Fluorescence loss of commercial aqueous quantum dots during preparation for bioimaging

2019 ◽  
Vol 9 (02) ◽  
pp. 702-709
Author(s):  
Kil Ho Lee ◽  
Thomas Porter ◽  
Jessica O. Winter

Abstract

Lab on a Chip ◽  
2016 ◽  
Vol 16 (2) ◽  
pp. 353-359 ◽  
Author(s):  
Qiushu Chen ◽  
Alper Kiraz ◽  
Xudong Fan

Optofluidic FRET lasers using aqueous quantum dots as donors.


2012 ◽  
Vol 27 (4) ◽  
pp. 639-652 ◽  
Author(s):  
Lihua Zhao ◽  
Zhang-Lin Zhou ◽  
Zengshan Guo ◽  
Gary Gibson ◽  
James A. Brug ◽  
...  

Abstract


2018 ◽  
Vol 8 (02) ◽  
pp. 398-403 ◽  
Author(s):  
Ncediwe Tsolekile ◽  
Vuyelwa Ncapayi ◽  
Sundararajan Parani ◽  
El Hadji Mamour Sakho ◽  
Mangaka C. Matoetoe ◽  
...  

Abstract


2019 ◽  
Vol 9 (3) ◽  
pp. 1079-1086 ◽  
Author(s):  
Hiroto Yanagawa ◽  
Asuka Inoue ◽  
Hiroshi Sugimoto ◽  
Masahiko Shioi ◽  
Minoru Fujii

Abstract


2019 ◽  
Vol 34 (24) ◽  
pp. 4037-4044 ◽  
Author(s):  
Oluwatobi S. Oluwafemi ◽  
Bambesiwe M.M. May ◽  
Sundararajan Parani ◽  
Jose Varghese Rajendran

Abstract


ACS Nano ◽  
2013 ◽  
Vol 7 (10) ◽  
pp. 9156-9167 ◽  
Author(s):  
Johannes Ostermann ◽  
Jan-Philip Merkl ◽  
Sandra Flessau ◽  
Christopher Wolter ◽  
Andreas Kornowksi ◽  
...  

2013 ◽  
Vol 1551 ◽  
pp. 3-9
Author(s):  
Fabrizio Arciprete ◽  
Ernesto Placidi ◽  
Rita Magri ◽  
Massimo Fanfoni ◽  
Adalberto Balzarotti ◽  
...  

ABSTRACTProgress in tailoring the size, shape and positioning of Quantum Dots on the substrate is crucial for their potential applications in new optoelectronic devices for nano-photonics as well as in quantum information and computation. Using Molecular Beam Epitaxy in pulsed deposition mode we demonstrate that the nucleation of InAs Quantum Dots can be selectively guided on the GaAs(001) surface by a suitable choice of the kinetic parameters for the growth of both the GaAs buffer layer and the InAs Quantum Dots. By developing a two-species rate-equation kinetic model we show that the positioning of the Quantum Dots on only one side of mounds of the GaAs buffer can be traced back to the very small As flux gradient between the two mound slopes $\left( {\Delta F_A /F_A \approx 1 - 5\% } \right)$ caused by the proper tilting of the incoming As flux. Such gradient originates, at the relatively high growth-temperature, a net cation flow from one slope of the mound to the other that is responsible for the selective growth.


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