The following article, originally published in Materials Research Society Proceedings Volume 482, is based on the address that Shuji Nakamura, recipient of an MRS Medal Award, presented during Symposium X of the 1997 MRS Fall Meeting. Nakamura was recognized for “the development of lattice-mismatched GaN based heteroepitaxy and its application to the creation of blue and green light-emitting diodes and short wave-length laser diodes.”
2011 Materials Research Society Fall Meeting highlights state-of-the-art materials research