Large organic molecules are of important interest for organic-based devices such as hybrid photovoltaics or molecular electronics. Knowing their adsorption geometries and electronic structures allows to design and predict macroscopic device properties. Fundamental investigations in ultra-high vacuum (UHV) are thus mandatory to analyze and engineer processes in this prospects. With increasing size, complexity or chemical reactivity, depositing molecules by thermal evaporation becomes challenging. A recent way to deposit molecules in clean conditions is Electrospray Ionization (ESI). ESI keeps the possibility to work with large molecules, to introduce them in vacuum, and to deposit them on a large variety of surfaces. Here, ESI has been successfully applied to deposit triply fused porphyrin molecules on an insulating KBr(001) surface in UHV environment. Different deposition coverages have been obtained and characterization of the surface by in-situ atomic force microscopy working in the non-contact mode shows details of the molecular structures adsorbed on the surface. We show that UHV-ESI, can be performed on insulating surfaces in the sub-monolayer regime and to single molecules which opens the possibility to study a variety of complex molecules.

Active Strain Engineering of Soft Plasmene Nanosheets by Thermoresponsive Hydrogels

2021 ◽  
Author(s):  
Runfang Fu ◽  
Siyuan Liu ◽  
Qianqian Shi ◽  
Yan Lu ◽  
Zijun Yong ◽  
...  
Keyword(s):  
Semiconductor Device ◽  
Strain Engineering ◽  
Atomic Level ◽  
Active Strain ◽  
Thermoresponsive Hydrogels ◽  
Device Properties

Epitaxy has been demonstrated to be a powerful technology to precisely engineer strains at the atomic level to modulate semiconductor device properties. However, it is not suitable for strain engineering...

scholarly journals Precise Layer Control of MoTe2 by Ozone Treatment

Nanomaterials ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 756 ◽  
Author(s):  
Qiyuan Wang ◽  
Jing Chen ◽  
Youwei Zhang ◽  
Laigui Hu ◽  
Ran Liu ◽  
...  
Keyword(s):  
Transition Metal Dichalcogenides ◽  
Atomic Scale ◽  
Ozone Treatment ◽  
Layer By Layer ◽  
Precise Control ◽  
Metal Dichalcogenides ◽  
Multiple Cycles ◽  
P Type ◽  
Device Properties ◽  
Layer Control

Transition metal dichalcogenides (TMDCs) demonstrate great potential in numerous applications. However, these applications require a precise control of layer thickness at the atomic scale. In this work, we present an in-situ study of the self-limiting oxidation process in MoTe2 by ozone (O3) treatment. A precise layer-by-layer control of MoTe2 flakes can be achieved via multiple cycles of oxidation and wet etching. The thinned MoTe2 flakes exhibit comparable optical properties and film quality to the pristine exfoliated ones. Besides, an additional p-type doping is observed after O3 oxidation. Such a p-doping effect converts the device properties of MoTe2 from electron-dominated to hole-dominated ambipolar characteristics.

scholarly journals Precise Control of Solid-State Nanopore Device Properties for Single-Molecule Detection Applications

2013 ◽  
Vol 104 (2) ◽  
pp. 520a
Author(s):  
Furat Sawafta ◽  
Bason Clancy ◽  
Martin Huber ◽  
Adam R. Hall
Keyword(s):  
Solid State ◽  
Single Molecule ◽  
Single Molecule Detection ◽  
Precise Control ◽  
Device Properties

High Resolution Replication of Organoclay Surfaces

1982 ◽  
Vol 40 ◽  
pp. 576-577
Author(s):  
W. W. Barker ◽  
W. E. Rigsby ◽  
V. J. Hurst ◽  
W. J. Humphreys
Keyword(s):  
Clay Mineral ◽  
Organic Molecule ◽  
Organic Molecules ◽  
X Ray Diffraction ◽  
Xrd Pattern ◽  
X Ray ◽  
Naturally Occurring ◽  
Silicate Layers ◽  
Mineral Identification

Experimental clay mineral-organic molecule complexes long have been known and some of them have been extensively studied by X-ray diffraction methods. The organic molecules are adsorbed onto the surfaces of the clay minerals, or intercalated between the silicate layers. Natural organo-clays also are widely recognized but generally have not been well characterized. Widely used techniques for clay mineral identification involve treatment of the sample with H2 O2 or other oxidant to destroy any associated organics. This generally simplifies and intensifies the XRD pattern of the clay residue, but helps little with the characterization of the original organoclay. Adequate techniques for the direct observation of synthetic and naturally occurring organoclays are yet to be developed.

