scholarly journals Multimodal visualization of the optomechanical response of silicon cantilevers with ultrafast electron microscopy

2016 ◽  
Vol 32 (1) ◽  
pp. 239-247 ◽  
Author(s):  
David J. Flannigan ◽  
Daniel R. Cremons ◽  
David T. Valley
Keyword(s):  
Electron Microscopy ◽  
Image Position ◽  
Multimodal Visualization

Abstract

Atomic resolution Z-contrast imaging of bulk crystal surfaces in Scanning Reflection Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 414-415
Author(s):  
Z. L. Wang ◽  
J. Bentley
Keyword(s):  
Electron Microscopy ◽  
Elastic Scattering ◽  
Dark Field ◽  
Contrast Imaging ◽  
Crystal Lattices ◽  
Small Probe ◽  
Scanning Transmission ◽  
Annular Dark Field ◽  
Image Position ◽  
Z Contrast

The success of obtaining atomic-number-sensitive (Z-contrast) images in scanning transmission electron microscopy (STEM) has shown the feasibility of imaging composition changes at the atomic level. This type of image is formed by collecting the electrons scattered through large angles when a small probe scans across the specimen. The image contrast is determined by two scattering processes. One is the high angle elastic scattering from the nuclear sites,where ϕNe is the electron probe function centered at bp = (Xp, yp) after penetrating through the crystal; F denotes a Fourier transform operation; D is the detection function of the annular-dark-field (ADF) detector in reciprocal space u. The other process is thermal diffuse scattering (TDS), which is more important than the elastic contribution for specimens thicker than about 10 nm, and thus dominates the Z-contrast image. The TDS is an average “elastic” scattering of the electrons from crystal lattices of different thermal vibrational configurations,

From atoms to grains: Transmission electron microscopy of graphene

MRS Bulletin ◽  
2012 ◽  
Vol 37 (12) ◽  
pp. 1214-1221 ◽  
Author(s):  
Pinshane Y. Huang ◽  
Jannik C. Meyer ◽  
David A. Muller
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Transmission Electron ◽  
Image Position

Abstract

Electron-beam-driven chemical processes during liquid phase transmission electron microscopy

MRS Bulletin ◽  
2020 ◽  
Vol 45 (9) ◽  
pp. 746-753
Author(s):  
Taylor J. Woehl ◽  
Trevor Moser ◽  
James E. Evans ◽  
Frances M. Ross
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Beam ◽  
Liquid Phase ◽  
Chemical Processes ◽  
Transmission Electron ◽  
Phase Transmission ◽  
Image Position

Abstract

Liquid phase electron microscopy of biological specimens

MRS Bulletin ◽  
2020 ◽  
Vol 45 (9) ◽  
pp. 754-760
Author(s):  
Diana B. Peckys ◽  
Elena Macías-Sánchez ◽  
Niels de Jonge
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Image Position

Abstract

scholarly journals Liquid phase transmission electron microscopy for imaging of nanoscale processes in solution

MRS Bulletin ◽  
2020 ◽  
Vol 45 (9) ◽  
pp. 704-712
Author(s):  
Utkur Mirsaidov ◽  
Joseph P. Patterson ◽  
Haimei Zheng
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Liquid Phase ◽  
Transmission Electron ◽  
Phase Transmission ◽  
Image Position

Abstract

scholarly journals Simple Methods to Correlate Light and Scanning Electron Microscopy

2020 ◽  
Vol 28 (4) ◽  
pp. 24-29
Author(s):  
Claudia S. López ◽  
Erin Stempinski ◽  
Jessica L. Riesterer
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Image Position ◽  
Scanning Electron

Abstract:

scholarly journals Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer

1999 ◽  
Vol 4 (1) ◽  
Author(s):  
H. Marchand ◽  
N. Zhang ◽  
L. Zhao ◽  
Y. Golan ◽  
S.J. Rosner ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Buffer Layer ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Seed Region ◽  
Threading Dislocations ◽  
Transmission Electron ◽  
Aln Buffer ◽  
Image Position ◽  
Cathodoluminescence Imaging

Lateral epitaxial overgrowth (LEO) on Si(111) substrates using an AlN buffer layer is demonstrated and characterized using scanning electron microscopy, atomic force microscopy, transmission electron microscopy, x-ray diffraction, photoluminescence spectroscopy, and cathodoluminescence imaging. The <100>-oriented LEO GaN stripes grown on silicon substrates are shown to have similar structural properties as LEO GaN grown on GaN/Al2O3 substrates: the surface topography is characterized by continuous crystallographic steps rather than by steps terminated by screw-component threading dislocations; the density of threading dislocations is <106 cm−2; the LEO regions exhibit crystallographic tilt (0.7-4.7°) relative to the seed region. The AlN buffer thickness affects the stripe morphology and, in turn, the microstructure of the LEO GaN. The issues of chemical compability and thermal expansion mismatch are discussed.

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