scholarly journals Epitaxial growth of MgxCa1−xO on 4H–SiC(0001) and β-Ga2O3 wide band gap semiconductors with atomic layer deposition

2020 ◽  
Vol 35 (7) ◽  
pp. 831-839
Author(s):  
Xiabing Lou ◽  
Xian Gong ◽  
Sang Bok Kim ◽  
Roy G. Gordon
Keyword(s):  
Atomic Layer Deposition ◽  
Band Gap ◽  
Epitaxial Growth ◽  
Wide Band ◽  
Atomic Layer ◽  
Wide Band Gap ◽  
Layer Deposition ◽  
Wide Band Gap Semiconductors ◽  
Image Position

Abstract

scholarly journals Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering

Micromachines ◽  
2020 ◽  
Vol 11 (12) ◽  
pp. 1128
Author(s):  
Armin Barthel ◽  
Joseph Roberts ◽  
Mari Napari ◽  
Martin Frentrup ◽  
Tahmida Huq ◽  
...  
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Atomic Layer ◽  
Band Gap Energy ◽  
Wide Band Gap ◽  
Band Gap Engineering ◽  
Layer Deposition ◽  
Solar Blind ◽  
High Band

The suitability of Ti as a band gap modifier for α-Ga2O3 was investigated, taking advantage of the isostructural α phases and high band gap difference between Ti2O3 and Ga2O3. Films of (Ti,Ga)2O3 were synthesized by atomic layer deposition on sapphire substrates, and characterized to determine how crystallinity and band gap vary with composition for this alloy. We report the deposition of high quality α-(TixGa1−x)2O3 films with x = 3.7%. For greater compositions the crystalline quality of the films degrades rapidly, where the corundum phase is maintained in films up to x = 5.3%, and films containing greater Ti fractions being amorphous. Over the range of achieved corundum phase films, that is 0% ≤ x ≤ 5.3%, the band gap energy varies by ∼270 meV. The ability to maintain a crystalline phase at low fractions of Ti, accompanied by a modification in band gap, shows promising prospects for band gap engineering and the development of wavelength specific solar-blind photodetectors based on α-Ga2O3.

One-Dimensional TiO2@GaON Core-Shell Nanowires with Controlled Shell Thickness from Atomic Layer Deposition for Stable and Efficient Photoelectrochemical Water Splitting

2019 ◽  
Author(s):  
Jiajia Tao ◽  
Hong-Ping Ma ◽  
Kaiping Yuan ◽  
Yang Gu ◽  
Jianwei Lian ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Band Gap ◽  
Water Splitting ◽  
Atomic Layer ◽  
Photoelectrochemical Water Splitting ◽  
Core Shell ◽  
Photoelectrochemical Performance ◽  
Highly Efficient ◽  
Layer Deposition ◽  
Shell Nanowires

<div>As a promising oxygen evolution reaction semiconductor, TiO2 has been extensively investigated for solar photoelectrochemical water splitting. Here, a highly efficient and stable strategy for rationally preparing GaON cocatalysts on TiO2 by atomic layer deposition is demonstrated, which we show significantly enhances the</div><div>photoelectrochemical performance compared to TiO2-based photoanodes. For TiO2@20 nm-GaON core-shell nanowires a photocurrent density up to 1.10 mA cm-2 (1.23 V vs RHE) under AM 1.5 G irradiation (100 mW cm-2) has been achieved, which is 14 times higher than that of TiO2 NWs. Furthermore, the oxygen vacancy formation on GaON as well as the band gap matching with TiO2 not only provides more active sites for water oxidation but also enhances light absorption to promote interfacial charge separation and migration. Density functional theory studies of model systems of GaON-modified TiO2 confirm the band gap reduction, high reducibility and ability to activate water. The highly efficient and stable systems of TiO2@GaON core-shell nanowires provide a deeper understanding and universal strategy for enhancing photoelectrochemical performance of photoanodes now available. </div>

scholarly journals Surface Passivation of Organometal Halide Perovskite by Atomic Layer Deposition: a Mechanism Investigation Enabling Efficient Inverted Planar Solar Cells

2021 ◽  
Author(s):  
Ran Zhao ◽  
Kai Zhang ◽  
Jiahao Zhu ◽  
Shuang Xiao ◽  
Wei Xiong ◽  
...  
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
High Efficiency ◽  
Surface Passivation ◽  
Perovskite Solar Cells ◽  
Wide Band ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Halide Perovskite ◽  
Interface Passivation

Interface passivation is of the pivot to achieve high-efficiency organic metal halide perovskite solar cells (PSCs). Atomic layer deposition (ALD) of wide band gap oxides has recently shown great potential...

A pathway to p-type wide-band-gap semiconductors

2009 ◽  
Vol 95 (17) ◽  
pp. 172109 ◽  
Author(s):  
Anderson Janotti ◽  
Eric Snow ◽  
Chris G. Van de Walle
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors ◽  
P Type

scholarly journals Epitaxial Growth of MgxCa1–xO on GaN by Atomic Layer Deposition

Nano Letters ◽  
2016 ◽  
Vol 16 (12) ◽  
pp. 7650-7654 ◽  
Author(s):  
Xiabing Lou ◽  
Hong Zhou ◽  
Sang Bok Kim ◽  
Sami Alghamdi ◽  
Xian Gong ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Epitaxial Growth ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Solid solubility of rare earth elements (Nd, Eu, Tb) in In2−xSnxO3 – effect on electrical conductivity and optical properties

2014 ◽  
Vol 43 (25) ◽  
pp. 9620-9632 ◽  
Author(s):  
T. O. L. Sunde ◽  
M. Lindgren ◽  
T. O. Mason ◽  
M.-A. Einarsrud ◽  
T. Grande
Keyword(s):  
Electrical Conductivity ◽  
Optical Properties ◽  
Rare Earth ◽  
Rare Earth Elements ◽  
Band Gap ◽  
Solid Solubility ◽  
Wide Band ◽  
Wide Band Gap ◽  
Recent Interest ◽  
Wide Band Gap Semiconductors

Wide band-gap semiconductors doped with luminescent rare earth elements (REEs) have attracted recent interest due to their unique optical properties.

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