A Novel Reconstitution Method for Inducing the Formation of Regular 2-Dimensional Arrays of Membrane Proteins and Lipids

1988 ◽  
Vol 46 ◽  
pp. 152-153 ◽  
Author(s):  
A. Engel ◽  
A. Holzenburg ◽  
K. Stauffer ◽  
J. Rosenbusch ◽  
U. Aebi
Keyword(s):  
Membrane Proteins ◽  
Flow Rate ◽  
Lipid Membranes ◽  
Functional Characterization ◽  
Dimensional Structure ◽  
Electron Crystallography ◽  
Peltier Element ◽  
Protein Ratio ◽  
Precise Control ◽  
3 Dimensional

Reconstitution of solubilized and purified membrane proteins in the presence of phospholipids into vesicles allows their functions to be studied by simple bulk measurements (e.g. diffusion of differently sized solutes) or by conductance measurements after transformation into planar membranes. On the other hand, reconstitution into regular protein-lipid arrays, usually forming at a specific lipid-to-protein ratio, provides the basis for determining the 3-dimensional structure of membrane proteins employing the tools of electron crystallography.To refine reconstitution conditions for reproducibly inducing formation of large and highly ordered protein-lipid membranes that are suitable for both electron crystallography and patch clamping experiments aimed at their functional characterization, we built a flow-dialysis device that allows precise control of temperature and flow-rate (Fig. 1). The flow rate is generated by a peristaltic pump and can be adjusted from 1 to 500 ml/h. The dialysis buffer is brought to a preselected temperature during its travel through a meandering path before it enters the dialysis reservoir. A Z-80 based computer controls a Peltier element allowing the temperature profile to be programmed as function of time.

Defects in β-SiC thin films grown on α-SiC substrates

1988 ◽  
Vol 46 ◽  
pp. 568-569
Author(s):  
Karren L. More
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Growth Interface ◽  
Si Substrates ◽  
Thermal Expansion Coefficients ◽  
Device Applications ◽  
Expansion Coefficients

Beta-SiC is an ideal candidate material for use in semiconductor device applications. Currently, monocrystalline β-SiC thin films are epitaxially grown on {100} Si substrates by chemical vapor deposition (CVD). These films, however, contain a high density of defects such as stacking faults, microtwins, and antiphase boundaries (APBs) as a result of the 20% lattice mismatch across the growth interface and an 8% difference in thermal expansion coefficients between Si and SiC. An ideal substrate material for the growth of β-SiC is α-SiC. Unfortunately, high purity, bulk α-SiC single crystals are very difficult to grow. The major source of SiC suitable for use as a substrate material is the random growth of {0001} 6H α-SiC crystals in an Acheson furnace used to make SiC grit for abrasive applications. To prepare clean, atomically smooth surfaces, the substrates are oxidized at 1473 K in flowing 02 for 1.5 h which removes ∽50 nm of the as-grown surface. The natural {0001} surface can terminate as either a Si (0001) layer or as a C (0001) layer.

Applications of SIMS to electronic materials and devices

1992 ◽  
Vol 50 (2) ◽  
pp. 1682-1683
Author(s):  
S.F. Corcoran
Keyword(s):  
Depth Distribution ◽  
Secondary Ion Mass Spectrometry ◽  
Semiconductor Device ◽  
Electronic Materials ◽  
Profile Analysis ◽  
Semiconductor Industry ◽  
Small Diameter ◽  
Depth Resolution ◽  
Detection Sensitivity

Over the past decade secondary ion mass spectrometry (SIMS) has played an increasingly important role in the characterization of electronic materials and devices. The ability of SIMS to provide part per million detection sensitivity for most elements while maintaining excellent depth resolution has made this technique indispensable in the semiconductor industry. Today SIMS is used extensively in the characterization of dopant profiles, thin film analysis, and trace analysis in bulk materials. The SIMS technique also lends itself to 2-D and 3-D imaging via either the use of stigmatic ion optics or small diameter primary beams.By far the most common application of SIMS is the determination of the depth distribution of dopants (B, As, P) intentionally introduced into semiconductor materials via ion implantation or epitaxial growth. Such measurements are critical since the dopant concentration and depth distribution can seriously affect the performance of a semiconductor device. In a typical depth profile analysis, keV ion sputtering is used to remove successive layers the sample.

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